Journal of Vacuum Science & Technology A最新文献

ToF-SIMS analysis of ultrathin films and their fragmentation patterns. 超薄薄膜及其碎裂模式的 ToF-SIMS 分析。

IF 2.9 3区材料科学

Journal of Vacuum Science & Technology A Pub Date : 2024-03-01 Epub Date: 2024-02-05 DOI: 10.1116/6.0003249

Shin Muramoto, Daniel J Graham, David G Castner

{"title":"ToF-SIMS analysis of ultrathin films and their fragmentation patterns.","authors":"Shin Muramoto, Daniel J Graham, David G Castner","doi":"10.1116/6.0003249","DOIUrl":"10.1116/6.0003249","url":null,"abstract":"Organic thin films are of great interest due to their intriguing interfacial and functional properties, especially for device applications such as thin-film transistors and sensors. As their thickness approaches single nanometer thickness, characterization and interpretation of the extracted data become increasingly complex. In this study, plasma polymerization is used to construct ultrathin films that range in thickness from 1 to 20 nm, and time-of-flight secondary ion mass spectrometry coupled with principal component analysis is used to investigate the effects of film thickness on the resulting spectra. We demonstrate that for these cross-linked plasma polymers, at these thicknesses, the observed trends are different from those obtained from thicker films with lower degrees of cross-linking: contributions from ambient carbon contamination start to dominate the mass spectrum; cluster-induced nonlinear enhancement in secondary ion yield is no longer observed; extent of fragmentation is higher due to confinement of the primary ion energy; and the size of the primary ion source also affects fragmentation (e.g., Bi1 versus Bi5). These differences illustrate that care must be taken in choosing the correct primary ion source as well as in interpreting the data.","PeriodicalId":17490,"journal":{"name":"Journal of Vacuum Science & Technology A","volume":null,"pages":null},"PeriodicalIF":2.9,"publicationDate":"2024-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10846908/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139702854","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Spinel LiGa5O8 prospects as ultra-wideband-gap semiconductor: Band structure, optical properties, and doping 尖晶石 LiGa5O8 作为超宽带隙半导体的前景：带状结构、光学特性和掺杂

IF 2.9 3区材料科学

Journal of Vacuum Science & Technology A Pub Date : 2024-02-13 DOI: 10.1116/6.0003117

Walter R. L. Lambrecht

引用次数: 0

Plasma nitridation for atomic layer etching of Ni 等离子氮化技术用于镍的原子层蚀刻

IF 2.9 3区材料科学

Journal of Vacuum Science & Technology A Pub Date : 2024-01-31 DOI: 10.1116/6.0003263

Taylor G. Smith, Ali M. Ali, Jean-François de Marneffe, Jane P. Chang

引用次数: 0

Dislocation avalanches in nanostructured molybdenum nanopillars 纳米结构钼纳米柱中的位错雪崩

IF 2.9 3区材料科学

Journal of Vacuum Science & Technology A Pub Date : 2024-01-31 DOI: 10.1116/6.0003254

Haw-Wen Hsiao, Jia-Hong Huang, Jian-Min Zuo

引用次数: 0

Kinetic Monte Carlo study on the effect of growth conditions on the epitaxial growth of 3C–SiC (0001) vicinal surface 生长条件对 3C-SiC (0001) vicinal 表面外延生长影响的动力学蒙特卡洛研究

IF 2.9 3区材料科学

Journal of Vacuum Science & Technology A Pub Date : 2024-01-30 DOI: 10.1116/6.0003144

