S. R. Jin, S. Sweeney, G. Knowles, A. Adams, T. Higashi, H. Riechert, P. Thijs
{"title":"静水压力下GaInNAs、InGaAsP和AlGalnAs量子阱激光器复合过程的光学研究","authors":"S. R. Jin, S. Sweeney, G. Knowles, A. Adams, T. Higashi, H. Riechert, P. Thijs","doi":"10.1109/ISLC.2002.1041129","DOIUrl":null,"url":null,"abstract":"The lasing-energy dependence of carrier-recombination in InGaAsP, AlGaInAs and GaInNAs 1.3 /spl mu/m lasers is compared. For the first time we measure spontaneous emission at high pressure.","PeriodicalId":179103,"journal":{"name":"IEEE 18th International Semiconductor Laser Conference","volume":"97 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Optical investigation of recombination processes in GaInNAs, InGaAsP and AlGalnAs quantum-well lasers using hydrostatic pressure\",\"authors\":\"S. R. Jin, S. Sweeney, G. Knowles, A. Adams, T. Higashi, H. Riechert, P. Thijs\",\"doi\":\"10.1109/ISLC.2002.1041129\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The lasing-energy dependence of carrier-recombination in InGaAsP, AlGaInAs and GaInNAs 1.3 /spl mu/m lasers is compared. For the first time we measure spontaneous emission at high pressure.\",\"PeriodicalId\":179103,\"journal\":{\"name\":\"IEEE 18th International Semiconductor Laser Conference\",\"volume\":\"97 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE 18th International Semiconductor Laser Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISLC.2002.1041129\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE 18th International Semiconductor Laser Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.2002.1041129","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Optical investigation of recombination processes in GaInNAs, InGaAsP and AlGalnAs quantum-well lasers using hydrostatic pressure
The lasing-energy dependence of carrier-recombination in InGaAsP, AlGaInAs and GaInNAs 1.3 /spl mu/m lasers is compared. For the first time we measure spontaneous emission at high pressure.
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