Control of etch profiles in high aspect ratio holes via precise reactant dosing in thermal atomic layer etching

IF 2.4 3区材料科学 Q3 MATERIALS SCIENCE, COATINGS & FILMS

Journal of Vacuum Science & Technology A Pub Date : 2022-03-01 DOI:10.1116/6.0001691

A. Fischer, Aaron Routzahn, Ryan J. Gasvoda, Jim Sims, T. Lill

引用次数: 5

查看原文本刊更多论文

在热原子层蚀刻中，通过精确的反应物剂量来控制高纵横比孔的蚀刻轮廓

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Journal of Vacuum Science & Technology A 工程技术-材料科学：膜

CiteScore

5.10

自引率

10.30%

发文量

247

审稿时长

2.1 months

期刊介绍： Journal of Vacuum Science & Technology A publishes reports of original research, letters, and review articles that focus on fundamental scientific understanding of interfaces, surfaces, plasmas and thin films and on using this understanding to advance the state-of-the-art in various technological applications.