Journal of Vacuum Science & Technology A最新文献_第10页

Influence of the carrier wafer during GaN etching in Cl2 plasma 在Cl2等离子体中蚀刻GaN时载流子晶片的影响

IF 2.9 3区材料科学

Journal of Vacuum Science & Technology A Pub Date : 2022-03-01 DOI: 10.1116/6.0001478

Thibaut Meyer, C. Petit-Etienne, E. Pargon

{"title":"Influence of the carrier wafer during GaN etching in Cl2 plasma","authors":"Thibaut Meyer, C. Petit-Etienne, E. Pargon","doi":"10.1116/6.0001478","DOIUrl":"https://doi.org/10.1116/6.0001478","url":null,"abstract":"In this study we have performed a thorough characterization of GaN surface after etching up to 100 nm in Cl 2 plasma under various bias voltage and according to the carrier wafer used (Si, SiO 2 , Si 3 N 4 , photoresist). The objective of this article is to evaluate the etch damage and contamination of the GaN surface when materials with other chemical nature are present during the etching. The effects of etching conditions on surface morphology and chemical compositions of etched GaN films are studied in detail using XPS and AFM measurements. To this aim, an universal methodology is proposed to estimate accurately by XPS the stoichiometry of GaN surface exposed to reactive plasmas when only a Al Kα X-ray source is available. The results indicate that the GaN etching mechanisms are very sensitive to the chlorine radical density present in the plasma, the latter being strongly influenced by the carrier wafer. Substrates that are more chemically reactive with Cl 2 plasma such as silicon or photoresist compared to SiO 2 or Si 3 N 4 will lead to a greater loading of atomic chlorine, which in turn will lead to lower GaN etch rates. Moreover, the GaN surface contamination will depend on the etch byproducts ejected by the carrier wafer.","PeriodicalId":17490,"journal":{"name":"Journal of Vacuum Science & Technology A","volume":"304 1","pages":""},"PeriodicalIF":2.9,"publicationDate":"2022-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78907935","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 6

High entropy alloy CrFeNiCoCu sputter deposited films: Structure, electrical properties, and oxidation 高熵合金CrFeNiCoCu溅射沉积薄膜:结构、电学性能和氧化

IF 2.9 3区材料科学

Journal of Vacuum Science & Technology A Pub Date : 2022-03-01 DOI: 10.1116/6.0001394

J. Mayandi, M. Schrade, P. Vajeeston, M. Stange, A. Lind, M. Sunding, J. Deuermeier, E. Fortunato, O. Løvvik, A. Ulyashin, S. Diplas, P. Carvalho, T. Finstad

引用次数: 3

Many-body effects for the Mg 2s XPS of MgO MgO中mg2s XPS的多体效应

IF 2.9 3区材料科学

Journal of Vacuum Science & Technology A Pub Date : 2022-03-01 DOI: 10.1116/6.0001655

P. Bagus, C. Nelin, C. Brundle, B. Vincent Crist

引用次数: 0

Photoactivated Ru chemical vapor deposition using (η3-allyl)Ru(CO)3X (X = Cl, Br, I): From molecular adsorption to Ru thin film deposition 利用(η - 3-烯丙基)Ru(CO)3X (X = Cl, Br, I)光活化Ru化学气相沉积:从分子吸附到Ru薄膜沉积

IF 2.9 3区材料科学

Journal of Vacuum Science & Technology A Pub Date : 2022-03-01 DOI: 10.1116/6.0001490

Bryan G. Salazar, Christopher R. Brewer, L. McElwee‐White, A. Walker

引用次数: 1

Atomic layer deposition of titanium phosphate onto reinforcing fibers using titanium tetrachloride, water, and tris(trimethylsilyl) phosphate as precursors 以四氯化钛、水和三甲基硅基磷酸为前体在增强纤维上沉积磷酸钛的原子层

IF 2.9 3区材料科学

Journal of Vacuum Science & Technology A Pub Date : 2022-03-01 DOI: 10.1116/6.0001514

Paul Dill, Xiang Ren, Helen Hintersatz, M. Franz, D. Dentel, C. Tegenkamp, Susann Ebert

