InP-based vertical-cavity surface-emitting lasers with high output power and large modulation bandwidth

IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI:10.1109/ISLC.2002.1041157

R. Shau, G. Bohm, F. Kohler, M. Amann

引用次数: 2

Abstract

This paper presents VCSELs in the InGaAlAs-InP system that have been realized from 1.31 /spl mu/m to 1.8 /spl mu/m enabling the buried tunnel junction technology with particular emphasis on output power, operation temperature and modulation speed at 1.55 /spl mu/m, aiming for 10 Gbit/s transmission.

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基于inp的高输出功率和大调制带宽的垂直腔面发射激光器

本文介绍了在ingaala - inp系统中实现从1.31 /spl mu/m到1.8 /spl mu/m的vcsel，实现了以1.55 /spl mu/m的输出功率、工作温度和调制速度为重点的埋地隧道结技术，以10gbit /s的传输为目标。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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IEEE 18th International Semiconductor Laser Conference

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