2016 IEEE International Reliability Physics Symposium (IRPS)最新文献_第10页

Mismatch circuit aging modeling and simulations for robust product design and pre-/post-silicon verification 失配电路老化建模和仿真稳健的产品设计和前后硅验证

2016 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2016-04-17 DOI: 10.1109/IRPS.2016.7574591

H. Shim, Yoohwan Kim, J. Jeon, Y. Cho, Jongwoo Park, S. Pae, Haebum Lee

引用次数: 0

New methodology for on-chip RF reliability assessment 片上射频可靠性评估的新方法

2016 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2016-04-17 DOI: 10.1109/IRPS.2016.7574541

L. Heis, Andreas Lachmann, R. Schwab, G. Panagopoulos, Peter Baumgartner, Mamatha Yakkegondi Virupakshappaa, D. Schmitt-Landsiedel

引用次数: 5

Impact of wafer thinning on front-end reliability for 3D integration 晶圆减薄对3D集成前端可靠性的影响

2016 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2016-04-17 DOI: 10.1109/IRPS.2016.7574562

A. Chasin, M. Scholz, W. Guo, J. Franco, G. Potoms, A. Jourdain, D. Linten, G. van der Plas, P. Absil, E. Beyne

引用次数: 6

Machine learning-based proactive data retention error screening in 1Xnm TLC NAND flash 1Xnm TLC NAND闪存中基于机器学习的主动数据保留错误筛选

2016 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2016-04-17 DOI: 10.1109/IRPS.2016.7574632

Y. Nakamura, T. Iwasaki, K. Takeuchi

引用次数: 11

Negative-bias temperature instability of GaN MOSFETs GaN mosfet负偏置温度不稳定性

2016 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2016-04-17 DOI: 10.1109/IRPS.2016.7574526

A. Guo, J. D. del Alamo

引用次数: 36

Reliability of single-layer MoS2 field-effect transistors with SiO2 and hBN gate insulators 采用SiO2和hBN栅极绝缘子的单层MoS2场效应晶体管的可靠性

2016 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2016-04-17 DOI: 10.1109/IRPS.2016.7574543

Y. Illarionov, M. Waltl, M. Furchi, T. Mueller, T. Grasser

引用次数: 2

Optimizing Cu barrier thickness for interconnects performance, reliability and yield 优化铜垒厚度，提高互连性能、可靠性和成品率

2016 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2016-04-17 DOI: 10.1109/IRPS.2016.7574614

T. Shen, B. Rajagopalan, M. Silvestre, E. Ramanathan, A. S. Mahalingam, Wenyi Zhang, K. Yeap, P. Justison

引用次数: 1

New breakdown mechanism investigation: Barrier metal penetration induced soft breakdown in low-k dielectrics 新的击穿机制研究:低k介电介质中阻挡金属穿透诱导软击穿

2016 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2016-04-17 DOI: 10.1109/IRPS.2016.7574511

C. Wu, Y. Li, J. Bommels, I. De Wolf, Z. Tokei, K. Croes

{"title":"New breakdown mechanism investigation: Barrier metal penetration induced soft breakdown in low-k dielectrics","authors":"C. Wu, Y. Li, J. Bommels, I. De Wolf, Z. Tokei, K. Croes","doi":"10.1109/IRPS.2016.7574511","DOIUrl":"https://doi.org/10.1109/IRPS.2016.7574511","url":null,"abstract":"A Soft Breakdown (SBD) phenomenon happening in porous low-k dielectrics during time dependent dielectric breakdown measurements was investigated. The early formation of local conductive paths was identified by monitoring leakage currents and capacitance data in the SBD phase. The nature of this conductive path was demonstrated to be related to intrinsic dielectric degradation. By comparing samples with different process conditions, we found that barrier metal penetration is an important root cause of SBD initiation. Our study of the voltage and temperature acceleration of the SBD phenomenon shows that these acceleration factors, m=22 and Ea=0.2eV, are at a reasonable level. However, further investigations on large size devices illustrate that the difference in barrier metal penetration depth between different samples could lead to a large decrease of Weibull slopes and degrade the overall reliability performance. Therefore, innovations of metal barrier deposition on porous low-k dielectrics to avoid barrier metal penetration are required for advanced technology nodes.","PeriodicalId":172129,"journal":{"name":"2016 IEEE International Reliability Physics Symposium (IRPS)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117166658","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 6

