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2016 IEEE International Reliability Physics Symposium (IRPS)最新文献

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1/f Noise measurements for faster electromigration characterization 1/f用于更快电迁移表征的噪声测量
2016 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2016-04-17 DOI: 10.1109/IRPS.2016.7574549
S. Beyne, K. Croes, I. De Wolf, Z. Tokei
{"title":"1/f Noise measurements for faster electromigration characterization","authors":"S. Beyne, K. Croes, I. De Wolf, Z. Tokei","doi":"10.1109/IRPS.2016.7574549","DOIUrl":"https://doi.org/10.1109/IRPS.2016.7574549","url":null,"abstract":"The application of 1/f noise measurements to speed up electromigration (EM) testing and provide a better understanding of the underlying mechanisms of electromigration in advanced microelectronics interconnects is investigated. It is shown that 1/f noise measurements can be used for early EM damage detection during EM stress, before any changes in the resistance of the sample are observable. Also, the temperature dependence of the low frequency noise is used to calculate activation energies, which are then demonstrated to be similar to values found for electromigration using standard EM tests. Furthermore, the 1/f noise technique is used to assess and compare the EM properties of various advanced integration schemes and different materials. The 1/f noise measurements provide new evidence for the importance of grain boundary diffusion as a dominant EM failure mechanism in highly scaled interconnects.","PeriodicalId":172129,"journal":{"name":"2016 IEEE International Reliability Physics Symposium (IRPS)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124360170","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Hot carrier reliability characterization in consideration of self-heating in FinFET technology 考虑FinFET技术自热的热载流子可靠性表征
2016 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2016-04-17 DOI: 10.1109/IRPS.2016.7574505
M. Jin, Changze Liu, Jinju Kim, Jungin Kim, S. Choo, Yoohwan Kim, H. Shim, Lijie Zhang, K. Nam, Jongwoo Park, S. Pae, Haebum Lee
{"title":"Hot carrier reliability characterization in consideration of self-heating in FinFET technology","authors":"M. Jin, Changze Liu, Jinju Kim, Jungin Kim, S. Choo, Yoohwan Kim, H. Shim, Lijie Zhang, K. Nam, Jongwoo Park, S. Pae, Haebum Lee","doi":"10.1109/IRPS.2016.7574505","DOIUrl":"https://doi.org/10.1109/IRPS.2016.7574505","url":null,"abstract":"A severity of hot carrier injection (HCI) in PFET becomes worse than NFET at elevated temperatures. This new observation is further found to be due to the coupled self-heating effects (SHE) during DC HCI stress (also a higher Ea in PFET HCI), rather than the negative bias temperature instability (NBTI) effect during HCI stress. Furthermore, in order to guarantee the precise estimation of HCI under circuit level AC condition, a new empirical HCI lifetime model decoupled from the SHE is proposed, which is further verified by the Si data from nanosecond pulsed waveform HCI stress and Ring Oscillator stress results.","PeriodicalId":172129,"journal":{"name":"2016 IEEE International Reliability Physics Symposium (IRPS)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128451498","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 51
Analog-circuit NBTI degradation and time-dependent NBTI variability: An efficient physics-based compact model 模拟电路NBTI退化和随时间变化的NBTI变异性:一个有效的基于物理的紧凑模型
2016 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2016-04-17 DOI: 10.1109/IRPS.2016.7574540
K. Giering, G. Rott, G. Rzepa, Hans Reisinger, A. Puppala, T. Reich, W. Gustin, Tibor Grasser, Roland Jancke
{"title":"Analog-circuit NBTI degradation and time-dependent NBTI variability: An efficient physics-based compact model","authors":"K. Giering, G. Rott, G. Rzepa, Hans Reisinger, A. Puppala, T. Reich, W. Gustin, Tibor Grasser, Roland Jancke","doi":"10.1109/IRPS.2016.7574540","DOIUrl":"https://doi.org/10.1109/IRPS.2016.7574540","url":null,"abstract":"We experimentally and theoretically investigate the NBTI degradation of pMOS devices due to analog stress voltages and thus go beyond existing NBTI studies for digital stress. As a result, we propose a physics-based compact model for analog-stress NBTI which builds upon the extensive TCAD analysis of our ultra-short-delay experimental data. The numerical efficiency of the compact model allows its direct coupling to electric circuit simulators and permits to accurately account for NBTI degradation already during circuit design. Our model enables the calculation of the time-dependent NBTI variability of single device and of circuit performance parameters. We demonstrate our NBTI model on an operational amplifier and calculate the mean drift and variability of its offset voltage.","PeriodicalId":172129,"journal":{"name":"2016 IEEE International Reliability Physics Symposium (IRPS)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128248359","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 15
Investigating the single-event-transient sensitivity of 65 nm clock trees with heavy ion irradiation and Monte-Carlo simulation 用重离子辐照和蒙特卡罗模拟研究65nm时钟树的单事件瞬态灵敏度
2016 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2016-04-17 DOI: 10.1109/IRPS.2016.7574639
