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Journal of Vacuum Science & Technology A最新文献

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Reconstruction changes drive surface diffusion and determine the flatness of oxide surfaces 重构变化驱动表面扩散，决定氧化表面的平整度
IF 2.9 3区 材料科学
Journal of Vacuum Science & Technology A Pub Date : 2022-03-01 DOI: 10.1116/6.0001704
Giada Franceschi, M. Schmid, U. Diebold, M. Riva
{"title":"Reconstruction changes drive surface diffusion and determine the flatness of oxide surfaces","authors":"Giada Franceschi, M. Schmid, U. Diebold, M. Riva","doi":"10.1116/6.0001704","DOIUrl":"https://doi.org/10.1116/6.0001704","url":null,"abstract":"Surface diffusion on metal oxides is key in many areas of materials technology, yet it has been scarcely explored at the atomic scale. This work provides phenomenological insights from scanning tunneling microscopy on the link between surface diffusion, surface atomic structure, and oxygen chemical potential based on three model oxide surfaces: Fe2O3[Formula: see text], La1− xSr xMnO3(110), and In2O3(111). In all instances, changing the oxygen chemical potential used for annealing stabilizes reconstructions of different compositions while promoting the flattening of the surface morphology—a sign of enhanced surface diffusion. It is argued that thermodynamics, rather than kinetics, rules surface diffusion under these conditions: the composition change of the surface reconstructions formed at differently oxidizing conditions drives mass transport across the surface.","PeriodicalId":17490,"journal":{"name":"Journal of Vacuum Science & Technology A","volume":null,"pages":null},"PeriodicalIF":2.9,"publicationDate":"2022-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80909835","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
High entropy alloy CrFeNiCoCu sputter deposited films: Structure, electrical properties, and oxidation 高熵合金CrFeNiCoCu溅射沉积薄膜:结构、电学性能和氧化
IF 2.9 3区 材料科学
Journal of Vacuum Science & Technology A Pub Date : 2022-03-01 DOI: 10.1116/6.0001394
J. Mayandi, M. Schrade, P. Vajeeston, M. Stange, A. Lind, M. Sunding, J. Deuermeier, E. Fortunato, O. Løvvik, A. Ulyashin, S. Diplas, P. Carvalho, T. Finstad
{"title":"High entropy alloy CrFeNiCoCu sputter deposited films: Structure, electrical properties, and oxidation","authors":"J. Mayandi, M. Schrade, P. Vajeeston, M. Stange, A. Lind, M. Sunding, J. Deuermeier, E. Fortunato, O. Løvvik, A. Ulyashin, S. Diplas, P. Carvalho, T. Finstad","doi":"10.1116/6.0001394","DOIUrl":"https://doi.org/10.1116/6.0001394","url":null,"abstract":"","PeriodicalId":17490,"journal":{"name":"Journal of Vacuum Science & Technology A","volume":null,"pages":null},"PeriodicalIF":2.9,"publicationDate":"2022-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77407731","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Many-body effects for the Mg 2s XPS of MgO MgO中mg2s XPS的多体效应
IF 2.9 3区 材料科学
Journal of Vacuum Science & Technology A Pub Date : 2022-03-01 DOI: 10.1116/6.0001655
P. Bagus, C. Nelin, C. Brundle, B. Vincent Crist
{"title":"Many-body effects for the Mg 2s XPS of MgO","authors":"P. Bagus, C. Nelin, C. Brundle, B. Vincent Crist","doi":"10.1116/6.0001655","DOIUrl":"https://doi.org/10.1116/6.0001655","url":null,"abstract":"","PeriodicalId":17490,"journal":{"name":"Journal of Vacuum Science & Technology A","volume":null,"pages":null},"PeriodicalIF":2.9,"publicationDate":"2022-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88079776","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Flow-modulated deposition of sp2-boron nitride using diborane and ammonia on chemomechanically polished (0001) 4H-SiC substrates 利用二硼烷和氨在化学机械抛光(0001)4H-SiC衬底上的流动调制沉积sp2-氮化硼
IF 2.9 3区 材料科学
Journal of Vacuum Science & Technology A Pub Date : 2022-03-01 DOI: 10.1116/6.0001698
Philip M. Jean-Remy, M. Cabral, R. Davis