Progressive breakdown in high-voltage GaN MIS-HEMTs 高压GaN miss - hemt的渐进击穿

2016 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2016-04-17 DOI: 10.1109/IRPS.2016.7574531

Shireen Warnock, J. D. del Alamo

{"title":"Progressive breakdown in high-voltage GaN MIS-HEMTs","authors":"Shireen Warnock, J. D. del Alamo","doi":"10.1109/IRPS.2016.7574531","DOIUrl":"https://doi.org/10.1109/IRPS.2016.7574531","url":null,"abstract":"We have investigated the time-dependent dielectric breakdown (TDDB) characteristics of high-voltage AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors (MIS-HEMTs). We focus in particular on the phenomenon known as progressive breakdown (PBD), marked by an onset of noise in the gate current IG during forward gate bias stress. We observe classic PBD behavior characterized by a rapid increase of IG noise during stress that takes place soon before hard breakdown (HBD). The onset of PBD also marks a change in the subthreshold characteristics of the transistor: the gate leakage increases above the measurement noise floor in a step-like fashion, with this additional leakage flowing out the source and/or drain terminals. After PBD, the subthreshold IG also shows a power law temperature dependence. The capacitance-voltage characteristics measured both before and after PBD confirm that device degradation does not occur at the AlGaN/GaN interface. All results are consistent with observations in silicon MOSFETs that support the percolation model of defects behind PBD and HBD. This gives hope that proper physical models suitable for lifetime estimation can be developed for TDDB in GaN MIS-HEMTs.","PeriodicalId":172129,"journal":{"name":"2016 IEEE International Reliability Physics Symposium (IRPS)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117225662","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 21

Characterization of self-heating leads to universal scaling of HCI degradation of multi-fin SOI FinFETs 自热特性导致多鳍SOI finfet的HCI退化的普遍缩放

2016 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2016-04-17 DOI: 10.1109/IRPS.2016.7574506

Hai Jiang, S. Shin, Xiaoyan Liu, Xing Zhang, M. Alam

{"title":"Characterization of self-heating leads to universal scaling of HCI degradation of multi-fin SOI FinFETs","authors":"Hai Jiang, S. Shin, Xiaoyan Liu, Xing Zhang, M. Alam","doi":"10.1109/IRPS.2016.7574506","DOIUrl":"https://doi.org/10.1109/IRPS.2016.7574506","url":null,"abstract":"SOI FinFETs and other Gate-all-around (GAA) transistors topologies have excellent 3-D electrostatic control and therefore, have been suggested as potential technology options for sub-14 nm technology nodes. Unfortunately, the narrow gate geometry and reduced gate pitch suppress heat dissipation and increase thermal cross-talk, leading to severe self-heating of these transistors. Self-heating degrades performance and makes the classical reliability theories based on TL~Tsub irrelevant. In this paper, first, we propose a physics-based thermal circuit compact model for multi-fin SOI FinFETs to characterize self-heating and validate the results by AC conductance method. Next, we analyze HCI degradation varying with the number of fin (Nfin), chuck temperature (Tsub) and AC frequency (f). The results show that HCI degradation dependent variables (NFIN, Tsub, f) can be correlated to the lattice temperature (TL = g(NFIN, Tsub, f)) and obey the universal degradation curve (ΔVth(TL) = f(S(TL) × t)). Si-O bond-dispersion model explains the universal curve; therefore, the model can be used for a long term reliability projection with arbitrary combination Nfin, Tsub, f, etc.","PeriodicalId":172129,"journal":{"name":"2016 IEEE International Reliability Physics Symposium (IRPS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133907557","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 31