引用次数: 1

Methyl-methacrylate based aluminum hybrid film grown via three-precursor molecular layer deposition 三前驱体分子层沉积法制备甲基丙烯酸甲酯基铝杂化膜

IF 2.9 3区材料科学

Journal of Vacuum Science & Technology A Pub Date : 2022-03-01 DOI: 10.1116/6.0001505

Solomon T. Oyakhire, Hayrensa Ablat, Nathaniel E. Richey, S. Bent

引用次数: 1

Flow-modulated deposition of sp2-boron nitride using diborane and ammonia on chemomechanically polished (0001) 4H-SiC substrates 利用二硼烷和氨在化学机械抛光(0001)4H-SiC衬底上的流动调制沉积sp2-氮化硼

IF 2.9 3区材料科学

Journal of Vacuum Science & Technology A Pub Date : 2022-03-01 DOI: 10.1116/6.0001698

Philip M. Jean-Remy, M. Cabral, R. Davis

{"title":"Flow-modulated deposition of sp2-boron nitride using diborane and ammonia on chemomechanically polished (0001) 4H-SiC substrates","authors":"Philip M. Jean-Remy, M. Cabral, R. Davis","doi":"10.1116/6.0001698","DOIUrl":"https://doi.org/10.1116/6.0001698","url":null,"abstract":"Nanocrystalline sp2-BN thin films have been grown on (0001) 4H-SiC substrates at 1030 °C via continuous flow and discontinuous flow-modulated chemical vapor deposition techniques using diborane (B2H6) and ammonia (NH3) as the B and N sources, respectively. The latter technique enabled observations of both the effect of hydrogen purge steps between precursor injections and the length of injection times for B2H6 on the stoichiometry and microstructure of the films. Stoichiometric BN was achieved in all films grown continuously within the N/B gas phase ratio range of 20–200; this was not observed for the discontinuously grown films unless both the B2H6 flow rate and the injection time were minimized. Cross-sectional transmission electron microscopy of films grown both continuously and discontinuously at N/B = 200 and using short B2H6 injection times relative to that of NH3 for the latter process route revealed the initial growth of ∼4 nm thick partially ordered sp2-BN layers. A transition zone then formed containing randomly oriented polycrystalline grains. Excess B incorporated into the discontinuously grown films during long B2H6 injection times resulted in single layer mixtures of amorphous and sp2-BN without any observed ordering.","PeriodicalId":17490,"journal":{"name":"Journal of Vacuum Science & Technology A","volume":"39 1","pages":""},"PeriodicalIF":2.9,"publicationDate":"2022-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83926992","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Spherical-periodic order and relevant short-range structural units in simple crystal structures 简单晶体结构中的球周期序和相关的短程结构单元

IF 2.9 3区材料科学

Journal of Vacuum Science & Technology A Pub Date : 2022-03-01 DOI: 10.1116/6.0001535

Shuang Zhang, C. Dong, P. Häussler

引用次数: 1

High wet-etch resistance SiO2 films deposited by plasma-enhanced atomic layer deposition with 1,1,1-tris(dimethylamino)disilane 1,1,1-三(二甲氨基)二硅烷等离子体增强原子层沉积制备高耐湿蚀SiO2薄膜

IF 2.9 3区材料科学

Journal of Vacuum Science & Technology A Pub Date : 2022-03-01 DOI: 10.1116/6.0001519

S. Hwang, H. S. Kim, Dan N. Le, A. Sahota, Jaebeom Lee, Y. Jung, Sang Woo Kim, S. Kim, Rino Choi, Jinho Ahn, B. Hwang, Xiaobing Zhou, Jiyoung Kim

引用次数: 0

Control of etch profiles in high aspect ratio holes via precise reactant dosing in thermal atomic layer etching 在热原子层蚀刻中，通过精确的反应物剂量来控制高纵横比孔的蚀刻轮廓

IF 2.9 3区材料科学

Journal of Vacuum Science & Technology A Pub Date : 2022-03-01 DOI: 10.1116/6.0001691

A. Fischer, Aaron Routzahn, Ryan J. Gasvoda, Jim Sims, T. Lill

引用次数: 5