Optical investigation of recombination processes in GaInNAs, InGaAsP and AlGalnAs quantum-well lasers using hydrostatic pressure

IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI:10.1109/ISLC.2002.1041129

S. R. Jin, S. Sweeney, G. Knowles, A. Adams, T. Higashi, H. Riechert, P. Thijs

引用次数: 1

Abstract

The lasing-energy dependence of carrier-recombination in InGaAsP, AlGaInAs and GaInNAs 1.3 /spl mu/m lasers is compared. For the first time we measure spontaneous emission at high pressure.

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静水压力下GaInNAs、InGaAsP和AlGalnAs量子阱激光器复合过程的光学研究

比较了InGaAsP、AlGaInAs和GaInNAs三种1.3 /spl mu/m激光器载流子复合的激光能量依赖性。我们第一次测量了高压下的自发辐射。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE 18th International Semiconductor Laser Conference

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