A finite element method study of delamination at the interface of the TSV interconnects

Abstract

Through Silicon Vias (TSVs) are the interconnections in three dimensional integrated circuits responsible for the vertical lines inside the dies. In particular, the open TSV has been developed in order to reduce thermo-mechanical issues. This interconnect structure has interfaces where the possibility of a device failure due to delamination needs to be considered. The Critical Energy Release Rate Gc determines the condition for a fracture to propagate. When the Energy Release Rate G exceeds Gc, a fracture will propagate. Experimental measurements were used to calculate Gc. The experimental Gc, was calculated at the interface between silicon dioxide and tungsten; materials used for Open TSVs. We have developed a model to calculate the G and compared the experimental data with our results. The results obtained are in good agreement with experimental measurements. Therefore, the model developed provides a convenient tool for the study of delamination issues in TSVs.