随机存取存储器在开关和故障过程中的热动力学的瞬态测温和HRTEM分析

2016 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2016-04-17 DOI:10.1109/IRPS.2016.7574579

J. Kwon, Abhishek A. Sharma, Chao-Yang Chen, A. Fantini, M. Jurczak, J. Bain, Y. Picard, M. Skowronski

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引用次数: 2

摘要

通过瞬态测温和HRTEM分析，研究了RRAM在电阻开关和持久失效时的热动力学。结果表明，该材料的丝芯温度> 1600 K，热影响区温度> 850 K，丝芯尺寸约为1 nm，结晶区为7-15 nm。经过冷开关的器件在编程后hhfalox微观结构没有变化。然而，在107个开关周期后，这种器件表现出HfAlOx晶体的优先模板生长，从多晶Hf层延伸出来，最终导致RESET失效。

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Transient thermometry and HRTEM analysis of RRAM thermal dynamics during switching and failure

We investigate RRAM thermal dynamics during resistive switching and endurance failure by using transient thermometry and HRTEM analysis. The filament size was estimated to ~1 nm with 7-15 nm crystalline region, having experienced local temperatures of > 1600 K at the filament core and > 850 K in the heat affected zone. The devices that underwent cold switching show no change in the HfAlOx microstructure, post-programming. However, such devices show preferential templated growth of HfAlOx crystallite, extending from the polycrystalline Hf layer after 107 switching cycles, eventually culminating in a RESET failure.

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2016 IEEE International Reliability Physics Symposium (IRPS)

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