Polarization control of 1.3 /spl mu/m-wavelength vertical cavity surface emitting laser (VCSEL) fabricated by orientation-mismatched wafer bonding

IEEE 18th International Semiconductor Laser Conference Pub Date : 1900-01-01 DOI:10.1109/ISLC.2002.1041097

Y. Okuno, J. Geske, Y. Chiu, S. Denbaars, J. Bowers

引用次数: 4

Abstract

A technique to control the polarization of long-wavelength InGaAsP MQW VCSELs is presented. The active region, grown on [311] InP, is wafer-bonded to [100] GaAs-based mirrors.

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方向不匹配晶圆键合制备1.3 /spl μ m波长垂直腔面发射激光器的偏振控制

提出了一种控制长波长InGaAsP MQW VCSELs偏振的技术。生长在[311]InP上的活性区与[100]gaas基反射镜相结合。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE 18th International Semiconductor Laser Conference

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