Xuejiang Chen, Xinyao Zhang, Wensen Ai

{"title":"Kinetic Monte Carlo study on the effect of growth conditions on the epitaxial growth of 3C–SiC (0001) vicinal surface","authors":"Xuejiang Chen, Xinyao Zhang, Wensen Ai","doi":"10.1116/6.0003144","DOIUrl":"https://doi.org/10.1116/6.0003144","url":null,"abstract":"Due to the lack of research on the microscopic evolution process and the formation of step growth patterns for SiC crystals, it is of great importance to deepen the understanding of the epitaxial growth of a SiC vicinal surface from a microscopic point of view. In this study, a three-dimensional lattice kinetic Monte Carlo algorithm was used to study the step flow growth characteristics of SiC crystals. The microscopic evolution of the step flow growth patterns for SiC vicinal surfaces was shown. C and Si were treated as the basic particles, and the net deposition and diffusion of atoms were considered in this model. The periodic boundary conditions were applied along the step edge and the helical boundary conditions were applied in the direction perpendicular to the step. The surface morphology evolution of SiC crystals grown on step substrates was simulated at different growth temperatures, partial deposition fluxes, and terrace widths. The results indicated that the growth patterns of the SiC vicinal surface could be transformed from a step flow growth to a nucleation growth pattern by decreasing the growth temperature, increasing the deposition flux, and increasing the terrace width.","PeriodicalId":17490,"journal":{"name":"Journal of Vacuum Science & Technology A","volume":null,"pages":null},"PeriodicalIF":2.9,"publicationDate":"2024-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140056216","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Hardness, adhesion, and wear behavior of magnetron cosputtered Ti:Zr-O-N thin films 磁控共溅射 Ti:Zr-O-N 薄膜的硬度、附着力和磨损行为

IF 2.9 3区材料科学

Journal of Vacuum Science & Technology A Pub Date : 2024-01-30 DOI: 10.1116/6.0003267

D. Cristea, A. I. Scărlătescu, G. Bulai, D. Martínez-Martínez, C. I. da Silva Oliveira, G. Yan, L. Cunha

{"title":"Hardness, adhesion, and wear behavior of magnetron cosputtered Ti:Zr-O-N thin films","authors":"D. Cristea, A. I. Scărlătescu, G. Bulai, D. Martínez-Martínez, C. I. da Silva Oliveira, G. Yan, L. Cunha","doi":"10.1116/6.0003267","DOIUrl":"https://doi.org/10.1116/6.0003267","url":null,"abstract":"Reactive magnetron sputtering was used to deposit Ti:Zr-O-N thin films, by using a single Zr target, with Ti ribbons placed on the erosion track of the Zr sputtering target. Zr-O-N thin films have been also deposited in the same chamber to be used as reference films. The number of Ti ribbons, the applied sputtering current, and the reactive gas flow were the variable parameters. The films were analyzed in terms of structural development and mechanical properties (instrumented indentation, adhesion scratch testing, and wear analysis). The films are either amorphous or composed of a mixture of crystalline phases based on zirconium and titanium oxides or nitrides. Hardness values are situated between ∼10 and 11 GPa for the reference films (deposited without Ti) and up to ∼22 GPa for one of the Ti:Zr-O-N films. The films deposited without Ti behave slightly better in terms of adhesion to the substrate in comparison to the remaining samples in relation to the occurrence of first cracks (Lc1, critical load 1) and for first delamination (Lc2, critical load 2), a phenomenon probably related to the lower hardness of these films, which can accommodate the plastic deformation caused by the diamond indenter, prior to the occurrence of delamination. Adhesion to the substrate is a critical characteristic during wear tests since some of the coatings exhibit severe delamination.","PeriodicalId":17490,"journal":{"name":"Journal of Vacuum Science & Technology A","volume":null,"pages":null},"PeriodicalIF":2.9,"publicationDate":"2024-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140056095","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Atomic layer etching of indium tin oxide 原子层蚀刻氧化铟锡

IF 2.9 3区材料科学

Journal of Vacuum Science & Technology A Pub Date : 2024-01-30 DOI: 10.1116/6.0003170

Christoffer Kauppinen

引用次数: 0

Composition dependence of intrinsic surface states and Fermi-level pinning at ternary AlxGa1−xN m-plane surfaces 三元 AlxGa1-xN m 平面本征表面态和费米级钉扎的成分依赖性

IF 2.9 3区材料科学

Journal of Vacuum Science & Technology A Pub Date : 2024-01-29 DOI: 10.1116/6.0003225

Lars Freter, Liverios Lymperakis, Michael Schnedler, Holger Eisele, Lei Jin, Jianxun Liu, Qian Sun, Rafal E. Dunin-Borkowski, Philipp Ebert

