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Structural evolution and thermoelectric properties of Mg3SbxBi2−x thin films deposited by magnetron sputtering 磁控溅射沉积Mg3SbxBi2−x薄膜的结构演变和热电性能
3区 材料科学
Journal of Vacuum Science & Technology A Pub Date : 2023-06-13 DOI: 10.1116/6.0002635
Grzegorz Sadowski, Rui Shu, Arnaud le Febvrier, Zhijia Han, Denis Music, Weishu Liu, Per Eklund
{"title":"Structural evolution and thermoelectric properties of Mg3SbxBi2<i>−</i>x thin films deposited by magnetron sputtering","authors":"Grzegorz Sadowski, Rui Shu, Arnaud le Febvrier, Zhijia Han, Denis Music, Weishu Liu, Per Eklund","doi":"10.1116/6.0002635","DOIUrl":"https://doi.org/10.1116/6.0002635","url":null,"abstract":"Mg3Bi2-based compounds are of great interest for thermoelectric applications near room temperature. Here, undoped p-type Mg3SbxBi2−x thin films were synthesized using magnetron sputtering (three elemental targets in Ar atmosphere) with a growth temperature of 200 °C on three different substrates, namely, Si as well as c- and r-sapphire. The elemental composition was measured with energy-dispersive x-ray spectroscopy and the structure by x-ray diffraction. The electrical resistivity and the Seebeck coefficient were determined under He atmosphere from room temperature to the growth temperature. All samples are crystalline exhibiting the La2O3-type crystal structure (space group P-3m1). The observed thermoelectric response is consistent with a semiconductive behavior. With increasing x, the samples become more electrically resistive due to the increasing bandgap. High Bi content (x &amp;lt; 1) is thus beneficial due to lower resistivity and a higher power factor near room temperature. Thermoelectric thin films synthesized at low temperatures may provide novel pathways to enable flexible devices on polymeric and other heat-sensitive substrates.","PeriodicalId":17490,"journal":{"name":"Journal of Vacuum Science & Technology A","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136066216","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Surface structural analysis of CaF2(111) using low-energy atom scattering spectroscopy 利用低能原子散射光谱分析CaF2(111)的表面结构
3区 材料科学
Journal of Vacuum Science & Technology A Pub Date : 2023-05-30 DOI: 10.1116/6.0002392
Hiroaki Fukuta, Goon Tan, Tomoaki Oga, Akifumi Matsuda, Mamoru Yoshimoto, Kenji Umezawa
{"title":"Surface structural analysis of CaF2(111) using low-energy atom scattering spectroscopy","authors":"Hiroaki Fukuta, Goon Tan, Tomoaki Oga, Akifumi Matsuda, Mamoru Yoshimoto, Kenji Umezawa","doi":"10.1116/6.0002392","DOIUrl":"https://doi.org/10.1116/6.0002392","url":null,"abstract":"We determined the surface structure of cleaved CaF2(111) via atomic force microscopy and low-energy atom scattering spectroscopy for surface analyses of insulators. A pulsed 3 keV-20Ne0 impinged on the sample. The backscattered particles were detected at a scattering angle of 180°. It was found that (1) fluorine atoms dominated the topmost surfaces of cleaved CaF2(111) and (2) the topmost layer of fluorine atoms was located at an inward shift of 0.2 Å with respect to the bulk lattice structure.","PeriodicalId":17490,"journal":{"name":"Journal of Vacuum Science & Technology A","volume":"96 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135643424","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The ST component in the Si 2p photoemission spectrum from H-terminated and oxidized Si (001) surfaces 来自h端和氧化Si(001)表面的Si 2p光发射光谱中的ST组分
3区 材料科学
Journal of Vacuum Science & Technology A Pub Date : 2023-05-30 DOI: 10.1116/6.0002690
A. Herrera-Gomez, M. O. Vazquez-Lepe, P. G. Mani-Gonzalez, P. Pianetta, F. S. Aguirre-Tostado, O. Ceballos-Sanchez
{"title":"The <i>ST</i> component in the Si 2<i>p</i> photoemission spectrum from H-terminated and oxidized Si (001) surfaces","authors":"A. Herrera-Gomez, M. O. Vazquez-Lepe, P. G. Mani-Gonzalez, P. Pianetta, F. S. Aguirre-Tostado, O. Ceballos-Sanchez","doi":"10.1116/6.0002690","DOIUrl":"https://doi.org/10.1116/6.0002690","url":null,"abstract":"One doublet is usually employed to fit the Si0 substrate species in the Si 2p photoemission spectra from Si (001) H-terminated (after piranha treatment) and oxidized surfaces. However, there is a second substrate-top component (ST) with a binding energy of 0.3 eV higher than the bulk component; its intensity varies from ∼10% at normal emission (i.e., 90° from the surface) to ∼20% at 35°. It is present even for oxidized surfaces and does not correspond to any of the suboxide species. It corresponds to the first layers of the substrate and is responsible for the decrease in the signal dip between the two S–O branches of the Si 2p spectra for glancing electron takeoff angles. Although it is resolvable for monochromatized sources, the ST component is absent in the literature on Si 2p spectra.","PeriodicalId":17490,"journal":{"name":"Journal of Vacuum Science & Technology A","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135642793","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Plasma enhanced atomic layer deposition of manganese nitride thin film from manganese amidinate and ammonia plasma 等离子体增强氨基酸锰和氨等离子体原子层沉积氮化锰薄膜
