Journal of Luminescence最新文献

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Fundamental processes and recent development of organic scintillators
IF 3.3 3区 物理与天体物理
Journal of Luminescence Pub Date : 2024-11-30 DOI: 10.1016/j.jlumin.2024.121008
M. Koshimizu
{"title":"Fundamental processes and recent development of organic scintillators","authors":"M. Koshimizu","doi":"10.1016/j.jlumin.2024.121008","DOIUrl":"10.1016/j.jlumin.2024.121008","url":null,"abstract":"<div><div>Overview of organic scintillators is provided with an emphasis on the fundamental processes of ionization, recombination, and excitation energy transfer. Upon recombination, both singlet and triplet excited states are formed in organic scintillators. Their contribution to scintillation is discussed in detail. From a viewpoint of material development, use of novel polymers, fluorescent molecules, and fabrication techniques is overviewed. In addition to the conventional forms of crystalline, liquid, and plastic scintillators, recent development of organic glass scintillators is introduced. In addition, material design to enhance energy transfer efficiency and to effectively use triplet excited states is discussed. Finally, prospects on the use unexplored excited states by monitoring the dynamics of ionization and excitation are provided.</div></div>","PeriodicalId":16159,"journal":{"name":"Journal of Luminescence","volume":"278 ","pages":"Article 121008"},"PeriodicalIF":3.3,"publicationDate":"2024-11-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142758826","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Bright tunable multicolor carbon dots for white light-emitting diodes and fingerprint detection
IF 3.3 3区 物理与天体物理
Journal of Luminescence Pub Date : 2024-11-28 DOI: 10.1016/j.jlumin.2024.121007
Yi Zhu , JiQiu Yang , Wei Shi , Jianxin Xie , Bingshan Zhou , Jiuguang Wang , Shihao Zheng , Shuguang Li , Wenjing Chen
{"title":"Bright tunable multicolor carbon dots for white light-emitting diodes and fingerprint detection","authors":"Yi Zhu ,&nbsp;JiQiu Yang ,&nbsp;Wei Shi ,&nbsp;Jianxin Xie ,&nbsp;Bingshan Zhou ,&nbsp;Jiuguang Wang ,&nbsp;Shihao Zheng ,&nbsp;Shuguang Li ,&nbsp;Wenjing Chen","doi":"10.1016/j.jlumin.2024.121007","DOIUrl":"10.1016/j.jlumin.2024.121007","url":null,"abstract":"<div><div>In this study, in order to achieve high quantum yield (QY) and tunable multicolor carbon dots, the influence of quantum size effects and surface state changes were considered comprehensively. Blue-emitting seed carbon dots (S-CDs) were synthesized using 1,2,4-benzenetricarboxylic acid and urea as precursors. Green-emitting carbon dots (G-CDs) were then prepared by oxidizing S-CDs with 3 % H<sub>2</sub>O<sub>2</sub>, followed by treatment with 0.1 M NaOH to produce strong blue-emitting carbon dots (B-CDs). Compared with S-CDs, the QY of G-CDs and B-CDs increased by 35 times and 75 times, respectively. The improvement in quantum yield (QY) and the adjustment in emission wavelength were attributed to the disruption of hydrogen bonds and modifications in surface groups caused by treatments with hydrogen peroxide and sodium hydroxide. By combining B-CDs and G-CDs with commercial red phosphors, warm W-LEDs with a color rendering index as high as 91.4 and a correlated color temperature of 5437 K was successfully prepared, which was suitable for indoor lighting. In addition, B-CDs and G-CDs were used as fluorescent markers for latent fingerprints identification on different substrates, the results showed that B-CDs and G-CDs significantly enhanced the resolution of fingerprint imaging. The synthesized G-CDs and B-CDs offer several advantages, including high quantum yield, excellent photostability, low cost and a straightforward synthesis method. These properties provide a solid material foundation for enhancing the performance of white LEDs and detecting latent fingerprints.</div></div>","PeriodicalId":16159,"journal":{"name":"Journal of Luminescence","volume":"278 ","pages":"Article 121007"},"PeriodicalIF":3.3,"publicationDate":"2024-11-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142757642","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Improving performance of CdSe/ZnS QDs via enhancing förster resonance energy transfer and suppressing auger recombination
