Electromigration failure of circuit interconnects

Abstract

We show that analysis of steady-state stress is required to accurately predict the location of electromigration vulnerabilities in multi-segment conductors. Electromigration voids form at regions of maximum stress, and these do not necessarily coincide with the highest current density regions. Failure time distributions of circuit-like interconnects are predicted by incorporating the effect of stress on critical current densities. Conventional current density analysis is generally inaccurate in identifying locations of electromigration damage and predictions of failure time.