发布求助
文献互助 智能选刊 最新文献

2016 IEEE International Reliability Physics Symposium (IRPS)最新文献

筛选
英文 中文
Channel and near channel defects characterization in vertical InxGa1-xAs high mobility channels for future 3D NAND memory 用于未来3D NAND存储器的垂直InxGa1-xAs高迁移率通道的通道和近通道缺陷表征
2016 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2016-04-17 DOI: 10.1109/IRPS.2016.7574570
A. Subirats, E. Capogreco, R. Degraeve, A. Arreghini, G. Van den bosch, D. Linten, J. van Houdt, A. Furnémont
{"title":"Channel and near channel defects characterization in vertical InxGa1-xAs high mobility channels for future 3D NAND memory","authors":"A. Subirats, E. Capogreco, R. Degraeve, A. Arreghini, G. Van den bosch, D. Linten, J. van Houdt, A. Furnémont","doi":"10.1109/IRPS.2016.7574570","DOIUrl":"https://doi.org/10.1109/IRPS.2016.7574570","url":null,"abstract":"In this paper, we present a first characterization of the charge trapping in vertical 3D SONOS with InxGa1-xAs channel using IV hysteresis and RTN measurements. We show that III-V devices have a high density of border traps leading to an important variability of its electrical parameters. Finally, individual trap analysis show that the III-V devices also possess traps in the channel region and their behavior are similar to the one measured in standard silicon technology.","PeriodicalId":172129,"journal":{"name":"2016 IEEE International Reliability Physics Symposium (IRPS)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125670784","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Moisture impact on dielectric reliability in low-k dielectric materials 水分对低k介电材料介电可靠性的影响
2016 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2016-04-17 DOI: 10.1109/IRPS.2016.7574594
Ki-Don Lee, Quan Yuan, Anuj Patel, Z. T. Mai, Logan H. Brown, Steven English
{"title":"Moisture impact on dielectric reliability in low-k dielectric materials","authors":"Ki-Don Lee, Quan Yuan, Anuj Patel, Z. T. Mai, Logan H. Brown, Steven English","doi":"10.1109/IRPS.2016.7574594","DOIUrl":"https://doi.org/10.1109/IRPS.2016.7574594","url":null,"abstract":"Moisture impact on dielectric reliability was investigated with intentional moisture uptake and removal from porous low-k dielectric. In our tests, moisture can reduce TDDB lifetimes by 6 orders, while the kinetics is maintained (for both dry and wet samples). Interestingly, moisture from humid atmosphere does not increase the leakage current, but can reduce TDDB lifetimes significantly. So, the leakage current is not a good index to detect moisture-induced TDDB degradation. TDDB tests with various pre-bake conditions show moisture removal is not linear over bake temperatures, indicating multiple moisture states in low-k dielectric. Moisture diffusion, scaled from our test condition, shows moisture can diffuse few micro-meters in one second into low-k dielectric even at room temperature and impact dielectric reliability. To recover from the moisture damage, we recommend a high bake temperature (300°C~350°C).","PeriodicalId":172129,"journal":{"name":"2016 IEEE International Reliability Physics Symposium (IRPS)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129520443","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Thermal characterization and challenges of advanced interconnects (Invited) 高级互连的热特性和挑战(特邀)
2016 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2016-04-17 DOI: 10.1109/IRPS.2016.7574547
Baozhen Li, A. Kim, C. Christiansen, R. Dufresne, C. Burke, D. Brochu
{"title":"Thermal characterization and challenges of advanced interconnects (Invited)","authors":"Baozhen Li, A. Kim, C. Christiansen, R. Dufresne, C. Burke, D. Brochu","doi":"10.1109/IRPS.2016.7574547","DOIUrl":"https://doi.org/10.1109/IRPS.2016.7574547","url":null,"abstract":"Technology scaling and driving to high performance have led to more joule heating in both devices and interconnects. Since temperature is one of the most sensitive factors impacting interconnect reliability, this paper focuses on the thermal characteristics of metal lines with different geometries and surroundings to accurately assess local temperature of different circuit designs. The experimental results reported can be used as basic input parameters and calibration baseline for thermal model development and simulations.","PeriodicalId":172129,"journal":{"name":"2016 IEEE International Reliability Physics Symposium (IRPS)","volume":"15 4","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133136783","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Transient thermometry and HRTEM analysis of RRAM thermal dynamics during switching and failure 随机存取存储器在开关和故障过程中的热动力学的瞬态测温和HRTEM分析
2016 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2016-04-17 DOI: 10.1109/IRPS.2016.7574579
J. Kwon, Abhishek A. Sharma, Chao-Yang Chen, A. Fantini, M. Jurczak, J. Bain, Y. Picard, M. Skowronski