IF 3.3 3区 物理与天体物理
Journal of Luminescence Pub Date : 2024-11-28 DOI: 10.1016/j.jlumin.2024.121004
Bo Li , Jilong Tang , Yangdi Wang , Qi Li , Cong Zhang , Chenlu Zhang , Ying Shi , Zhipeng Wei
{"title":"Improving performance of CdSe/ZnS QDs via enhancing förster resonance energy transfer and suppressing auger recombination","authors":"Bo Li ,&nbsp;Jilong Tang ,&nbsp;Yangdi Wang ,&nbsp;Qi Li ,&nbsp;Cong Zhang ,&nbsp;Chenlu Zhang ,&nbsp;Ying Shi ,&nbsp;Zhipeng Wei","doi":"10.1016/j.jlumin.2024.121004","DOIUrl":"10.1016/j.jlumin.2024.121004","url":null,"abstract":"<div><div>In quantum dots (QDs) systems, Förster resonance energy transfer (FRET) and Auger recombination (AR) processes are crucial mechanisms that significantly impact their photoluminescence (PL) performance. Developing a strategy to simultaneously enhance FRET process and suppress the AR process is crucial. In this study, we reported that FRET process was enhanced, and the AR process was suppressed in the carbon-CdSe/ZnS QDs system via increasing carbon QDs donor ratios. The enhanced FRET rate is assigned to the increased adsorbed numbers and shortened donor-acceptor distance. The reduced AR rate is assigned to the decoration of the surface for CdSe/ZnS QDs acceptor in increased adsorbed numbers. As a result, the PL intensity of CdSe/ZnS QDs acceptor increased by over 3-fold. Our findings will stimulate the development of highly defined cascaded energy-transfer structures, aiming to achieve high-performance light-emitting devices.</div></div>","PeriodicalId":16159,"journal":{"name":"Journal of Luminescence","volume":"278 ","pages":"Article 121004"},"PeriodicalIF":3.3,"publicationDate":"2024-11-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142748450","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Luminescent and scintillating properties of Tb3+-doped fluoroxide glasses
IF 3.3 3区 物理与天体物理
Journal of Luminescence Pub Date : 2024-11-28 DOI: 10.1016/j.jlumin.2024.121006
Lai Wei , Lianjie Li , Yueyue Wu , Hai Guo
{"title":"Luminescent and scintillating properties of Tb3+-doped fluoroxide glasses","authors":"Lai Wei ,&nbsp;Lianjie Li ,&nbsp;Yueyue Wu ,&nbsp;Hai Guo","doi":"10.1016/j.jlumin.2024.121006","DOIUrl":"10.1016/j.jlumin.2024.121006","url":null,"abstract":"<div><div>Scintillator can convert ionizing radiation of high-energy ray or particle into ultraviolet/visible light, which is extensively employed for baggage screening and non-destructive testing applications. In this paper, transparent Tb<sup>3+</sup>-doped fluoroxide glass scintillators were fabricated successfully by melting quenching technique. Tb<sup>3+</sup>-doped fluoroxide glass possesses commendable luminescent properties. The optimal sample (SACNY-3Tb) has a high transmittance (87.6%@542 nm) and a suitable lifetime (2.24 ms). In addition, SACNY-3Tb has good scintillating properties. The X-ray excited luminescent intensity of SACNY-3Tb is 130% of that of Bi<sub>4</sub>Ge<sub>3</sub>O<sub>12</sub>, and 18 lp/mm of imaging resolution for X-ray can be obtained. In conclusion, the Tb<sup>3+</sup>-doped fluoroxide glass scintillator possesses potential for use within the application of steady-state X-ray detection.</div></div>","PeriodicalId":16159,"journal":{"name":"Journal of Luminescence","volume":"278 ","pages":"Article 121006"},"PeriodicalIF":3.3,"publicationDate":"2024-11-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142758813","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Novel Hg2+‐Specific “turn-on” fluorescence sensor: Applications in water samples and test strips via real‐time colorimetric assay
