Y. Okuno, J. Geske, Y. Chiu, S. Denbaars, J. Bowers
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Polarization control of 1.3 /spl mu/m-wavelength vertical cavity surface emitting laser (VCSEL) fabricated by orientation-mismatched wafer bonding
A technique to control the polarization of long-wavelength InGaAsP MQW VCSELs is presented. The active region, grown on [311] InP, is wafer-bonded to [100] GaAs-based mirrors.
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