{"title":"Transient thermometry and HRTEM analysis of RRAM thermal dynamics during switching and failure","authors":"J. Kwon, Abhishek A. Sharma, Chao-Yang Chen, A. Fantini, M. Jurczak, J. Bain, Y. Picard, M. Skowronski","doi":"10.1109/IRPS.2016.7574579","DOIUrl":"https://doi.org/10.1109/IRPS.2016.7574579","url":null,"abstract":"We investigate RRAM thermal dynamics during resistive switching and endurance failure by using transient thermometry and HRTEM analysis. The filament size was estimated to ~1 nm with 7-15 nm crystalline region, having experienced local temperatures of > 1600 K at the filament core and > 850 K in the heat affected zone. The devices that underwent cold switching show no change in the HfAlOx microstructure, post-programming. However, such devices show preferential templated growth of HfAlOx crystallite, extending from the polycrystalline Hf layer after 107 switching cycles, eventually culminating in a RESET failure.","PeriodicalId":172129,"journal":{"name":"2016 IEEE International Reliability Physics Symposium (IRPS)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130037806","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Quantitative model for post-program instabilities in filamentary RRAM 细丝RRAM程序后不稳定性的定量模型
2016 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2016-04-17 DOI: 10.1109/IRPS.2016.7574567
R. Degraeve, A. Fantini, G. Gorine, P. Roussel, S. Clima, C. Y. Chen, B. Govoreanu, L. Goux, D. Linten, M. Jurczak, A. Thean
{"title":"Quantitative model for post-program instabilities in filamentary RRAM","authors":"R. Degraeve, A. Fantini, G. Gorine, P. Roussel, S. Clima, C. Y. Chen, B. Govoreanu, L. Goux, D. Linten, M. Jurczak, A. Thean","doi":"10.1109/IRPS.2016.7574567","DOIUrl":"https://doi.org/10.1109/IRPS.2016.7574567","url":null,"abstract":"This paper discusses and models the program instability observed in filamentary Hf-based RRAM devices in the context of the Hourglass model. It is demonstrated that two variability sources can be distinguished: (i) number variations of the amount of vacancies in the filament constriction and (ii) constriction shape variations. The shape variations are not stable in time and show a log(time)-dependent relaxation behavior after each programming pulse. This makes program/verify schemes, aiming at widening the resistive window, highly ineffective. We develop a quantitative, mathematical description of the instability using an auto-correlated step process of the shape parameters of the QPC conduction model.","PeriodicalId":172129,"journal":{"name":"2016 IEEE International Reliability Physics Symposium (IRPS)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114623688","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Key metrics for the electromigration performance for solder and copper-based package interconnects 焊料和铜基封装互连电迁移性能的关键指标
2016 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2016-04-17 DOI: 10.1109/IRPS.2016.7574565
C. Hau-Riege, Y. Yau, K. Caffey
{"title":"Key metrics for the electromigration performance for solder and copper-based package interconnects","authors":"C. Hau-Riege, Y. Yau, K. Caffey","doi":"10.1109/IRPS.2016.7574565","DOIUrl":"https://doi.org/10.1109/IRPS.2016.7574565","url":null,"abstract":"This paper presents electromigration results over a wide spectrum of far backend interconnects, including microbump, copper pillar, thermal compression flip chip bump, lead free bump and solder ball, in order to rank their performances and identify key metrics for robust electromigration reliability. A compilation of results show two regimes of performance, or current-density-carrying capability, according to the structure's solder-to-Cu ratio. That is, relatively low performance was measured for structures with solder-to-Cu ratios higher than 3 such as solder balls, lead-free bumps, and Cu pillars on narrow trace. Here, to local Cu is consumed by CuSn formation, and voids formed along the interface of the CuSn and solder in the bump or ball, or in the cathode trace connection. Relatively high performance was measured for structures with solder-to-Cu ratios less than 3 such as Cu pillars and TCFC bumps on wider traces or pads as well as microbump. Here, the Cu connection remains intact despite CuSn formation. A steady-state or near steady-state situation develops no EM voids develop and the resistance is stable. The microbump, which had lowest solder-to-Cu ratio, was measured to be immortal since its solder had totally transformed at time zero and subsequent EM testing did not alter it.","PeriodicalId":172129,"journal":{"name":"2016 IEEE International Reliability Physics Symposium (IRPS)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134229587","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Latchup holding voltages and trigger currents in an SOI technology 锁紧保持电压和触发电流在一个SOI技术
2016 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2016-04-17 DOI: 10.1109/IRPS.2016.7574559
Guido Quax, T. Smedes
{"title":"Latchup holding voltages and trigger currents in an SOI technology","authors":"Guido Quax, T. Smedes","doi":"10.1109/IRPS.2016.7574559","DOIUrl":"https://doi.org/10.1109/IRPS.2016.7574559","url":null,"abstract":"This paper investigates holding voltages and trigger currents in a Silicon-on-Insulator technology. These parameters can be used in automated layout checks. Via a new measurement method, where the well-bias of the test structures is varied with regard to the bias of the emitters of the thyristor, a strong dependency on the emitter distance, and a weak dependency on the well tap distance is observed. The holding voltages are compared to a low-Ohmic and high-Ohmic variant of the same technology node. Trigger currents of a layout with a variable well tap length are investigated. A model for the effective resistance is developed, incorporating the increased resistance for longer current paths by segmenting the current flow area. The performance of the model and possible applications are discussed.","PeriodicalId":172129,"journal":{"name":"2016 IEEE International Reliability Physics Symposium (IRPS)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123881674","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Improvement of solar cell performance and reversibility of ageing effects in hydrogenated amorphous silicon solar cells under illumination and electric field stress: Role of TCO and substrate 光照和电场应力下氢化非晶硅太阳能电池性能的改善和老化效应的可逆性:TCO和衬底的作用