IF 3.3 3区 物理与天体物理
Journal of Luminescence Pub Date : 2024-11-27 DOI: 10.1016/j.jlumin.2024.121003
Nirawit Kaewnok, Pimpisa Tabphan, Jitnapa Sirirak, Krit Setthakarn, Nantanit Wanichacheva
{"title":"Novel Hg2+‐Specific “turn-on” fluorescence sensor: Applications in water samples and test strips via real‐time colorimetric assay","authors":"Nirawit Kaewnok,&nbsp;Pimpisa Tabphan,&nbsp;Jitnapa Sirirak,&nbsp;Krit Setthakarn,&nbsp;Nantanit Wanichacheva","doi":"10.1016/j.jlumin.2024.121003","DOIUrl":"10.1016/j.jlumin.2024.121003","url":null,"abstract":"<div><div>Mercury pollution remains a global concern that causes harm to the environment and human health. Therefore, a rapid, sensitive, and effective method for detecting Hg<sup>2+</sup> in the environment must be developed. This study successfully synthesized a new Hg<sup>2+</sup>-specific fluorescence sensor based on thiocarbonyl-functionalized rhodamine (<strong>TRS</strong>). The sensor exhibits drastic fluorescence enhancement and a chromogenic change toward Hg<sup>2+</sup> in an aqueous methanol solution. Meanwhile, <strong>TRS</strong> can distinguish Hg<sup>2+</sup> from other competing ions with a detection limit of 8.7 nM (1.7 ppb). The sensor recognizes Hg<sup>2+</sup> with a 1:1 stoichiometric ratio, confirmed by Job's plot. Its sensing mechanism involves forming the Hg<sup>2+</sup> complex and later desulfurization mechanism, as intensively proved by FTIR, <sup>1</sup>H NMR, and <sup>13</sup>C NMR spectral analysis. The efficacy of <strong>TRS</strong> in colorimetric and fluorometric assays for monitoring Hg<sup>2+</sup> contents was validated using different real samples. A paper test strip developed from this sensor also demonstrated high selectivity for colorimetric Hg<sup>2+</sup> detection.</div></div>","PeriodicalId":16159,"journal":{"name":"Journal of Luminescence","volume":"278 ","pages":"Article 121003"},"PeriodicalIF":3.3,"publicationDate":"2024-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142758814","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Luminescence properties of β-Ga2O3:Bi single crystals growth by the optical floating zone method
IF 3.3 3区 物理与天体物理
Journal of Luminescence Pub Date : 2024-11-26 DOI: 10.1016/j.jlumin.2024.121002
Xiaolong Yang, Huili Tang, Chaoyi Zhang, Xianke Li, Wudi Wang, Xiaobo Huang, Xiaotong Peng, Chenbo Zhang, Jun Xu, Bo Liu
{"title":"Luminescence properties of β-Ga2O3:Bi single crystals growth by the optical floating zone method","authors":"Xiaolong Yang,&nbsp;Huili Tang,&nbsp;Chaoyi Zhang,&nbsp;Xianke Li,&nbsp;Wudi Wang,&nbsp;Xiaobo Huang,&nbsp;Xiaotong Peng,&nbsp;Chenbo Zhang,&nbsp;Jun Xu,&nbsp;Bo Liu","doi":"10.1016/j.jlumin.2024.121002","DOIUrl":"10.1016/j.jlumin.2024.121002","url":null,"abstract":"<div><div>β-Ga<sub>2</sub>O<sub>3</sub>, an advanced semiconductor optical material, exhibits remarkable luminescence properties through doping. In this study, β-Ga<sub>2</sub>O<sub>3</sub>:Bi single crystals were successfully grown using the optical floating zone method, and their luminescence mechanisms were investigated. Our results demonstrate that reducing the sintering temperature to 1000 °C enhances the incorporation of Bi into the crystal matrix. Temperature-dependent spectral analysis reveals the non-radiative transitions in the blue light region, contributing to fast luminescence dynamics. These findings deepen our understanding of the luminescence characteristics of β-Ga<sub>2</sub>O<sub>3</sub> single crystals and provide valuable insights for potential applications in radiation detection.</div></div>","PeriodicalId":16159,"journal":{"name":"Journal of Luminescence","volume":"278 ","pages":"Article 121002"},"PeriodicalIF":3.3,"publicationDate":"2024-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142748449","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Phototransferred thermoluminescence induced by 525 nm green light in α-Al2O3:C annealed at 1200oC
