{"title":"Kinetic Monte Carlo study on the effect of growth conditions on the epitaxial growth of 3C–SiC (0001) vicinal surface","authors":"Xuejiang Chen, Xinyao Zhang, Wensen Ai","doi":"10.1116/6.0003144","DOIUrl":null,"url":null,"abstract":"Due to the lack of research on the microscopic evolution process and the formation of step growth patterns for SiC crystals, it is of great importance to deepen the understanding of the epitaxial growth of a SiC vicinal surface from a microscopic point of view. In this study, a three-dimensional lattice kinetic Monte Carlo algorithm was used to study the step flow growth characteristics of SiC crystals. The microscopic evolution of the step flow growth patterns for SiC vicinal surfaces was shown. C and Si were treated as the basic particles, and the net deposition and diffusion of atoms were considered in this model. The periodic boundary conditions were applied along the step edge and the helical boundary conditions were applied in the direction perpendicular to the step. The surface morphology evolution of SiC crystals grown on step substrates was simulated at different growth temperatures, partial deposition fluxes, and terrace widths. The results indicated that the growth patterns of the SiC vicinal surface could be transformed from a step flow growth to a nucleation growth pattern by decreasing the growth temperature, increasing the deposition flux, and increasing the terrace width.","PeriodicalId":17490,"journal":{"name":"Journal of Vacuum Science & Technology A","volume":null,"pages":null},"PeriodicalIF":2.4000,"publicationDate":"2024-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Vacuum Science & Technology A","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1116/6.0003144","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, COATINGS & FILMS","Score":null,"Total":0}
引用次数: 0
Abstract
Due to the lack of research on the microscopic evolution process and the formation of step growth patterns for SiC crystals, it is of great importance to deepen the understanding of the epitaxial growth of a SiC vicinal surface from a microscopic point of view. In this study, a three-dimensional lattice kinetic Monte Carlo algorithm was used to study the step flow growth characteristics of SiC crystals. The microscopic evolution of the step flow growth patterns for SiC vicinal surfaces was shown. C and Si were treated as the basic particles, and the net deposition and diffusion of atoms were considered in this model. The periodic boundary conditions were applied along the step edge and the helical boundary conditions were applied in the direction perpendicular to the step. The surface morphology evolution of SiC crystals grown on step substrates was simulated at different growth temperatures, partial deposition fluxes, and terrace widths. The results indicated that the growth patterns of the SiC vicinal surface could be transformed from a step flow growth to a nucleation growth pattern by decreasing the growth temperature, increasing the deposition flux, and increasing the terrace width.
由于缺乏对 SiC 晶体微观演化过程和阶梯生长模式形成的研究,因此从微观角度加深对 SiC 晶面外延生长的理解具有重要意义。本研究采用三维晶格动力学蒙特卡洛算法研究了 SiC 晶体的阶梯流生长特性。研究显示了 SiC 晶面阶梯流生长模式的微观演化过程。该模型将 C 和 Si 视为基本粒子,并考虑了原子的净沉积和扩散。沿着阶梯边缘应用了周期性边界条件,在垂直于阶梯的方向应用了螺旋边界条件。在不同的生长温度、部分沉积通量和台阶宽度下,模拟了在台阶基底上生长的碳化硅晶体的表面形貌演变。结果表明,通过降低生长温度、增加沉积通量和增大台阶宽度,SiC 的临界表面生长模式可从台阶流生长转变为成核生长模式。
期刊介绍:
Journal of Vacuum Science & Technology A publishes reports of original research, letters, and review articles that focus on fundamental scientific understanding of interfaces, surfaces, plasmas and thin films and on using this understanding to advance the state-of-the-art in various technological applications.