A. Knigge, M. Zorn, H. Unold, F. Mederer, M. Weyers, G. Trankle
{"title":"发射波长650 ~ 670 nm的高性能垂直腔面发射激光器","authors":"A. Knigge, M. Zorn, H. Unold, F. Mederer, M. Weyers, G. Trankle","doi":"10.1109/ISLC.2002.1041092","DOIUrl":null,"url":null,"abstract":"Record output power and temperature stability of MOVPE grown GaInP MQW oxide-confined VCSELs with 650 nm to 670 nm wavelength are presented including good high frequency behaviour.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"High-performance vertical-cavity surface-emitting lasers with emission wavelengths from 650 nm to 670 nm\",\"authors\":\"A. Knigge, M. Zorn, H. Unold, F. Mederer, M. Weyers, G. Trankle\",\"doi\":\"10.1109/ISLC.2002.1041092\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Record output power and temperature stability of MOVPE grown GaInP MQW oxide-confined VCSELs with 650 nm to 670 nm wavelength are presented including good high frequency behaviour.\",\"PeriodicalId\":179103,\"journal\":{\"name\":\"IEEE 18th International Semiconductor Laser Conference\",\"volume\":\"31 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE 18th International Semiconductor Laser Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISLC.2002.1041092\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE 18th International Semiconductor Laser Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.2002.1041092","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High-performance vertical-cavity surface-emitting lasers with emission wavelengths from 650 nm to 670 nm
Record output power and temperature stability of MOVPE grown GaInP MQW oxide-confined VCSELs with 650 nm to 670 nm wavelength are presented including good high frequency behaviour.