{"title":"具有相同mqw双堆叠有源层的集成1.3/spl mu/m DFB激光电吸收调制器的15GHz小信号调制性能","authors":"B. Stegmueller, C. Hanke","doi":"10.1109/ISLC.2002.1041118","DOIUrl":null,"url":null,"abstract":"A 15GHz small signal modulation bandwidth has been measured for the first time for a monolithically integrated 1.31/spl mu/m electro-absorption modulator DFB laser diode using an identical active multiple quantum well (MQW)-layer structure composed of two different QW types.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"59 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"15GHz small-signal modulation performance of an integrated 1.3/spl mu/m DFB laser electro-absorption modulator with an identical MQW-double stack active layer\",\"authors\":\"B. Stegmueller, C. Hanke\",\"doi\":\"10.1109/ISLC.2002.1041118\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 15GHz small signal modulation bandwidth has been measured for the first time for a monolithically integrated 1.31/spl mu/m electro-absorption modulator DFB laser diode using an identical active multiple quantum well (MQW)-layer structure composed of two different QW types.\",\"PeriodicalId\":179103,\"journal\":{\"name\":\"IEEE 18th International Semiconductor Laser Conference\",\"volume\":\"59 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE 18th International Semiconductor Laser Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISLC.2002.1041118\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE 18th International Semiconductor Laser Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.2002.1041118","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
15GHz small-signal modulation performance of an integrated 1.3/spl mu/m DFB laser electro-absorption modulator with an identical MQW-double stack active layer
A 15GHz small signal modulation bandwidth has been measured for the first time for a monolithically integrated 1.31/spl mu/m electro-absorption modulator DFB laser diode using an identical active multiple quantum well (MQW)-layer structure composed of two different QW types.
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