High brightness tapered lasers at 732 nm and 975 nm: experiments and numerical analysis

Abstract

The 732 nm laser structure consists of a tensile strained GaAsP QW with AlGaAs confinement and cladding regions. The 975 nm structure comprises a strained InGaAs QW embedded in an Al-free optical cavity Both designs employ a large optical cavity to reduce the fast axis divergence and to decrease the tendency to filamentation, with similar values for the vertical confinement factor.