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IEEE 18th International Semiconductor Laser Conference最新文献

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High-performance vertical-cavity surface-emitting lasers with emission wavelengths from 650 nm to 670 nm 发射波长650 ~ 670 nm的高性能垂直腔面发射激光器
IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI: 10.1109/ISLC.2002.1041092
A. Knigge, M. Zorn, H. Unold, F. Mederer, M. Weyers, G. Trankle
{"title":"High-performance vertical-cavity surface-emitting lasers with emission wavelengths from 650 nm to 670 nm","authors":"A. Knigge, M. Zorn, H. Unold, F. Mederer, M. Weyers, G. Trankle","doi":"10.1109/ISLC.2002.1041092","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041092","url":null,"abstract":"Record output power and temperature stability of MOVPE grown GaInP MQW oxide-confined VCSELs with 650 nm to 670 nm wavelength are presented including good high frequency behaviour.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133794116","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
High-power, high-efficiency 660-nm laser diodes for DVD-R/RW 用于DVD-R/RW的高功率、高效率660纳米激光二极管
IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI: 10.1109/ISLC.2002.1041151
T. Yagi, H. Nishiguchi, Y. Yoshida, M. Miyashita, M. Sasaki, Y. Sakamoto, K. Ono, Y. Mitsui
{"title":"High-power, high-efficiency 660-nm laser diodes for DVD-R/RW","authors":"T. Yagi, H. Nishiguchi, Y. Yoshida, M. Miyashita, M. Sasaki, Y. Sakamoto, K. Ono, Y. Mitsui","doi":"10.1109/ISLC.2002.1041151","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041151","url":null,"abstract":"The high-power operation of the lateral modes stabilized 660 nm AlGaInP laser diode (LD) with the real-refractive-index waveguide structure has been achieved. The stable lateral mode operation up to 143 mW at 70/spl deg/C is realized. This is the highest power record among the narrow stripe 660-nm LDs. This LD Is suitable for the next generation high-speed (8x-) DVD-R/RW drives necessitating 140 mW class LD.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130449650","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
Design, fabrication and characterization of high-power angled-grating distributed-feedback lasers 高功率角光栅分布反馈激光器的设计、制造与特性研究
IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI: 10.1109/ISLC.2002.1041101
K. Paschke, R. Guther, J. Fricke, J. Sebastian, A. Knauer, H. Wenzel, G. Erbert, G. Trankle, A. Bogatov, A. Drakin, A. A. Stratonnikov
{"title":"Design, fabrication and characterization of high-power angled-grating distributed-feedback lasers","authors":"K. Paschke, R. Guther, J. Fricke, J. Sebastian, A. Knauer, H. Wenzel, G. Erbert, G. Trankle, A. Bogatov, A. Drakin, A. A. Stratonnikov","doi":"10.1109/ISLC.2002.1041101","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041101","url":null,"abstract":"InGaAs SQW /spl alpha/-DFB waveguide lasers emitting around 1060nm with a beam propagation factor of M/sup 2//spl les/ 1.3 up to 13W output power (M/sup 2/ =3.2 @ P=2.1 W) have been fabricated and characterized.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"114 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132859454","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Ultra-high power RWG laser diodes with lateral absorber region 具有侧向吸收区的超高功率RWG激光二极管
IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI: 10.1109/ISLC.2002.1041167
S. Pawlik, S. Traut, A. Thies, B. Sverdlov, B. Schmidt
{"title":"Ultra-high power RWG laser diodes with lateral absorber region","authors":"S. Pawlik, S. Traut, A. Thies, B. Sverdlov, B. Schmidt","doi":"10.1109/ISLC.2002.1041167","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041167","url":null,"abstract":"We have developed a ridge waveguide (RWG) design allowing the realization of laser diodes with maximum kink-free light output power of up to 900 mW. The design idea is focusing on the introduction of additional optical losses for higher order modes, whereas the zero order modes experiences only minor influences.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130531013","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Micromechanically tunable air gap resonators for long wavelength VCSEL's 用于长波VCSEL的微机械可调谐气隙谐振器
IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI: 10.1109/ISLC.2002.1041095
F. Romer, C. Prott, J. Daleiden, S. Irmer, M. Strassner, A. Tarraf, H. Hillmer
{"title":"Micromechanically tunable air gap resonators for long wavelength VCSEL's","authors":"F. Romer, C. Prott, J. Daleiden, S. Irmer, M. Strassner, A. Tarraf, H. Hillmer","doi":"10.1109/ISLC.2002.1041095","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041095","url":null,"abstract":"An air gap cavity concept for obtaining widely tunable VCSEL's is presented. The Bragg mirrors forming the resonator are based on semiconductor/air layers or dielectric materials.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123323910","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
All-active tapered 1550 nm InGaAsP-BH-FP lasers for uncooled 10 Gb/s operation 全有源锥形1550 nm InGaAsP-BH-FP激光器，非冷却10gb /s操作
IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI: 10.1109/ISLC.2002.1041136
M. Mohrle, A. Sigmund, L. Morl, H. Roehle, A. Suna, G. Jacumeit, C. Bornholdt, F. Reier
{"title":"All-active tapered 1550 nm InGaAsP-BH-FP lasers for uncooled 10 Gb/s operation","authors":"M. Mohrle, A. Sigmund, L. Morl, H. Roehle, A. Suna, G. Jacumeit, C. Bornholdt, F. Reier","doi":"10.1109/ISLC.2002.1041136","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041136","url":null,"abstract":"In summary, all-active tapered 10Gb/s-1550nm InGaAsP QW BH-FP lasers have been developed. 400 /spl mu/m long as-cleaved devices show low threshold current, high output power and uncooled 10 Gb/s operation up to at least 70 C.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"101 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124795908","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Spatio-temporal turn-on dynamics of VCSELs vcsel的时空开启动力学
IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI: 10.1109/ISLC.2002.1041135
A. Barchanski, T. Gensty, L. Fischer, W. Elsasser, C. Degen
{"title":"Spatio-temporal turn-on dynamics of VCSELs","authors":"A. Barchanski, T. Gensty, L. Fischer, W. Elsasser, C. Degen","doi":"10.1109/ISLC.2002.1041135","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041135","url":null,"abstract":"We present 2D-spatially and picosecond-resolved measurements of VCSEL emission, unveiling their rich dynamics, manifesting itself in temporal changes of the modal, polarization and spatial characteristics.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123879735","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigation of the optical losses in photonic crystal laser cavities by varying the number of lattice periods 改变晶格周期数对光子晶体激光腔中光学损耗的研究
IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI: 10.1109/ISLC.2002.1041163
Po-Tsung Lee, J.R. Cao, S. Choi, Tian Yang, J. O'Brien, P. Dapkus
{"title":"Investigation of the optical losses in photonic crystal laser cavities by varying the number of lattice periods","authors":"Po-Tsung Lee, J.R. Cao, S. Choi, Tian Yang, J. O'Brien, P. Dapkus","doi":"10.1109/ISLC.2002.1041163","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041163","url":null,"abstract":"We focus on InGaAsP MQW photonic crystal lasers and an experimental determination of the optical loss in these resonant cavities. We form optical microcavities by removing air holes from the photonic crystal lattice in a thin dielectric slab. The three-dimensional confinement of light is achieved through total internal reflection at the semiconductor/air interface and by the photonic bandgap introduced by the two-dimensional photonic crystal lattice. In this paper we report the results of experiments in which the number of periods of the photonic crystal lattice is varied across an array of lasers. This allows us to determine the optical losses and cavity quality factors in these cavities as a function of the number of lattice periods.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122267314","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
1.3 /spl mu/m laterally gain coupled tunable distributed feedback lasers based on GaInNAs 基于GaInNAs的1.3 /spl mu/m横向增益耦合可调谐分布反馈激光器
IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI: 10.1109/ISLC.2002.1041113
M. Muller, D. Gollub, M. Fischer, M. Kamp, A. Forchel
{"title":"1.3 /spl mu/m laterally gain coupled tunable distributed feedback lasers based on GaInNAs","authors":"M. Muller, D. Gollub, M. Fischer, M. Kamp, A. Forchel","doi":"10.1109/ISLC.2002.1041113","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041113","url":null,"abstract":"We have investigated tunable distributed feedback lasers based on GaInNAs/GaAs. We demonstrated continuously tunable devices with side mode suppression ratios of about 35 dB.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"769 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132589852","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High frequency operation of 1.57 /spl mu/m laterally gain coupled DFB lasers with self aligned ohmic contacts and nickel surface gratings 具有自对准欧姆接触和镍面光栅的1.57 /spl mu/m横向增益耦合DFB激光器的高频工作
IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI: 10.1109/ISLC.2002.1041099
R. Schreiner, H. Schweizer
{"title":"High frequency operation of 1.57 /spl mu/m laterally gain coupled DFB lasers with self aligned ohmic contacts and nickel surface gratings","authors":"R. Schreiner, H. Schweizer","doi":"10.1109/ISLC.2002.1041099","DOIUrl":"https://doi.org/10.1109/ISLC.2002.1041099","url":null,"abstract":"Laterally coupled DFB lasers with self-aligned ohmic contacts show the advantage of a, considerably simplified fabrication process. Side-mode-suppresion-ratios up to 55 dB and 3 dB-bandwidths beyond 15 GHz were obtained for these devices.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132055310","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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