Negative bias temperature instability lifetime prediction: Considering frequency, voltage and activation energy via novel methodology of MSM-SFMF

Abstract

NBTI is a well-known reliability issue. Therefore, which approach adopted for lifetime assessment becomes very important. Slow measurement overestimate lifetime due to recovery, and fast technique suppress recovery result to obtain less degradation slope. So these two methods cannot give reliable lifetime prediction. This paper discusses a new measuring skill that helps us to realize characteristic of traps via measure frequency and stress frequency. After considering the activation energy (Ea), traps can be divided into three types. It includes simple concept of Reaction-Diffusion (RD) and two-stage models, and doesn't need complicated mathematics operations. Then we can do accurate lifetime assessment through different trap characteristic. Consequently, it benefits the study of transistor NBTI behavior.