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2016 IEEE International Reliability Physics Symposium (IRPS)最新文献

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Potential induced degradation in high-efficiency bifacial solar cells 高效双面太阳能电池的潜在诱导降解
2016 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2016-04-17 DOI: 10.1109/IRPS.2016.7574634
M. Barbato, M. Meneghini, A. Cester, A. Barbato, G. Meneghesso, G. Tavernaro, M. Rossetto
{"title":"Potential induced degradation in high-efficiency bifacial solar cells","authors":"M. Barbato, M. Meneghini, A. Cester, A. Barbato, G. Meneghesso, G. Tavernaro, M. Rossetto","doi":"10.1109/IRPS.2016.7574634","DOIUrl":"https://doi.org/10.1109/IRPS.2016.7574634","url":null,"abstract":"This paper presents an analysis of the degradation of n-type Bifacial Solar Cells submitted to potential induced degradation (PID) stress. PID is one of the main causes of performance degradation during the operating life of a solar cell and the study of the degradation kinetics is fundamental to prevent the excessive deterioration of the conversion efficiency. We report the results obtained on cells with two different encapsulation materials: ethylene-vinyl-acetate (EVA) and polyolefin elastomer (POE). Results show that the use of different encapsulation materials may result in a better robustness towards PID in Bifacial Solar Cells.","PeriodicalId":172129,"journal":{"name":"2016 IEEE International Reliability Physics Symposium (IRPS)","volume":" 7","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114103918","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Resolution of poly gate to substrate contact short reliability failures on non-volatile memory 非易失性存储器中多栅极与衬底接触短可靠性故障的解决
2016 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2016-04-17 DOI: 10.1109/IRPS.2016.7574628
S. Chandrasekaran, P. Jowett, Tarun Mishra, Carl Shafer, R. Cruz, K. Noronha, Siddhesh Bhosle, Venkateshwara Reddy Sanivarapu, N. Rangaraju, Divesh Kapoor
{"title":"Resolution of poly gate to substrate contact short reliability failures on non-volatile memory","authors":"S. Chandrasekaran, P. Jowett, Tarun Mishra, Carl Shafer, R. Cruz, K. Noronha, Siddhesh Bhosle, Venkateshwara Reddy Sanivarapu, N. Rangaraju, Divesh Kapoor","doi":"10.1109/IRPS.2016.7574628","DOIUrl":"https://doi.org/10.1109/IRPS.2016.7574628","url":null,"abstract":"Due to continual scaling of CMOS device dimensions, the dielectric spacing between poly gate (PG) and contact to substrate (Con) has been drastically reduced. This reduction in gate to substrate contact spacing has challenged the dielectric breakdown between poly gate and substrate contact. Several studies involving the breakdown of dielectric between gate and substrate contact have been reported in the past. In this paper, we report the elimination of poly gate to substrate contact shorts on 90 nm Non-Volatile Memory technology with the help of process optimizations in pre-metal dielectric stack. This led to a significant improvement in wafer level reliability metric to the tune of ~1.7X.","PeriodicalId":172129,"journal":{"name":"2016 IEEE International Reliability Physics Symposium (IRPS)","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122638600","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Impact of trap creation at SiO2/Poly-Si interface on ultra-thin SiO2 reliability SiO2/Poly-Si界面陷阱形成对超薄SiO2可靠性的影响
2016 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2016-04-17 DOI: 10.1109/IRPS.2016.7574595
Y. Mitani, M. Suzuki, Y. Higashi, R. Takaishi
{"title":"Impact of trap creation at SiO2/Poly-Si interface on ultra-thin SiO2 reliability","authors":"Y. Mitani, M. Suzuki, Y. Higashi, R. Takaishi","doi":"10.1109/IRPS.2016.7574595","DOIUrl":"https://doi.org/10.1109/IRPS.2016.7574595","url":null,"abstract":"The relationship between TDDB characteristics of the devices having ultrathin SiO2 as gate dielectrics and the hydrogen-related trap creation have been re-investigated from the viewpoint of the oxidation process dependence. In order to study the influence of hydrogen on the reliability, deuterium isotope effect has been used. As a result, the Weibull distributions of time-to-breakdown (tBD) depends on the oxidation process condition even under the same oxidation temperature. Trap creation at gate oxide interface strongly correlates to the dielectric breakdown in ultra-thin gate oxides However, this oxidation process dependence could not be explained only by the amount of hydrogen release from SiO2/Si substrate interface From the experimental results of low-voltage SILC, it can be concluded that not only the released hydrogen from SiO2/Si substrate interface but also those from Poly-Si/SiO2 interface correlates to the breakdown mechanisms.","PeriodicalId":172129,"journal":{"name":"2016 IEEE International Reliability Physics Symposium (IRPS)","volume":"237 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127049218","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
System-level error correction by read-disturb error model of 1Xnm TLC NAND Flash memory for read-intensive enterprise solid-state drives (SSDs) 基于读干扰误差模型的1Xnm TLC NAND闪存系统级纠错
2016 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2016-04-17 DOI: 10.1109/IRPS.2016.7574622
Yoshiaki Deguchi, Tsukasa Tokutomi, K. Takeuchi
