Y. Illarionov, M. Waltl, M. Furchi, T. Mueller, T. Grasser
{"title":"采用SiO2和hBN栅极绝缘子的单层MoS2场效应晶体管的可靠性","authors":"Y. Illarionov, M. Waltl, M. Furchi, T. Mueller, T. Grasser","doi":"10.1109/IRPS.2016.7574543","DOIUrl":null,"url":null,"abstract":"We study the hysteresis and bias-temperature instabilities in single-layer MoS2 FETs with SiO2 and hBN gate insulators and attempt to capture the correlation between these phenomena. In agreement with previous literature reports, our results show that the use of hBN as a gate insulator reduces the hysteresis. Furthermore, we show that the impact of the bias-temperature instabilities is weaker for MoS2/hBN transistors. However, at higher temperature the reliability of MoS2/hBN FETs is reduced due to thermally activated charge trapping.","PeriodicalId":172129,"journal":{"name":"2016 IEEE International Reliability Physics Symposium (IRPS)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Reliability of single-layer MoS2 field-effect transistors with SiO2 and hBN gate insulators\",\"authors\":\"Y. Illarionov, M. Waltl, M. Furchi, T. Mueller, T. Grasser\",\"doi\":\"10.1109/IRPS.2016.7574543\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We study the hysteresis and bias-temperature instabilities in single-layer MoS2 FETs with SiO2 and hBN gate insulators and attempt to capture the correlation between these phenomena. In agreement with previous literature reports, our results show that the use of hBN as a gate insulator reduces the hysteresis. Furthermore, we show that the impact of the bias-temperature instabilities is weaker for MoS2/hBN transistors. However, at higher temperature the reliability of MoS2/hBN FETs is reduced due to thermally activated charge trapping.\",\"PeriodicalId\":172129,\"journal\":{\"name\":\"2016 IEEE International Reliability Physics Symposium (IRPS)\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-04-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE International Reliability Physics Symposium (IRPS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.2016.7574543\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Reliability Physics Symposium (IRPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.2016.7574543","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Reliability of single-layer MoS2 field-effect transistors with SiO2 and hBN gate insulators
We study the hysteresis and bias-temperature instabilities in single-layer MoS2 FETs with SiO2 and hBN gate insulators and attempt to capture the correlation between these phenomena. In agreement with previous literature reports, our results show that the use of hBN as a gate insulator reduces the hysteresis. Furthermore, we show that the impact of the bias-temperature instabilities is weaker for MoS2/hBN transistors. However, at higher temperature the reliability of MoS2/hBN FETs is reduced due to thermally activated charge trapping.
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