MOVPE-grown 1.3 /spl mu/m emitting VCSEL with GaInNAs active region

IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI:10.1109/ISLC.2002.1041153

A. Ramakrishnan, G. Steinle, D. Supper, J. Pfeiffer, C. Degen, W. Stolz

引用次数: 1

Abstract

An MOVPE-grown VCSEL on GaAs substrate with a GaInNAs active region emitting at 1.3 /spl mu/m with record laser-characteristics and data-transmission rate of 10 Gbit/s has been realized.

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movpe生长1.3 /spl mu/m，发射具有GaInNAs活性区的VCSEL

在GaAs衬底上实现了具有1.3 /spl mu/m发射速率的GaInNAs有源区域的movpe生长VCSEL，具有创纪录的激光特性和10 Gbit/s的数据传输速率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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IEEE 18th International Semiconductor Laser Conference

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