732 nm和975 nm高亮度锥形激光器:实验和数值分析

IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI:10.1109/ISLC.2002.1041132

L. Borruel, S. Sujecki, S. Auzanneau, B. Sumpf, P. Moreno, J. Wykes, M. Krakowski, G. Erbert, D. Rodríguez, P. Sewell, M. Calligaro, H. Wenzel, T. Benson, E. Larkins, I. Esquivias

{"title":"732 nm和975 nm高亮度锥形激光器:实验和数值分析","authors":"L. Borruel, S. Sujecki, S. Auzanneau, B. Sumpf, P. Moreno, J. Wykes, M. Krakowski, G. Erbert, D. Rodríguez, P. Sewell, M. Calligaro, H. Wenzel, T. Benson, E. Larkins, I. Esquivias","doi":"10.1109/ISLC.2002.1041132","DOIUrl":null,"url":null,"abstract":"The 732 nm laser structure consists of a tensile strained GaAsP QW with AlGaAs confinement and cladding regions. The 975 nm structure comprises a strained InGaAs QW embedded in an Al-free optical cavity Both designs employ a large optical cavity to reduce the fast axis divergence and to decrease the tendency to filamentation, with similar values for the vertical confinement factor.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"407 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"High brightness tapered lasers at 732 nm and 975 nm: experiments and numerical analysis\",\"authors\":\"L. Borruel, S. Sujecki, S. Auzanneau, B. Sumpf, P. Moreno, J. Wykes, M. Krakowski, G. Erbert, D. Rodríguez, P. Sewell, M. Calligaro, H. Wenzel, T. Benson, E. Larkins, I. Esquivias\",\"doi\":\"10.1109/ISLC.2002.1041132\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The 732 nm laser structure consists of a tensile strained GaAsP QW with AlGaAs confinement and cladding regions. The 975 nm structure comprises a strained InGaAs QW embedded in an Al-free optical cavity Both designs employ a large optical cavity to reduce the fast axis divergence and to decrease the tendency to filamentation, with similar values for the vertical confinement factor.\",\"PeriodicalId\":179103,\"journal\":{\"name\":\"IEEE 18th International Semiconductor Laser Conference\",\"volume\":\"407 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE 18th International Semiconductor Laser Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISLC.2002.1041132\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE 18th International Semiconductor Laser Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.2002.1041132","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 6

摘要

732 nm激光结构由AlGaAs约束和包层区域的拉伸应变GaAsP QW组成。975 nm结构包括嵌入无al光腔的应变InGaAs QW，两种设计都采用大的光腔来减少快速轴发散和减少成丝的趋势，垂直限制因子的值相似。

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High brightness tapered lasers at 732 nm and 975 nm: experiments and numerical analysis

The 732 nm laser structure consists of a tensile strained GaAsP QW with AlGaAs confinement and cladding regions. The 975 nm structure comprises a strained InGaAs QW embedded in an Al-free optical cavity Both designs employ a large optical cavity to reduce the fast axis divergence and to decrease the tendency to filamentation, with similar values for the vertical confinement factor.

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IEEE 18th International Semiconductor Laser Conference

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