{"title":"Flow-modulated deposition of sp2-boron nitride using diborane and ammonia on chemomechanically polished (0001) 4H-SiC substrates","authors":"Philip M. Jean-Remy, M. Cabral, R. Davis","doi":"10.1116/6.0001698","DOIUrl":"https://doi.org/10.1116/6.0001698","url":null,"abstract":"Nanocrystalline sp2-BN thin films have been grown on (0001) 4H-SiC substrates at 1030 °C via continuous flow and discontinuous flow-modulated chemical vapor deposition techniques using diborane (B2H6) and ammonia (NH3) as the B and N sources, respectively. The latter technique enabled observations of both the effect of hydrogen purge steps between precursor injections and the length of injection times for B2H6 on the stoichiometry and microstructure of the films. Stoichiometric BN was achieved in all films grown continuously within the N/B gas phase ratio range of 20–200; this was not observed for the discontinuously grown films unless both the B2H6 flow rate and the injection time were minimized. Cross-sectional transmission electron microscopy of films grown both continuously and discontinuously at N/B = 200 and using short B2H6 injection times relative to that of NH3 for the latter process route revealed the initial growth of ∼4 nm thick partially ordered sp2-BN layers. A transition zone then formed containing randomly oriented polycrystalline grains. Excess B incorporated into the discontinuously grown films during long B2H6 injection times resulted in single layer mixtures of amorphous and sp2-BN without any observed ordering.","PeriodicalId":17490,"journal":{"name":"Journal of Vacuum Science & Technology A","volume":null,"pages":null},"PeriodicalIF":2.9,"publicationDate":"2022-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83926992","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Methyl-methacrylate based aluminum hybrid film grown via three-precursor molecular layer deposition 三前驱体分子层沉积法制备甲基丙烯酸甲酯基铝杂化膜
IF 2.9 3区 材料科学
Journal of Vacuum Science & Technology A Pub Date : 2022-03-01 DOI: 10.1116/6.0001505
Solomon T. Oyakhire, Hayrensa Ablat, Nathaniel E. Richey, S. Bent
{"title":"Methyl-methacrylate based aluminum hybrid film grown via three-precursor molecular layer deposition","authors":"Solomon T. Oyakhire, Hayrensa Ablat, Nathaniel E. Richey, S. Bent","doi":"10.1116/6.0001505","DOIUrl":"https://doi.org/10.1116/6.0001505","url":null,"abstract":"","PeriodicalId":17490,"journal":{"name":"Journal of Vacuum Science & Technology A","volume":null,"pages":null},"PeriodicalIF":2.9,"publicationDate":"2022-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84366470","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Spherical-periodic order and relevant short-range structural units in simple crystal structures 简单晶体结构中的球周期序和相关的短程结构单元
IF 2.9 3区 材料科学
Journal of Vacuum Science & Technology A Pub Date : 2022-03-01 DOI: 10.1116/6.0001535
Shuang Zhang, C. Dong, P. Häussler
{"title":"Spherical-periodic order and relevant short-range structural units in simple crystal structures","authors":"Shuang Zhang, C. Dong, P. Häussler","doi":"10.1116/6.0001535","DOIUrl":"https://doi.org/10.1116/6.0001535","url":null,"abstract":"","PeriodicalId":17490,"journal":{"name":"Journal of Vacuum Science & Technology A","volume":null,"pages":null},"PeriodicalIF":2.9,"publicationDate":"2022-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86730765","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Atomic layer deposition of titanium phosphate onto reinforcing fibers using titanium tetrachloride, water, and tris(trimethylsilyl) phosphate as precursors 以四氯化钛、水和三甲基硅基磷酸为前体在增强纤维上沉积磷酸钛的原子层
IF 2.9 3区 材料科学
Journal of Vacuum Science & Technology A Pub Date : 2022-03-01 DOI: 10.1116/6.0001514
Paul Dill, Xiang Ren, Helen Hintersatz, M. Franz, D. Dentel, C. Tegenkamp, Susann Ebert