V. Malherbe, G. Gasiot, S. Clerc, F. Abouzeid, J. Autran, P. Roche
{"title":"Investigating the single-event-transient sensitivity of 65 nm clock trees with heavy ion irradiation and Monte-Carlo simulation","authors":"V. Malherbe, G. Gasiot, S. Clerc, F. Abouzeid, J. Autran, P. Roche","doi":"10.1109/IRPS.2016.7574639","DOIUrl":"https://doi.org/10.1109/IRPS.2016.7574639","url":null,"abstract":"We present a study of single-event transients in clock tree structures in 65 nm bulk silicon technology. Shift registers are irradiated with heavy ions over a large range of linear energy transfers representative of both terrestrial and space environments. By attributing large error clusters in the flip-flop shifters to clock tree events, we derive experimental cross sections for the clock tree cells. Monte-Carlo irradiation simulations performed on the same structures are in good agreement with these data, allowing to assess the radiation robustness of other clock-tree configurations.","PeriodicalId":172129,"journal":{"name":"2016 IEEE International Reliability Physics Symposium (IRPS)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128957626","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Towards an appropriate acceleration model for beol tddb 建立合适的beol - tddb加速模型
2016 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2016-04-17 DOI: 10.1109/IRPS.2016.7574598
R. Muralidhar, E. Liniger, T. Shaw, A. Kim, G. Bonilla
{"title":"Towards an appropriate acceleration model for beol tddb","authors":"R. Muralidhar, E. Liniger, T. Shaw, A. Kim, G. Bonilla","doi":"10.1109/IRPS.2016.7574598","DOIUrl":"https://doi.org/10.1109/IRPS.2016.7574598","url":null,"abstract":"TDDB lifetime projections at operating voltages for backend of line (BEOL) dielectrics have been based on accelerated testing at high fields and extrapolation to operating conditions based on electric field dependent dielectric wear-out models. In this paper, we examine the veracity of common TDDB models by using a large set of failure data spanning 3 pitches. Key components of the approach include (i) investigating the universality of failure time data at 3 pitches and different test structure areas using area scaling, (ii) using the universal curve of failure time data to test the acceleration model for 3 pitches and (iii) examining the ability of the models to extrapolate to low field data using high field data for fitting and vice versa. While almost all models seem appropriate when entire set of data (low and high field) is used to fit, fitting only high or low field data and testing the ability to predict low and high fields respectively, shows that power-law and impact damage models extrapolate much better than the root-E model that shows systematic deviation during extrapolation.","PeriodicalId":172129,"journal":{"name":"2016 IEEE International Reliability Physics Symposium (IRPS)","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132505653","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Fundamental statistical properties of reconstruction methodology for TDDB with variability in BEOL/MOL/FEOL applications BEOL/MOL/FEOL应用中具有变异性的TDDB重建方法的基本统计性质
2016 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2016-04-17 DOI: 10.1109/IRPS.2016.7574510
E. Wu, J. Stathis, Baozhen Li, A. Kim, B. Linder, R. Bolam, G. Bonilla
{"title":"Fundamental statistical properties of reconstruction methodology for TDDB with variability in BEOL/MOL/FEOL applications","authors":"E. Wu, J. Stathis, Baozhen Li, A. Kim, B. Linder, R. Bolam, G. Bonilla","doi":"10.1109/IRPS.2016.7574510","DOIUrl":"https://doi.org/10.1109/IRPS.2016.7574510","url":null,"abstract":"In this work, we investigate the validity of the so-called big-data deconvolution approach with its use of sampling-based reconstruction methodology for general applications to BEOL and MOL dielectrics with substantial non-uniformity and multiple variability sources. Unlike conventional statistical sampling, we have found that all parameters (β and T63) and area scaling characteristics of reconstructed Weibull distributions along with T63 variation (σT63) across the sampling units (chips or dies) show a strong dependence on sampling number per unit (chip). We developed the statistical theory to correctly characterize the sampling number dependence of reconstructed Weibull slope and σT63, including a criterion for the general applicability of the sampling-based reconstruction methodology. We have examined why the big-data deconvolution approach cannot be used for BEOL/MOL dielectrics with multiple variability sources. The sampling-number dependence of reconstructed T63 fundamentally nullifies the feasibility of this approach while sampling-number dependence of area scaling should be always demonstrated prior to the use this methodology. Finally, we show that VBD results can provide misleading conclusions due to the different scaling property of variance in Vbd and Tbd in use of reconstruction methodology.","PeriodicalId":172129,"journal":{"name":"2016 IEEE International Reliability Physics Symposium (IRPS)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125384826","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Electromigration failure of circuit interconnects 电路互连电迁移失效
