T. Shen, B. Rajagopalan, M. Silvestre, E. Ramanathan, A. S. Mahalingam, Wenyi Zhang, K. Yeap, P. Justison
{"title":"优化铜垒厚度，提高互连性能、可靠性和成品率","authors":"T. Shen, B. Rajagopalan, M. Silvestre, E. Ramanathan, A. S. Mahalingam, Wenyi Zhang, K. Yeap, P. Justison","doi":"10.1109/IRPS.2016.7574614","DOIUrl":null,"url":null,"abstract":"Cu barrier thickness optimization on our 90nm pitch Vx/Mx layers with porous ULK SiCOH (κ=2.55) was systematically investigated. Both via resistance and intrinsic EM performance favors thinner TaN and Ta films, however, the robustness of the plating requires thicker Ta to improve seed quality that withstand dissolution during plating. Overall, a thin TaN barrier with moderate thick Ta provides the optimum solution for performance, reliability and yield.","PeriodicalId":172129,"journal":{"name":"2016 IEEE International Reliability Physics Symposium (IRPS)","volume":"763 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Optimizing Cu barrier thickness for interconnects performance, reliability and yield\",\"authors\":\"T. Shen, B. Rajagopalan, M. Silvestre, E. Ramanathan, A. S. Mahalingam, Wenyi Zhang, K. Yeap, P. Justison\",\"doi\":\"10.1109/IRPS.2016.7574614\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Cu barrier thickness optimization on our 90nm pitch Vx/Mx layers with porous ULK SiCOH (κ=2.55) was systematically investigated. Both via resistance and intrinsic EM performance favors thinner TaN and Ta films, however, the robustness of the plating requires thicker Ta to improve seed quality that withstand dissolution during plating. Overall, a thin TaN barrier with moderate thick Ta provides the optimum solution for performance, reliability and yield.\",\"PeriodicalId\":172129,\"journal\":{\"name\":\"2016 IEEE International Reliability Physics Symposium (IRPS)\",\"volume\":\"763 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-04-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE International Reliability Physics Symposium (IRPS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.2016.7574614\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Reliability Physics Symposium (IRPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.2016.7574614","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Optimizing Cu barrier thickness for interconnects performance, reliability and yield
Cu barrier thickness optimization on our 90nm pitch Vx/Mx layers with porous ULK SiCOH (κ=2.55) was systematically investigated. Both via resistance and intrinsic EM performance favors thinner TaN and Ta films, however, the robustness of the plating requires thicker Ta to improve seed quality that withstand dissolution during plating. Overall, a thin TaN barrier with moderate thick Ta provides the optimum solution for performance, reliability and yield.
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