{"title":"基于读干扰误差模型的1Xnm TLC NAND闪存系统级纠错","authors":"Yoshiaki Deguchi, Tsukasa Tokutomi, K. Takeuchi","doi":"10.1109/IRPS.2016.7574622","DOIUrl":null,"url":null,"abstract":"Read-disturb Modeled LDPC (RDM-LDPC) ECC is proposed. Conventional Advanced Error-Prediction LDPC (AEP-LDPC) [1] corrects data-retention errors of data-storage-purpose SSDs storing photos, movies, etc. but cannot correct read-disturb errors. For read-intensive computing-purpose enterprise SSDs, this paper analyzes the read-disturb errors, develops the error model of 1Xnm TLC NAND Flash memory and proposes ECC suitable for read-disturb errors. It is experimentally demonstrated that proposed RDM-LDPC extends the read cycle of SSDs by 5000-times.","PeriodicalId":172129,"journal":{"name":"2016 IEEE International Reliability Physics Symposium (IRPS)","volume":"97 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"System-level error correction by read-disturb error model of 1Xnm TLC NAND Flash memory for read-intensive enterprise solid-state drives (SSDs)\",\"authors\":\"Yoshiaki Deguchi, Tsukasa Tokutomi, K. Takeuchi\",\"doi\":\"10.1109/IRPS.2016.7574622\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Read-disturb Modeled LDPC (RDM-LDPC) ECC is proposed. Conventional Advanced Error-Prediction LDPC (AEP-LDPC) [1] corrects data-retention errors of data-storage-purpose SSDs storing photos, movies, etc. but cannot correct read-disturb errors. For read-intensive computing-purpose enterprise SSDs, this paper analyzes the read-disturb errors, develops the error model of 1Xnm TLC NAND Flash memory and proposes ECC suitable for read-disturb errors. It is experimentally demonstrated that proposed RDM-LDPC extends the read cycle of SSDs by 5000-times.\",\"PeriodicalId\":172129,\"journal\":{\"name\":\"2016 IEEE International Reliability Physics Symposium (IRPS)\",\"volume\":\"97 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-04-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE International Reliability Physics Symposium (IRPS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.2016.7574622\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Reliability Physics Symposium (IRPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.2016.7574622","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
System-level error correction by read-disturb error model of 1Xnm TLC NAND Flash memory for read-intensive enterprise solid-state drives (SSDs)
Read-disturb Modeled LDPC (RDM-LDPC) ECC is proposed. Conventional Advanced Error-Prediction LDPC (AEP-LDPC) [1] corrects data-retention errors of data-storage-purpose SSDs storing photos, movies, etc. but cannot correct read-disturb errors. For read-intensive computing-purpose enterprise SSDs, this paper analyzes the read-disturb errors, develops the error model of 1Xnm TLC NAND Flash memory and proposes ECC suitable for read-disturb errors. It is experimentally demonstrated that proposed RDM-LDPC extends the read cycle of SSDs by 5000-times.
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