3区 材料科学
Journal of Vacuum Science & Technology A Pub Date : 2023-05-23 DOI: 10.1116/6.0002484
Sen Chen, Jiaxuan Ren, Douhao Yang, Lijun Sang, Bowen Liu, Qiang Chen, Zhongwei Liu
{"title":"Plasma enhanced atomic layer deposition of manganese nitride thin film from manganese amidinate and ammonia plasma","authors":"Sen Chen, Jiaxuan Ren, Douhao Yang, Lijun Sang, Bowen Liu, Qiang Chen, Zhongwei Liu","doi":"10.1116/6.0002484","DOIUrl":"https://doi.org/10.1116/6.0002484","url":null,"abstract":"Manganese nitride films have been successfully fabricated by the technique of plasma enhanced atomic layer deposition (PEALD). The process employed bis(N,N'-di-tert-butylacetamidinate)manganese [Mn(amd)2] as manganese precursor and ammonia plasma as a coreactant. With a typical PEALD process cycle of 5 s Mn(amd)2 pulse, 10 s Ar purge pulse, 10 s NH3 plasma exposure, 10 s Ar purge pulse, 80 °C deposition temperature, and 60 W input power, the deposited film is continuous and smooth with a growth rate is 0.037 nm/cycle. Based on x-ray diffraction measurement, the film is determined to be η-Mn3N2 crystal structure. The primary deposition mechanism has been investigated by in situ optical emission spectroscopy and quartz crystal microbalance. The deposited manganese nitride film shows an excellent barrier performance against copper diffusion at insulator/copper interface.","PeriodicalId":17490,"journal":{"name":"Journal of Vacuum Science & Technology A","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135183577","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Erratum: “Thickness-dependent optical properties of aluminum nitride films for mid-infrared wavelengths” [J. Vac. Sci. Technol. A 39, 043408 (2021)] 校正:“中红外波段氮化铝薄膜厚度相关光学特性”[J]。真空吸尘器。科学。抛光工艺。A 39, 043408 (2021)]
IF 2.9 3区 材料科学
Journal of Vacuum Science & Technology A Pub Date : 2022-03-01 DOI: 10.1116/6.0001574
L. Beliaev, E. Shkondin, A. Lavrinenko, O. Takayama
{"title":"Erratum: “Thickness-dependent optical properties of aluminum nitride films for mid-infrared wavelengths” [J. Vac. Sci. Technol. A 39, 043408 (2021)]","authors":"L. Beliaev, E. Shkondin, A. Lavrinenko, O. Takayama","doi":"10.1116/6.0001574","DOIUrl":"https://doi.org/10.1116/6.0001574","url":null,"abstract":"","PeriodicalId":17490,"journal":{"name":"Journal of Vacuum Science & Technology A","volume":"11 1","pages":""},"PeriodicalIF":2.9,"publicationDate":"2022-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86612597","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Modified 3D-printed architectures: Effects of coating by alumina on acrylonitrile butadiene styrene 改性3d打印结构:氧化铝涂层对丙烯腈-丁二烯-苯乙烯的影响
IF 2.9 3区 材料科学
Journal of Vacuum Science & Technology A Pub Date : 2022-03-01 DOI: 10.1116/6.0001595
A. Varga, S. Barry
{"title":"Modified 3D-printed architectures: Effects of coating by alumina on acrylonitrile butadiene styrene","authors":"A. Varga, S. Barry","doi":"10.1116/6.0001595","DOIUrl":"https://doi.org/10.1116/6.0001595","url":null,"abstract":"3D-printed acrylonitrile butadiene styrene (ABS) polymer structures were coated with alumina (Al2O3) using the trimethylaluminum(III) and water atomic layer deposition (ALD) process at 80 °C, which resulted in a 203 nm thin film with a 1.35 Å growth per cycle. This thin film was a well-adhered protective overcoating on ABS to prevent reaction with acetone vapors in a solvent resistance experiment. Scratch tests were not able to remove the overcoating from the polymer surface, which provided a 50% and 32% increase in acetone vapor resistance before initial deformation and complete structure collapse, respectively. A more aggressive tape test caused delamination of the protective coating. This proof-of-concept experiment demonstrates how 3D printing combined with ALD overcoating can alter the chemical characteristics of complex polymer architectures.","PeriodicalId":17490,"journal":{"name":"Journal of Vacuum Science & Technology A","volume":"57 1","pages":""},"PeriodicalIF":2.9,"publicationDate":"2022-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73118998","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Room-temperature and high-quality HfO2/SiO2 gate stacked film grown by neutral beam enhanced atomic layer deposition 中性束增强原子层沉积法生长室温高品质HfO2/SiO2栅极堆叠薄膜