{"title":"Composition dependence of intrinsic surface states and Fermi-level pinning at ternary AlxGa1−xN m-plane surfaces","authors":"Lars Freter, Liverios Lymperakis, Michael Schnedler, Holger Eisele, Lei Jin, Jianxun Liu, Qian Sun, Rafal E. Dunin-Borkowski, Philipp Ebert","doi":"10.1116/6.0003225","DOIUrl":"https://doi.org/10.1116/6.0003225","url":null,"abstract":"Growth on nonpolar group III-nitride semiconductor surfaces has been suggested to be a remedy for avoiding detrimental polarization effects. However, the presence of intrinsic surface states within the fundamental bandgap at nonpolar surfaces leads to a Fermi-level pinning during growth, affecting the incorporation of dopants and impurities. This is further complicated by the use of ternary, e.g., AlxGa1−xN layers in device structures. In order to quantify the Fermi-level pinning on ternary group III nitride nonpolar growth surface, the energy position of the group III-derived empty dangling bond surface state at nonpolar AlxGa1−xN(101¯0) surfaces is determined as a function of the Al concentration using cross-sectional scanning tunneling microscopy and spectroscopy. The measurements show that the minimum energy of the empty dangling bond state shifts linearly toward midgap for increasing Al concentration with a slope of ≈5 meV/%. These experimental findings are supported by complementary density functional theory calculations.","PeriodicalId":17490,"journal":{"name":"Journal of Vacuum Science & Technology A","volume":null,"pages":null},"PeriodicalIF":2.9,"publicationDate":"2024-01-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140057742","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Spatial distribution diagnosis of electron temperature and density of argon inductively coupled plasma by tomographic optical emission spectroscopic measurement and collisional-radiative model 利用断层光学发射光谱测量和碰撞辐射模型诊断氩电感耦合等离子体电子温度和密度的空间分布情况

IF 2.9 3区材料科学

Journal of Vacuum Science & Technology A Pub Date : 2024-01-29 DOI: 10.1116/6.0003209

Yuya Yamashita, Kenta Doi, Tetsuji Kiyota, Kenta Ishi, Shuhei Watanabe, Wataru Kikuchi, Atsushi Nezu, Hiroshi Akatsuka

{"title":"Spatial distribution diagnosis of electron temperature and density of argon inductively coupled plasma by tomographic optical emission spectroscopic measurement and collisional-radiative model","authors":"Yuya Yamashita, Kenta Doi, Tetsuji Kiyota, Kenta Ishi, Shuhei Watanabe, Wataru Kikuchi, Atsushi Nezu, Hiroshi Akatsuka","doi":"10.1116/6.0003209","DOIUrl":"https://doi.org/10.1116/6.0003209","url":null,"abstract":"There are few reported cases in which the spatial distribution of spectral emission coefficients of plasmas from tomographic optical emission spectroscopy measurements is analyzed based on a collisional-radiative model to diagnose the spatial distribution electron temperature of Te and density Ne. This study aimed at in situ diagnosis of process plasma. The spectral radiance of 18 lines-of-sight was measured simultaneously in argon inductively coupled plasma. The spatial distribution of the excited level number density distribution was calculated from the spatial distribution of spectral emission coefficients obtained from spectral tomography calculations. The three-dimensional distribution of Te and Ne was analyzed using a collisional-radiative model from the obtained spatial distribution of the excited levels number density. The effects of power and pressure on the dependence of the spatial distribution of Te and Ne were discussed. Furthermore, data processing methods for spectral tomographic measurements with coarse wavelength resolution were also discussed.","PeriodicalId":17490,"journal":{"name":"Journal of Vacuum Science & Technology A","volume":null,"pages":null},"PeriodicalIF":2.9,"publicationDate":"2024-01-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140056294","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

Exploring the thermal behavior and diffusive functionality of structural defects and phase boundaries in near-stoichiometric chromium diborides by in situ scanning transmission electron microscopy 利用原位扫描透射电子显微镜探索近原子序数二硼化合铬中结构缺陷和相界的热行为和扩散功能

IF 2.9 3区材料科学

Journal of Vacuum Science & Technology A Pub Date : 2024-01-29 DOI: 10.1116/6.0003389

Per O. Å. Persson, Johanna Rosen, Ivan Petrov, Justinas Palisaitis

引用次数: 0