IF 3.3 3区 物理与天体物理
Journal of Luminescence Pub Date : 2024-11-26 DOI: 10.1016/j.jlumin.2024.121000
M.L. Chithambo, F.E.M. Elago
{"title":"Phototransferred thermoluminescence induced by 525 nm green light in α-Al2O3:C annealed at 1200oC","authors":"M.L. Chithambo,&nbsp;F.E.M. Elago","doi":"10.1016/j.jlumin.2024.121000","DOIUrl":"10.1016/j.jlumin.2024.121000","url":null,"abstract":"<div><div>Phototransferred thermoluminescence (PTTL) induced by 525 nm green light in α-Al<sub>2</sub>O<sub>3</sub>:C annealed at 1200<sup>o</sup>C has been studied. The annealing was done to alter the occupancy of electron traps and hole centres within the material. The conventional TL glow curve for measurements made at 1 <sup>o</sup>C/s shows three peaks at 54, 200, and 324<sup>o</sup>C labeled PI, PII, and PIII. Whereas the first two peaks are reproduced under phototransfer, the third at 325<sup>o</sup>C is not. Pulse annealing measurements imply that the PTTL observed at peak PI mainly originates from the electron trap of the dominant peak at 200<sup>o</sup>C. On the other hand, peak PIII itself is affected by competition effects whereby its charge trap appears to act both as a donor and as an acceptor in competition with electron traps at which PTTL ensues. Measurement of the PTTL of peak II between preheating temperatures of 500 and 650<sup>o</sup>C suggests that it can be linked, in part, to phototransfer from deep electron traps. PTTL time-response profiles have been formulated as systems of acceptor and donors.</div></div>","PeriodicalId":16159,"journal":{"name":"Journal of Luminescence","volume":"278 ","pages":"Article 121000"},"PeriodicalIF":3.3,"publicationDate":"2024-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142748442","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Efficient optical property screening of :Ce (RE = , and Y): Based on activator level position in host band gap Ce(RE = 、和 Y)的高效光学特性筛选:基于宿主带隙中的活化剂水平位置
IF 3.3 3区 物理与天体物理
Journal of Luminescence Pub Date : 2024-11-26 DOI: 10.1016/j.jlumin.2024.120996
Jiajia Cai , Haoming Xu , Jun Cheng , Canyou Mei , Songlin Li , CaiZhang Wu
{"title":"Efficient optical property screening of :Ce (RE = , and Y): Based on activator level position in host band gap","authors":"Jiajia Cai ,&nbsp;Haoming Xu ,&nbsp;Jun Cheng ,&nbsp;Canyou Mei ,&nbsp;Songlin Li ,&nbsp;CaiZhang Wu","doi":"10.1016/j.jlumin.2024.120996","DOIUrl":"10.1016/j.jlumin.2024.120996","url":null,"abstract":"<div><div>Property screening is essential to identify optical materials with desirable luminescent and thermal properties for specific applications under various conditions. As promising candidates for optical applications across diverse fields, Ce-doped <figure><img></figure> (RE = <figure><img></figure>, and Y) are studied by utilizing first-principles calculations based on density-functional theory. By employing a simple yet effective approach to analyze the electronic structures, we gain insights into the absorption edge characteristics of <figure><img></figure>, and evaluate the luminescent and thermal properties from the 4<em>f</em> and 5<em>d</em> positions of Ce in the host band gaps. Consequently, it is evident that the absence of luminescence in Ce-doped <figure><img></figure> is due to the 5<em>d</em> excited states of <figure><img></figure> being situated in the conduction band of <figure><img></figure>, regardless of its space group. While the 4<em>f</em> and 5<em>d</em> states of <figure><img></figure> reside within the band gap of other <figure><img></figure> hosts, potentially leading to luminescence. Excluding certain lanthanides due to potential charge transfer issues with <figure><img></figure>, our focus is directed towards the luminescent properties of Ce-doped <figure><img></figure>, <figure><img></figure>, <figure><img></figure>, and <figure><img></figure>. Based on schematic configuration coordinate diagrams, we conclude more significant thermal quenching resulting from 5<em>d</em> ionization in <figure><img></figure>:Ce and <figure><img></figure>:Ce compared to <figure><img></figure>:Ce and <figure><img></figure>:Ce. Furthermore, we provide valuable insights into the experimental phenomenon that the energy barrier for thermal quenching is smaller than that for thermal ionization in <figure><img></figure>:Ce. Additionally, we assess the photoelectric and thermoelectric performance based on the thermal and optical charge transition levels of Ce in <figure><img></figure>. Based on our study of the luminescent properties and thermal behaviors among Ce-doped <figure><img></figure>, we offer suggestions for screening Ce-activated optical materials, which provide valuable guidance for the design and optimization of specific materials.</div></div>","PeriodicalId":16159,"journal":{"name":"Journal of Luminescence","volume":"278 ","pages":"Article 120996"},"PeriodicalIF":3.3,"publicationDate":"2024-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142719584","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Synthesis and red emission properties of indolo[3,2-b]carbazole derivatives modified by β-diketone boron difluoride
IF 3.3 3区 物理与天体物理
Journal of Luminescence Pub Date : 2024-11-26 DOI: 10.1016/j.jlumin.2024.121001
Yuyang Zhang , Siya Liu , Ruihong Zhao , Yafeng Xu , Huijuan Zhao , Zhongming Song , Yueyuan Mao , Jing Tang , Xuchun Wang
{"title":"Synthesis and red emission properties of indolo[3,2-b]carbazole derivatives modified by β-diketone boron difluoride","authors":"Yuyang Zhang ,&nbsp;Siya Liu ,&nbsp;Ruihong Zhao ,&nbsp;Yafeng Xu ,&nbsp;Huijuan Zhao ,&nbsp;Zhongming Song ,&nbsp;Yueyuan Mao ,&nbsp;Jing Tang ,&nbsp;Xuchun Wang","doi":"10.1016/j.jlumin.2024.121001","DOIUrl":"10.1016/j.jlumin.2024.121001","url":null,"abstract":"<div><div>Organic fluorescent materials are extensively utilized in organic light-emitting diodes, biological imaging, fluorescent probes and other fields due to their easily controlled photophysical properties and high photostability. However, due to the constraints of energy band theory, compared to blue and green fluorescent materials, most organic red fluorescent materials possess large conjugated structures and introduce push-pull groups to regulate the distribution of electron clouds, which typically exhibit low fluorescent quantum efficiency. To investigate the regulatory mechanism of molecular spatial structure on the photophysical properties of red fluorescent materials, three derivatives of indolo[3,2-<em>b</em>]carbazole modified with <em>β</em>-diketone boron difluoride groups (named <strong>ICZ-H</strong>, <strong>ICZ-F</strong> and <strong>ICZ-CH</strong><sub><strong>3</strong></sub>) were designed and synthesized. A systematic study was conducted on the photophysical properties in organic solvents and aggregated states, and the relationship between their spatial structure and properties was explored in detail. The UV–Vis absorption and fluorescent emission spectra in various organic solvents revealed that all three compounds exhibited strong absorption peaks near 490 nm, with maximum molar absorption coefficient exceeded 6.0 × 10<sup>4</sup> L/(mol cm)<sup>−1</sup>. The fluorescent