InGaAsP、AlGaInAs和GaInNAs量子阱激光器在1.3 /spl mu/m下的热稳定性比较

IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI:10.1109/ISLC.2002.1041109

S. Sweeney, S. R. Jin, R. Fehse, A. Adams, T. Higashi, H. Riechert, P.J.A. Tbijs

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引用次数: 5

摘要

我们给出了基于InGaAsP、AlGaInAs和gainnas的QW激光器的测量温度依赖性，并根据主要的重组路径讨论了J/sub - th/和T/sub - o/。

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A comparison of the thermal stability of InGaAsP, AlGaInAs and GaInNAs quantum-well lasers for 1.3 /spl mu/m operation

We present the measured temperature dependence of InGaAsP, AlGaInAs, and GaInNAs-based QW lasers and discuss J/sub th/ and T/sub o/ in terms of the dominant recombination paths.

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IEEE 18th International Semiconductor Laser Conference

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