{"title":"System-level error correction by read-disturb error model of 1Xnm TLC NAND Flash memory for read-intensive enterprise solid-state drives (SSDs)","authors":"Yoshiaki Deguchi, Tsukasa Tokutomi, K. Takeuchi","doi":"10.1109/IRPS.2016.7574622","DOIUrl":"https://doi.org/10.1109/IRPS.2016.7574622","url":null,"abstract":"Read-disturb Modeled LDPC (RDM-LDPC) ECC is proposed. Conventional Advanced Error-Prediction LDPC (AEP-LDPC) [1] corrects data-retention errors of data-storage-purpose SSDs storing photos, movies, etc. but cannot correct read-disturb errors. For read-intensive computing-purpose enterprise SSDs, this paper analyzes the read-disturb errors, develops the error model of 1Xnm TLC NAND Flash memory and proposes ECC suitable for read-disturb errors. It is experimentally demonstrated that proposed RDM-LDPC extends the read cycle of SSDs by 5000-times.","PeriodicalId":172129,"journal":{"name":"2016 IEEE International Reliability Physics Symposium (IRPS)","volume":"97 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124070110","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Effects of current stress and thermal storage on polymeric heterojunction P3HT:PCBM solar cell 电流应力和蓄热对P3HT:PCBM太阳能电池性能的影响
2016 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2016-04-17 DOI: 10.1109/IRPS.2016.7574523
A. Rizzo, A. Cester, L. Torto, M. Barbato, N. Wrachien, Nicolò Lago, Michael Corazza, F. Krebs, S. Gevorgyan
{"title":"Effects of current stress and thermal storage on polymeric heterojunction P3HT:PCBM solar cell","authors":"A. Rizzo, A. Cester, L. Torto, M. Barbato, N. Wrachien, Nicolò Lago, Michael Corazza, F. Krebs, S. Gevorgyan","doi":"10.1109/IRPS.2016.7574523","DOIUrl":"https://doi.org/10.1109/IRPS.2016.7574523","url":null,"abstract":"We subjected P3HT:PCBM solar cells to electrical constant current stress and thermal storage. We employed the impedance spectroscopy technique combined to conventional DC measurements for device characterization during all stresses. We identified and separated different contributions affecting the open circuit voltage and short circuit current. Several mechanisms are behind these changes during the stresses; in particular, we underlined the exciton recombination rate and the variation of the built-in voltage.","PeriodicalId":172129,"journal":{"name":"2016 IEEE International Reliability Physics Symposium (IRPS)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128591010","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Dynamical observation of H-induced gate dielectric degradation through improved nuclear reaction analysis system 改进核反应分析系统对h诱导栅极介质降解的动力学观察
2016 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2016-04-17 DOI: 10.1109/IRPS.2016.7574578
Y. Higashi, R. Takaishi, Masamichi Suzuki, Y. Nakasaki, M. Tomita, Y. Mitani, M. Matsumoto, Koichi Kato, S. Ogura, K. Fukutani
{"title":"Dynamical observation of H-induced gate dielectric degradation through improved nuclear reaction analysis system","authors":"Y. Higashi, R. Takaishi, Masamichi Suzuki, Y. Nakasaki, M. Tomita, Y. Mitani, M. Matsumoto, Koichi Kato, S. Ogura, K. Fukutani","doi":"10.1109/IRPS.2016.7574578","DOIUrl":"https://doi.org/10.1109/IRPS.2016.7574578","url":null,"abstract":"The Nuclear Reaction Analysis (NRA) system was successfully improved in terms of the control of dynamic hydrogen migration and reducing background noise. The proposed new system achieved nondestructive measurements of the hydrogen depth profile with a detection limit of less than 3×1019 atom/cm3. Secondary Ion Mass Spectrometry (SIMS) and NRA with this system were compared in the analysis of the hydrogen depth profile in gate dielectric for the first time and superiority of NRA was demonstrated. In addition, we successfully demonstrated that dynamic hydrogen migration in gate dielectric is strongly correlated with generation of both bulk defects and interface defects of gate dielectrics.","PeriodicalId":172129,"journal":{"name":"2016 IEEE International Reliability Physics Symposium (IRPS)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133041811","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Investigation of logic circuit soft error rate (SER) in 14nm FinFET technology 14nm FinFET技术中逻辑电路软错误率的研究
2016 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2016-04-17 DOI: 10.1109/IRPS.2016.7574519
T. Uemura, Soonyoung Lee, Jongwoo Park, S. Pae, Haebum Lee
{"title":"Investigation of logic circuit soft error rate (SER) in 14nm FinFET technology","authors":"T. Uemura, Soonyoung Lee, Jongwoo Park, S. Pae, Haebum Lee","doi":"10.1109/IRPS.2016.7574519","DOIUrl":"https://doi.org/10.1109/IRPS.2016.7574519","url":null,"abstract":"This paper presents characterization results of soft error rate (SER) on logic circuits manufactured with 14 nm High-k/metal gate bulk FinFET technology. The FinFET SER advantage seen on SRAM was also validated on logic circuits (5-10X improvement). Alpha irradiation results reveal that charge collection only on NMOS on low critical charge can contribute to SEU. Adding NMOS on low critical charge can increase error rate, yet it can be easily mitigated by the design change. Design schemes for low-power has little impact to the SER. Single event transient on clock-line in 14 nm FinFET was substantially improved from planer-MOS.","PeriodicalId":172129,"journal":{"name":"2016 IEEE International Reliability Physics Symposium (IRPS)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133334161","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
