1.3 /spl mu/m GaInNs激光器复合过程的实验与理论分析

IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI:10.1109/ISLC.2002.1041108

S. Tomić, R. Fehse, S. Choulis, E. O’Reilly, A. Adams, S. Sweeney, A. Andreev, T. Hosea, H. Riechert

{"title":"1.3 /spl mu/m GaInNs激光器复合过程的实验与理论分析","authors":"S. Tomić, R. Fehse, S. Choulis, E. O’Reilly, A. Adams, S. Sweeney, A. Andreev, T. Hosea, H. Riechert","doi":"10.1109/ISLC.2002.1041108","DOIUrl":null,"url":null,"abstract":"By measuring the spontaneous emission from normally operating /spl sim/1.3 /spl mu/m GaInNAs/GaAs-based lasers we have quantitatively determined the variation of each of the current paths present in the devices as a function of temperature from 130 K to 370 K.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"45 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Experimental and theoretical analysis of the recombination processes in GaInNs 1.3 /spl mu/m lasers\",\"authors\":\"S. Tomić, R. Fehse, S. Choulis, E. O’Reilly, A. Adams, S. Sweeney, A. Andreev, T. Hosea, H. Riechert\",\"doi\":\"10.1109/ISLC.2002.1041108\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"By measuring the spontaneous emission from normally operating /spl sim/1.3 /spl mu/m GaInNAs/GaAs-based lasers we have quantitatively determined the variation of each of the current paths present in the devices as a function of temperature from 130 K to 370 K.\",\"PeriodicalId\":179103,\"journal\":{\"name\":\"IEEE 18th International Semiconductor Laser Conference\",\"volume\":\"45 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE 18th International Semiconductor Laser Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISLC.2002.1041108\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE 18th International Semiconductor Laser Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.2002.1041108","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

通过测量正常工作/spl sim/1.3 /spl mu/m GaInNAs/ gaas基激光器的自发辐射，我们定量地确定了器件中存在的每个电流路径随温度从130 K到370 K的变化。

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Experimental and theoretical analysis of the recombination processes in GaInNs 1.3 /spl mu/m lasers

By measuring the spontaneous emission from normally operating /spl sim/1.3 /spl mu/m GaInNAs/GaAs-based lasers we have quantitatively determined the variation of each of the current paths present in the devices as a function of temperature from 130 K to 370 K.

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IEEE 18th International Semiconductor Laser Conference

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