Experimental and theoretical analysis of the recombination processes in GaInNs 1.3 /spl mu/m lasers

IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-12-10 DOI:10.1109/ISLC.2002.1041108

S. Tomić, R. Fehse, S. Choulis, E. O’Reilly, A. Adams, S. Sweeney, A. Andreev, T. Hosea, H. Riechert

引用次数: 2

Abstract

By measuring the spontaneous emission from normally operating /spl sim/1.3 /spl mu/m GaInNAs/GaAs-based lasers we have quantitatively determined the variation of each of the current paths present in the devices as a function of temperature from 130 K to 370 K.

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1.3 /spl mu/m GaInNs激光器复合过程的实验与理论分析

通过测量正常工作/spl sim/1.3 /spl mu/m GaInNAs/ gaas基激光器的自发辐射，我们定量地确定了器件中存在的每个电流路径随温度从130 K到370 K的变化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE 18th International Semiconductor Laser Conference

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