{"title":"Atomic layer deposition of titanium phosphate onto reinforcing fibers using titanium tetrachloride, water, and tris(trimethylsilyl) phosphate as precursors","authors":"Paul Dill, Xiang Ren, Helen Hintersatz, M. Franz, D. Dentel, C. Tegenkamp, Susann Ebert","doi":"10.1116/6.0001514","DOIUrl":"https://doi.org/10.1116/6.0001514","url":null,"abstract":"","PeriodicalId":17490,"journal":{"name":"Journal of Vacuum Science & Technology A","volume":null,"pages":null},"PeriodicalIF":2.9,"publicationDate":"2022-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76617804","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Photoactivated Ru chemical vapor deposition using (η3-allyl)Ru(CO)3X (X = Cl, Br, I): From molecular adsorption to Ru thin film deposition 利用(η - 3-烯丙基)Ru(CO)3X (X = Cl, Br, I)光活化Ru化学气相沉积:从分子吸附到Ru薄膜沉积
IF 2.9 3区 材料科学
Journal of Vacuum Science & Technology A Pub Date : 2022-03-01 DOI: 10.1116/6.0001490
Bryan G. Salazar, Christopher R. Brewer, L. McElwee‐White, A. Walker
{"title":"Photoactivated Ru chemical vapor deposition using (η3-allyl)Ru(CO)3X (X = Cl, Br, I): From molecular adsorption to Ru thin film deposition","authors":"Bryan G. Salazar, Christopher R. Brewer, L. McElwee‐White, A. Walker","doi":"10.1116/6.0001490","DOIUrl":"https://doi.org/10.1116/6.0001490","url":null,"abstract":"","PeriodicalId":17490,"journal":{"name":"Journal of Vacuum Science & Technology A","volume":null,"pages":null},"PeriodicalIF":2.9,"publicationDate":"2022-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73639026","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Control of etch profiles in high aspect ratio holes via precise reactant dosing in thermal atomic layer etching 在热原子层蚀刻中，通过精确的反应物剂量来控制高纵横比孔的蚀刻轮廓
IF 2.9 3区 材料科学
Journal of Vacuum Science & Technology A Pub Date : 2022-03-01 DOI: 10.1116/6.0001691
A. Fischer, Aaron Routzahn, Ryan J. Gasvoda, Jim Sims, T. Lill
{"title":"Control of etch profiles in high aspect ratio holes via precise reactant dosing in thermal atomic layer etching","authors":"A. Fischer, Aaron Routzahn, Ryan J. Gasvoda, Jim Sims, T. Lill","doi":"10.1116/6.0001691","DOIUrl":"https://doi.org/10.1116/6.0001691","url":null,"abstract":"","PeriodicalId":17490,"journal":{"name":"Journal of Vacuum Science & Technology A","volume":null,"pages":null},"PeriodicalIF":2.9,"publicationDate":"2022-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76436564","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
High wet-etch resistance SiO2 films deposited by plasma-enhanced atomic layer deposition with 1,1,1-tris(dimethylamino)disilane 1,1,1-三(二甲氨基)二硅烷等离子体增强原子层沉积制备高耐湿蚀SiO2薄膜
IF 2.9 3区 材料科学
Journal of Vacuum Science & Technology A Pub Date : 2022-03-01 DOI: 10.1116/6.0001519
S. Hwang, H. S. Kim, Dan N. Le, A. Sahota, Jaebeom Lee, Y. Jung, Sang Woo Kim, S. Kim, Rino Choi, Jinho Ahn, B. Hwang, Xiaobing Zhou, Jiyoung Kim
{"title":"High wet-etch resistance SiO2 films deposited by plasma-enhanced atomic layer deposition with 1,1,1-tris(dimethylamino)disilane","authors":"S. Hwang, H. S. Kim, Dan N. Le, A. Sahota, Jaebeom Lee, Y. Jung, Sang Woo Kim, S. Kim, Rino Choi, Jinho Ahn, B. Hwang, Xiaobing Zhou, Jiyoung Kim","doi":"10.1116/6.0001519","DOIUrl":"https://doi.org/10.1116/6.0001519","url":null,"abstract":"Figure 1. (a) Molecular structure of 1,1,1-tris(dimethylamino)disilane (TADS). The Si-Si bond can provide a higher molecular polarity and surface reactivity, which can be helpful for high-quality ALD SiO2 films. (b) In the temperature range of 115–390 C, TADS exhibits higher or at least comparable GPC in comparison with other aminosilane precursors. (c) The SiO2 films of TADS have not only high bulk film densities (< 2.38 g/cm at 390 C), which is higher than that (2.27 g/cm) of LPCVD SiO2 or close to that (2.4 g/cm ) of thermal oxide, but also high wet etch resistance with a WER of >1.6 nm/min in 200:1 HF.","PeriodicalId":17490,"journal":{"name":"Journal of Vacuum Science & Technology A","volume":null,"pages":null},"PeriodicalIF":2.9,"publicationDate":"2022-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84624187","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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