改进核反应分析系统对h诱导栅极介质降解的动力学观察

2016 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2016-04-17 DOI:10.1109/IRPS.2016.7574578

Y. Higashi, R. Takaishi, Masamichi Suzuki, Y. Nakasaki, M. Tomita, Y. Mitani, M. Matsumoto, Koichi Kato, S. Ogura, K. Fukutani

{"title":"改进核反应分析系统对h诱导栅极介质降解的动力学观察","authors":"Y. Higashi, R. Takaishi, Masamichi Suzuki, Y. Nakasaki, M. Tomita, Y. Mitani, M. Matsumoto, Koichi Kato, S. Ogura, K. Fukutani","doi":"10.1109/IRPS.2016.7574578","DOIUrl":null,"url":null,"abstract":"The Nuclear Reaction Analysis (NRA) system was successfully improved in terms of the control of dynamic hydrogen migration and reducing background noise. The proposed new system achieved nondestructive measurements of the hydrogen depth profile with a detection limit of less than 3×1019 atom/cm3. Secondary Ion Mass Spectrometry (SIMS) and NRA with this system were compared in the analysis of the hydrogen depth profile in gate dielectric for the first time and superiority of NRA was demonstrated. In addition, we successfully demonstrated that dynamic hydrogen migration in gate dielectric is strongly correlated with generation of both bulk defects and interface defects of gate dielectrics.","PeriodicalId":172129,"journal":{"name":"2016 IEEE International Reliability Physics Symposium (IRPS)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Dynamical observation of H-induced gate dielectric degradation through improved nuclear reaction analysis system\",\"authors\":\"Y. Higashi, R. Takaishi, Masamichi Suzuki, Y. Nakasaki, M. Tomita, Y. Mitani, M. Matsumoto, Koichi Kato, S. Ogura, K. Fukutani\",\"doi\":\"10.1109/IRPS.2016.7574578\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The Nuclear Reaction Analysis (NRA) system was successfully improved in terms of the control of dynamic hydrogen migration and reducing background noise. The proposed new system achieved nondestructive measurements of the hydrogen depth profile with a detection limit of less than 3×1019 atom/cm3. Secondary Ion Mass Spectrometry (SIMS) and NRA with this system were compared in the analysis of the hydrogen depth profile in gate dielectric for the first time and superiority of NRA was demonstrated. In addition, we successfully demonstrated that dynamic hydrogen migration in gate dielectric is strongly correlated with generation of both bulk defects and interface defects of gate dielectrics.\",\"PeriodicalId\":172129,\"journal\":{\"name\":\"2016 IEEE International Reliability Physics Symposium (IRPS)\",\"volume\":\"48 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-04-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE International Reliability Physics Symposium (IRPS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.2016.7574578\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Reliability Physics Symposium (IRPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.2016.7574578","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

对核反应分析(NRA)系统在控制氢的动态迁移和降低背景噪声方面进行了改进。提出的新系统实现了氢深度剖面的无损测量，检测限小于3×1019原子/cm3。首次比较了二次离子质谱法(SIMS)和NRA系统在栅极介质中氢深度分布的分析，证明了NRA系统的优越性。此外，我们成功地证明了氢在栅极介质中的动态迁移与栅极介质的体缺陷和界面缺陷的产生密切相关。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Dynamical observation of H-induced gate dielectric degradation through improved nuclear reaction analysis system

The Nuclear Reaction Analysis (NRA) system was successfully improved in terms of the control of dynamic hydrogen migration and reducing background noise. The proposed new system achieved nondestructive measurements of the hydrogen depth profile with a detection limit of less than 3×1019 atom/cm3. Secondary Ion Mass Spectrometry (SIMS) and NRA with this system were compared in the analysis of the hydrogen depth profile in gate dielectric for the first time and superiority of NRA was demonstrated. In addition, we successfully demonstrated that dynamic hydrogen migration in gate dielectric is strongly correlated with generation of both bulk defects and interface defects of gate dielectrics.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2016 IEEE International Reliability Physics Symposium (IRPS)

自引率

0.00%

发文量