1,1,1-三(二甲氨基)二硅烷等离子体增强原子层沉积制备高耐湿蚀SiO2薄膜

IF 2.4 3区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Journal of Vacuum Science & Technology A Pub Date : 2022-03-01 DOI:10.1116/6.0001519

S. Hwang, H. S. Kim, Dan N. Le, A. Sahota, Jaebeom Lee, Y. Jung, Sang Woo Kim, S. Kim, Rino Choi, Jinho Ahn, B. Hwang, Xiaobing Zhou, Jiyoung Kim

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引用次数: 0

摘要

图1所示。(a) 1,1,1-三(二甲氨基)二硅烷(TADS)的分子结构。Si-Si键可以提供更高的分子极性和表面反应性，这有助于制备高质量的ALD SiO2薄膜。(b)在115-390℃的温度范围内，与其他氨基硅烷前体相比，TADS表现出更高或至少相当的GPC。(c) TADS的SiO2薄膜不仅具有较高的体膜密度(390℃时< 2.38 g/cm)，高于LPCVD SiO2 (2.27 g/cm)或接近热氧化SiO2 (2.4 g/cm)，而且在200:1 HF时具有较高的耐湿蚀性，其WER >1.6 nm/min。

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High wet-etch resistance SiO2 films deposited by plasma-enhanced atomic layer deposition with 1,1,1-tris(dimethylamino)disilane

Figure 1. (a) Molecular structure of 1,1,1-tris(dimethylamino)disilane (TADS). The Si-Si bond can provide a higher molecular polarity and surface reactivity, which can be helpful for high-quality ALD SiO2 films. (b) In the temperature range of 115–390 C, TADS exhibits higher or at least comparable GPC in comparison with other aminosilane precursors. (c) The SiO2 films of TADS have not only high bulk film densities (< 2.38 g/cm at 390 C), which is higher than that (2.27 g/cm) of LPCVD SiO2 or close to that (2.4 g/cm ) of thermal oxide, but also high wet etch resistance with a WER of >1.6 nm/min in 200:1 HF.

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来源期刊

Journal of Vacuum Science & Technology A 工程技术-材料科学：膜

CiteScore

5.10

自引率

10.30%

发文量

247

审稿时长

2.1 months

期刊介绍： Journal of Vacuum Science & Technology A publishes reports of original research, letters, and review articles that focus on fundamental scientific understanding of interfaces, surfaces, plasmas and thin films and on using this understanding to advance the state-of-the-art in various technological applications.