intensities decreased with increasing solvent polarity, accompanied by a red-shifted in the fluorescent peak position. In the meantime, density functional theory calculations were utilized to visualize the process of intramolecular charge transfer. The aggregation fluorescent behaviors in a mixed solvents of tetrahydrofuran and water showed that the fluorescent intensity initially decreased and then increased, suggesting that all three indolo[3,2-<em>b</em>]carbazole derivatives retained the fluorescent emission property during the aggregation process. The fluorescent emission spectra in the solid state showed that the fluorescent peaks of all three compounds were all over 630 nm, which belonged to typical red fluorescent materials. The study on the structure-properties relationship of this material provides an experimental basis and theoretical guidance for the design of red-emitting fluorescent materials with excellent photophysical properties.</div></div>","PeriodicalId":16159,"journal":{"name":"Journal of Luminescence","volume":"278 ","pages":"Article 121001"},"PeriodicalIF":3.3,"publicationDate":"2024-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142748448","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Ultrafast carrier dynamics in InGaN quantum well channel based high electron mobility transistor structure 基于 InGaN 量子阱沟道的高电子迁移率晶体管结构中的超快载流子动力学
IF 3.3 3区 物理与天体物理
Journal of Luminescence Pub Date : 2024-11-22 DOI: 10.1016/j.jlumin.2024.120997
Payal Taya , Salahuddin Khan , J. Jayabalan , Asha Singh , Vikash K. Singh , Vijay K. Dixit , Tarun K. Sharma
{"title":"Ultrafast carrier dynamics in InGaN quantum well channel based high electron mobility transistor structure","authors":"Payal Taya ,&nbsp;Salahuddin Khan ,&nbsp;J. Jayabalan ,&nbsp;Asha Singh ,&nbsp;Vikash K. Singh ,&nbsp;Vijay K. Dixit ,&nbsp;Tarun K. Sharma","doi":"10.1016/j.jlumin.2024.120997","DOIUrl":"10.1016/j.jlumin.2024.120997","url":null,"abstract":"<div><div>Ultrafast pump probe measurements on InGaN quantum well (QW) channel based high electron mobility transistor (HEMT) structure enable a direct measurement of the transit/capture time of electrons from GaN buffer layer to InGaN channel layer. Carrier capture time of 75 ± 10 fs is measured and the same is found to be independent of excitation wavelength. However, the capture process is delayed by 160 ± 5 fs when carriers are excited in GaN buffer layer. This happens due to the inclusion of transit time of carriers in GaN layer. It is confirmed by varying the wavelength of excitation where a delay in carrier transit is seen at longer wavelength. It is also seen that the strength of a feature associated with the carriers excited in GaN layer and captured by InGaN QW channel layer mimics the absorption spectrum of GaN, which also confirms that the delay in capture process is caused by the carriers excited in GaN layer. It is found that the capture process can be delayed even up to 240 ± 5 fs when the pump wavelength is kept at 390 nm. It is explained by considering the absorption in a deeper part of GaN layer and via the shallow defect states. Further, it is found that the localization of carriers in InGaN QW channel layer occurs at the time scales of 85 ± 10 fs. The transit/capture/localization time parameters reported in this work provide a crucial set of information, which is essential for modulating the carrier dynamics in InGaN/GaN based HEMTs and other high speed optoelectronic devices.</div></div>","PeriodicalId":16159,"journal":{"name":"Journal of Luminescence","volume":"278 ","pages":"Article 120997"},"PeriodicalIF":3.3,"publicationDate":"2024-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142706776","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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