2016 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2016-04-17 DOI: 10.1109/IRPS.2016.7574524
A. Scuto, M. Foti, C. Gerardi, A. Battaglia, S. Lombardo
{"title":"Improvement of solar cell performance and reversibility of ageing effects in hydrogenated amorphous silicon solar cells under illumination and electric field stress: Role of TCO and substrate","authors":"A. Scuto, M. Foti, C. Gerardi, A. Battaglia, S. Lombardo","doi":"10.1109/IRPS.2016.7574524","DOIUrl":"https://doi.org/10.1109/IRPS.2016.7574524","url":null,"abstract":"The ageing effects of hydrogenated amorphous Si (a-Si:H) under illumination have been investigated. These are strongly affected by the well-known Staebler-Wronski effect, occurring during light soaking of a-Si:H, producing a substantial loss of cell power conversion efficiency. In this work the light soaking effect was investigated and it was shown that the application of a strong electric field in reverse bias not only slows down the solar cell ageing kinetics but also even produces an improvement of the cells parameters. Such improvements have been investigated discussing the impact of temperature, electric field intensity, illumination level, substrate type and reversibility properties. Further information on the possible improvement causes are provided by the analysis of the behavior of single thin films of doped a-Si:H, and by comparing to the case of micromorph solar cells.","PeriodicalId":172129,"journal":{"name":"2016 IEEE International Reliability Physics Symposium (IRPS)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125214105","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Negative bias temperature instability lifetime prediction: Considering frequency, voltage and activation energy via novel methodology of MSM-SFMF 负偏置温度不稳定寿命预测:考虑频率、电压和活化能的MSM-SFMF新方法
2016 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2016-04-17 DOI: 10.1109/IRPS.2016.7574645
C. Chiang, N. Ke, S. Kuo, C. J. Wang, K. Su
{"title":"Negative bias temperature instability lifetime prediction: Considering frequency, voltage and activation energy via novel methodology of MSM-SFMF","authors":"C. Chiang, N. Ke, S. Kuo, C. J. Wang, K. Su","doi":"10.1109/IRPS.2016.7574645","DOIUrl":"https://doi.org/10.1109/IRPS.2016.7574645","url":null,"abstract":"NBTI is a well-known reliability issue. Therefore, which approach adopted for lifetime assessment becomes very important. Slow measurement overestimate lifetime due to recovery, and fast technique suppress recovery result to obtain less degradation slope. So these two methods cannot give reliable lifetime prediction. This paper discusses a new measuring skill that helps us to realize characteristic of traps via measure frequency and stress frequency. After considering the activation energy (Ea), traps can be divided into three types. It includes simple concept of Reaction-Diffusion (RD) and two-stage models, and doesn't need complicated mathematics operations. Then we can do accurate lifetime assessment through different trap characteristic. Consequently, it benefits the study of transistor NBTI behavior.","PeriodicalId":172129,"journal":{"name":"2016 IEEE International Reliability Physics Symposium (IRPS)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125517562","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigation of trapping effects on AlGaN/GaN HEMT under DC accelerated life testing 直流加速寿命试验下AlGaN/GaN HEMT的捕集效应研究
2016 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2016-04-17 DOI: 10.1109/IRPS.2016.7574587
W. Sun, C. Lee, P. Saunier, S. Ringel, A. Arehart
{"title":"Investigation of trapping effects on AlGaN/GaN HEMT under DC accelerated life testing","authors":"W. Sun, C. Lee, P. Saunier, S. Ringel, A. Arehart","doi":"10.1109/IRPS.2016.7574587","DOIUrl":"https://doi.org/10.1109/IRPS.2016.7574587","url":null,"abstract":"GaN-based high electron mobility transistors (HEMTs) were subjected to DC-based accelerated life testing to determine which defect levels form or are activated, and how they impact the static and dynamic HEMT performance. The primary static changes were a negative shift of the threshold voltage and an increase in knee walkout/on-resistance. The primary dynamic effect of the stressing appeared in the form of a time-dependent increase in the on-resistance, and this was found to correlate to first order with formation and/or activation of traps at Ec-0.57 and Ec-0.72 eV traps that contributed to the dynamic changes, and the Ec-1.5 eV trap was likely responsible for the static change in on-resistance. Trapping kinetics analysis revealed that the physical sources for the EC-0.57 and EC-0.72 eV states are not simple, ideal, non-interacting point defects, but instead are associated with physically extended defects, such as dislocations, and/or defect complexes.","PeriodicalId":172129,"journal":{"name":"2016 IEEE International Reliability Physics Symposium (IRPS)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127304393","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信