2016 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2016-04-17 DOI: 10.1109/IRPS.2016.7574548
M. Lin, A. Oates
{"title":"Electromigration failure of circuit interconnects","authors":"M. Lin, A. Oates","doi":"10.1109/IRPS.2016.7574548","DOIUrl":"https://doi.org/10.1109/IRPS.2016.7574548","url":null,"abstract":"We show that analysis of steady-state stress is required to accurately predict the location of electromigration vulnerabilities in multi-segment conductors. Electromigration voids form at regions of maximum stress, and these do not necessarily coincide with the highest current density regions. Failure time distributions of circuit-like interconnects are predicted by incorporating the effect of stress on critical current densities. Conventional current density analysis is generally inaccurate in identifying locations of electromigration damage and predictions of failure time.","PeriodicalId":172129,"journal":{"name":"2016 IEEE International Reliability Physics Symposium (IRPS)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126813083","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Estimation of single-event transient pulse characteristics for predictive analysis 用于预测分析的单事件瞬态脉冲特性估计
2016 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2016-04-17 DOI: 10.1109/IRPS.2016.7574641
T. Assis, J. Kauppila, B. Bhuva, peixiong zhao, L. Massengill, R. Wong, S. Wen
{"title":"Estimation of single-event transient pulse characteristics for predictive analysis","authors":"T. Assis, J. Kauppila, B. Bhuva, peixiong zhao, L. Massengill, R. Wong, S. Wen","doi":"10.1109/IRPS.2016.7574641","DOIUrl":"https://doi.org/10.1109/IRPS.2016.7574641","url":null,"abstract":"In this paper a methodology to predict single-event transient (SET) pulse characteristics is proposed. Analytical models and technology pre-characterization are used to estimate SET pulse-widths for different standard cells. The model uses graph analysis of the cell netlist to identify similar circuit structures for reduced computational complexity for the characterization of standard cells. The error between the proposed model and simulations is between 3% and 9.3%. Model predictions are also compared with results from heavy-ion experiments for a test chip fabricated at the 65-nm technology node showing excellent agreement. The proposed model will allow designers to model effects of soft errors at the circuit-level during the design phase.","PeriodicalId":172129,"journal":{"name":"2016 IEEE International Reliability Physics Symposium (IRPS)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121228207","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
New insights on the ESD behavior and failure mechanism of multi wall CNTs 多壁碳纳米管的静电放电行为和失效机制的新见解
2016 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2016-04-17 DOI: 10.1109/IRPS.2016.7574609
A. Mishra, M. Shrivastava
{"title":"New insights on the ESD behavior and failure mechanism of multi wall CNTs","authors":"A. Mishra, M. Shrivastava","doi":"10.1109/IRPS.2016.7574609","DOIUrl":"https://doi.org/10.1109/IRPS.2016.7574609","url":null,"abstract":"In this work, for the first time we experimentally determine ESD behavior of individual shells of both single and bundles of MWCNTs. Distinct electrothermal transport, under ESD conditions, through inner and outer shells of MWCNT is explored. ESD time scale current annealing behavior of outer and inner shells was discovered, which is unique to MWCNTs. Shells - by - shell failure was confirmed to be the universal failure mode of MWCNTs. Failure behaviors of suspended and collapsed (tubes resting on dielectric surface) tubes in single and bundled configuration are discussed.","PeriodicalId":172129,"journal":{"name":"2016 IEEE International Reliability Physics Symposium (IRPS)","volume":"224 4","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134289393","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Budget-based reliability management to handle impact of thermal issues in 16nm technology 基于预算的可靠性管理，以处理16nm技术中热问题的影响
2016 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2016-04-17 DOI: 10.1109/IRPS.2016.7574538
Jae-Gyung Ahn, J. Cooksey, Nitin Navale, Nick Lo, Ping-Chin Yeh, Jonathan Chang
{"title":"Budget-based reliability management to handle impact of thermal issues in 16nm technology","authors":"Jae-Gyung Ahn, J. Cooksey, Nitin Navale, Nick Lo, Ping-Chin Yeh, Jonathan Chang","doi":"10.1109/IRPS.2016.7574538","DOIUrl":"https://doi.org/10.1109/IRPS.2016.7574538","url":null,"abstract":"We handle the thermal impact on FEOL and BEOL reliability by using new aging simulation flow and EM checking flow which is considering thermal coupling effects from both FinFET SHE and metal wire JHE. We demonstrated how the budget-based reliability checking flow works with thermal issues and showed that it checks product risk more rigorously and less conservatively. It results in providing more freedom to circuit designers by allowing higher temperature increase and thus helping them to achieve high performance circuit.","PeriodicalId":172129,"journal":{"name":"2016 IEEE International Reliability Physics Symposium (IRPS)","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134107268","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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