H. Wenzel, M. Braun, J. Fricke, A. Klehr, A. Knauer, P. Ressel, G. Erbert, G. Trankle
{"title":"860nm高功率分布式反馈激光器的设计与实现","authors":"H. Wenzel, M. Braun, J. Fricke, A. Klehr, A. Knauer, P. Ressel, G. Erbert, G. Trankle","doi":"10.1109/ISLC.2002.1041170","DOIUrl":null,"url":null,"abstract":"Summary form only given. AlGaAs/InGaAsP ridge-waveguide distributed-feedback lasers emitting at 860 nm a continuous-wave output power of more than 400 mW at 25/spl deg/C are reported.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"197 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Design and realization of high-power distributed-feedback lasers emitting at 860 nm\",\"authors\":\"H. Wenzel, M. Braun, J. Fricke, A. Klehr, A. Knauer, P. Ressel, G. Erbert, G. Trankle\",\"doi\":\"10.1109/ISLC.2002.1041170\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Summary form only given. AlGaAs/InGaAsP ridge-waveguide distributed-feedback lasers emitting at 860 nm a continuous-wave output power of more than 400 mW at 25/spl deg/C are reported.\",\"PeriodicalId\":179103,\"journal\":{\"name\":\"IEEE 18th International Semiconductor Laser Conference\",\"volume\":\"197 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE 18th International Semiconductor Laser Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISLC.2002.1041170\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE 18th International Semiconductor Laser Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.2002.1041170","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Design and realization of high-power distributed-feedback lasers emitting at 860 nm
Summary form only given. AlGaAs/InGaAsP ridge-waveguide distributed-feedback lasers emitting at 860 nm a continuous-wave output power of more than 400 mW at 25/spl deg/C are reported.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