A finite element method study of delamination at the interface of the TSV interconnects 采用有限元方法研究TSV互连界面的分层
2016 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2016-04-17 DOI: 10.1109/IRPS.2016.7574626
Santo Papaleo, H. Ceric
{"title":"A finite element method study of delamination at the interface of the TSV interconnects","authors":"Santo Papaleo, H. Ceric","doi":"10.1109/IRPS.2016.7574626","DOIUrl":"https://doi.org/10.1109/IRPS.2016.7574626","url":null,"abstract":"Through Silicon Vias (TSVs) are the interconnections in three dimensional integrated circuits responsible for the vertical lines inside the dies. In particular, the open TSV has been developed in order to reduce thermo-mechanical issues. This interconnect structure has interfaces where the possibility of a device failure due to delamination needs to be considered. The Critical Energy Release Rate Gc determines the condition for a fracture to propagate. When the Energy Release Rate G exceeds Gc, a fracture will propagate. Experimental measurements were used to calculate Gc. The experimental Gc, was calculated at the interface between silicon dioxide and tungsten; materials used for Open TSVs. We have developed a model to calculate the G and compared the experimental data with our results. The results obtained are in good agreement with experimental measurements. Therefore, the model developed provides a convenient tool for the study of delamination issues in TSVs.","PeriodicalId":172129,"journal":{"name":"2016 IEEE International Reliability Physics Symposium (IRPS)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122395821","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Correlation between dynamic Rdsou transients and Carbon related buffer traps in AlGaN/GaN HEMTs AlGaN/GaN hemt中动态Rdsou瞬态与碳相关缓冲陷阱的相关性
2016 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2016-04-17 DOI: 10.1109/IRPS.2016.7574586
F. Iucolano, A. Parisi, Santo Reina, A. Patti, S. Coffa, G. Meneghesso, G. Verzellesi, F. Fantini, A. Chini
{"title":"Correlation between dynamic Rdsou transients and Carbon related buffer traps in AlGaN/GaN HEMTs","authors":"F. Iucolano, A. Parisi, Santo Reina, A. Patti, S. Coffa, G. Meneghesso, G. Verzellesi, F. Fantini, A. Chini","doi":"10.1109/IRPS.2016.7574586","DOIUrl":"https://doi.org/10.1109/IRPS.2016.7574586","url":null,"abstract":"The on resistance increment observed when the device is operated at high drain-source voltages is one the topics that limits the performance of the AlGaN/GaN HEMT devices. In this paper, the physical mechanisms responsible of the RDSon degradation are investigated. The dynamic RDSon transient method is used in order to get insight to characterize the traps states. By calculating the Arrhenius plot associated with the RDSon transients an activation energy of 0.86eV was extracted, that can be correlated to the traps due to the incorporation of Carbon inside the buffer. This hypothesis was further supported by the analyses performed on a simpler structure (TLM). By applying a negative substrate bias the effect of only the buffer traps was studied. A fairly close value of the activation energy (0.9eV) to the one extracted when analyzing the RDSon transient was obtained.","PeriodicalId":172129,"journal":{"name":"2016 IEEE International Reliability Physics Symposium (IRPS)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129028990","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
A new aspect of time-dependent clustering model for non-uniform dielectric TDDB 非均匀介质TDDB时变聚类模型的一个新方面
2016 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2016-04-17 DOI: 10.1109/IRPS.2016.7574513
T. Shimizu, N. Suzumura, K. Ohgata, H. Tsuchiya, H. Aono, M. Ogasawara
{"title":"A new aspect of time-dependent clustering model for non-uniform dielectric TDDB","authors":"T. Shimizu, N. Suzumura, K. Ohgata, H. Tsuchiya, H. Aono, M. Ogasawara","doi":"10.1109/IRPS.2016.7574513","DOIUrl":"https://doi.org/10.1109/IRPS.2016.7574513","url":null,"abstract":"We investigated the time-dependent clustering (TDC) model for time-dependent dielectric breakdown (TDDB) of non-uniform dielectrics and revealed for the first time that the TDC model is a compound Weibull model that is expressed as a superposition of Weibull distributions. The Weibull model has two statistical parameters, scale parameter η and shape parameter β We clarified the precondition that the TDC model holds when term ηβ of the Weibull model is distributed according to an inverse-gamma distribution. By using our finding, we proposed a new method to directly estimate the variations of electric field and effective space from TDDB data. We found that the corresponding electric field distribution is a generalization of extreme value distribution, which is a natural consequence since the lifetime is determined by the maximum value of the electric field.","PeriodicalId":172129,"journal":{"name":"2016 IEEE International Reliability Physics Symposium (IRPS)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123293981","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
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