First CW operation of 1.3 /spl mu/m-range GaInNAsSb VCSELs and VCSEL array

IEEE 18th International Semiconductor Laser Conference Pub Date : 2002-09-29 DOI:10.1109/ISLC.2002.1041154

H. Shimizu, C. Setiagung, M. Ariga, K. Kumada, T. Hama, N. Ueda, N. Iwai, A. Kasukawa

引用次数: 1

Abstract

First CW operation of 1.3 /spl mu/m-range VCSELs and VCSEL array using GaInNAsSb quantum wells on GaAs substrates are reported. The threshold voltage is as low as 1.2 V, which is the lowest value ever reported for 1.3 /spl mu/m-range GaInNAs-based VCSELs, and the threshold current. of 10ch-array are as uniform as 1.85 /spl plusmn/ 0.15 mA at 25/spl deg/C.

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1.3 /spl mu/m范围GaInNAsSb VCSEL和VCSEL阵列的首次连续波运算

本文首次报道了在GaAs衬底上使用GaInNAsSb量子阱的1.3 /spl mu/m范围VCSEL和VCSEL阵列的连续波运算。阈值电压低至1.2 V，这是基于gainnas的1.3 /spl mu/m范围vcsel的最低值。在25/spl度/C时，10ch阵列的电压均匀为1.85 /spl plusmn/ 0.15 mA。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE 18th International Semiconductor Laser Conference

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