IF 2.9 3区 材料科学
Journal of Vacuum Science & Technology A Pub Date : 2022-03-01 DOI: 10.1116/6.0001607
B. Ge, D. Ohori, Yi-Ho Chen, T. Ozaki, K. Endo, Yiming Li, J. Tarng, S. Samukawa
{"title":"Room-temperature and high-quality HfO2/SiO2 gate stacked film grown by neutral beam enhanced atomic layer deposition","authors":"B. Ge, D. Ohori, Yi-Ho Chen, T. Ozaki, K. Endo, Yiming Li, J. Tarng, S. Samukawa","doi":"10.1116/6.0001607","DOIUrl":"https://doi.org/10.1116/6.0001607","url":null,"abstract":"","PeriodicalId":17490,"journal":{"name":"Journal of Vacuum Science & Technology A","volume":"1 1","pages":""},"PeriodicalIF":2.9,"publicationDate":"2022-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81927228","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Interaction of Mg with the ionic liquid 1-butyl-1-methylpyrrolidinium bis(trifluoromethylsulfonyl)imide—An experimental and computational model study of the electrode–electrolyte interface in post-lithium batteries 镁与离子液体1-丁基-1-甲基吡啶双(三氟甲基磺酰基)亚胺的相互作用——后锂电池电极-电解质界面的实验与计算模型研究
IF 2.9 3区 材料科学
Journal of Vacuum Science & Technology A Pub Date : 2022-03-01 DOI: 10.1116/6.0001658
F. Buchner, Katrin Forster-Tonigold, Tim Bolter, Alexander Rampf, Jens Klein, A. Gross, R. Behm
{"title":"Interaction of Mg with the ionic liquid 1-butyl-1-methylpyrrolidinium bis(trifluoromethylsulfonyl)imide—An experimental and computational model study of the electrode–electrolyte interface in post-lithium batteries","authors":"F. Buchner, Katrin Forster-Tonigold, Tim Bolter, Alexander Rampf, Jens Klein, A. Gross, R. Behm","doi":"10.1116/6.0001658","DOIUrl":"https://doi.org/10.1116/6.0001658","url":null,"abstract":"","PeriodicalId":17490,"journal":{"name":"Journal of Vacuum Science & Technology A","volume":"90 6 1","pages":""},"PeriodicalIF":2.9,"publicationDate":"2022-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83652521","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Sulfur-enhanced dynamics of coinage metal(111) surfaces: Step edges versus terraces as locations for metal-sulfur complex formation 硫增强的铸币金属(111)表面动力学:台阶边缘与阶地作为金属-硫复合体形成的位置
IF 2.9 3区 材料科学
Journal of Vacuum Science & Technology A Pub Date : 2022-03-01 DOI: 10.1116/6.0001408
Da‐Jiang Liu, J. Evans
{"title":"Sulfur-enhanced dynamics of coinage metal(111) surfaces: Step edges versus terraces as locations for metal-sulfur complex formation","authors":"Da‐Jiang Liu, J. Evans","doi":"10.1116/6.0001408","DOIUrl":"https://doi.org/10.1116/6.0001408","url":null,"abstract":"The propensity of trace amounts of sulfur adsorbed on coinage metal(111) surfaces to dramatically enhance surface dynamics has been demonstrated by STM observations of accelerated 2D island decay for Cu and Ag. It is generally accepted that this enhancement is due to the formation of adsorbed metal-sulfur complexes which facilitate surface mass transport of the metal. These complexes were originally proposed to form on terraces following extraction of metal atoms from step edges and subsequent combination with sulfur on the terraces. However, even when Th is is the au tho r’s pe er re vie we d, ac ce pte d m an us cri pt. H ow ev er , th e o nli ne ve rsi on of re co rd w ill be di ffe re nt fro m thi s v er sio n o nc e i t h as be en co py ed ite d a nd ty pe se t. PL EA SE C IT E TH IS A RT IC LE A S DO I: 10 .11 16 /6. 00 01 40 8","PeriodicalId":17490,"journal":{"name":"Journal of Vacuum Science & Technology A","volume":"42 1","pages":""},"PeriodicalIF":2.9,"publicationDate":"2022-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82042200","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Magnetic transition behavior in epitaxial Fe47Rh47Pd6 films 外延Fe47Rh47Pd6薄膜的磁跃迁行为
IF 2.9 3区 材料科学
Journal of Vacuum Science & Technology A Pub Date : 2022-03-01 DOI: 10.1116/6.0001573
H. Sato, N. Pachauri, S. Keshavarz, Chhatra R. Joshi, Hwachol Lee, G. Mankey, P. Leclair
{"title":"Magnetic transition behavior in epitaxial Fe47Rh47Pd6 films","authors":"H. Sato, N. Pachauri, S. Keshavarz, Chhatra R. Joshi, Hwachol Lee, G. Mankey, P. Leclair","doi":"10.1116/6.0001573","DOIUrl":"https://doi.org/10.1116/6.0001573","url":null,"abstract":"","PeriodicalId":17490,"journal":{"name":"Journal of Vacuum Science & Technology A","volume":"61 1","pages":""},"PeriodicalIF":2.9,"publicationDate":"2022-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76955831","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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