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Architectural trade-offs for SiGe BiCMOS direct conversion receiver front-ends for IEEE802.11a IEEE802.11a SiGe BiCMOS直接转换接收器前端的架构权衡
24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu Pub Date : 2002-12-10 DOI: 10.1109/GAAS.2002.1049043
S. Chakraborty, S. Reynolds, T. Beukema, H. Ainspan, J. Laskar
{"title":"Architectural trade-offs for SiGe BiCMOS direct conversion receiver front-ends for IEEE802.11a","authors":"S. Chakraborty, S. Reynolds, T. Beukema, H. Ainspan, J. Laskar","doi":"10.1109/GAAS.2002.1049043","DOIUrl":"https://doi.org/10.1109/GAAS.2002.1049043","url":null,"abstract":"We present two different approaches towards development of direct conversion receiver front-ends for IEEE802.11a applications in IBM's SiGe BiCMOS technology. These approaches include: a) conventional 50 /spl Omega/ system, b) fully monolithic front-end. The developed ICs are targeted for the upper U-NII band at frequency range of 5.725-5.825 GHz and include a low noise amplifier (LNA), two mixers in quadrature, and a frequency divider. All of these circuits use fully on chip implementation. The LNA provides a gain of 11 dB, noise figure of 4.4 dB, IIP3 of -2dBm and occupies an area of 0.7 mm/spl times/0.7 mm. A micromixer topology has been adopted in the case of the 50 /spl Omega/ system and provides 9.2 dB gain, input matching of 16 dB, double sideband noise figure of 19.5 dB, input 1 dB compression point of -3 dBm, IIP3 and IIP2 of +6 and +32 dBm respectively and occupies an area of 1.6 mm/spl times/1 mm. The fully integrated receiver utilizes single-ended Gilbert cell mixers, and occupies a compact area of 1.6 mm/spl times/1.3 mm. It exhibits 20.2 dB gain, input 1 dB compression point (input P1dB) of -15.5 dBm, input matching of 15 dB, IIP3 and IIP2 of -3 dBm and +31 dBm respectively, double sideband noise figure of 7.1 dB, and LO to RF leakage of 78 dB. The LNA draws 5.78 mA from a 2.8 V supply, both micromixers draw 10.3 mA from 3.1 V supply, both Gilbert cell mixers draw 12.71 mA from a 3.75 V supply, and the frequency divider draws 22 mA from a 3.75 V supply.","PeriodicalId":142875,"journal":{"name":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115030500","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
An MMIC smart power amplifier of 21% PAE at 16 dBm power level for W-CDMA mobile communication terminals 一种适用于W-CDMA移动通信终端的16 dBm功率下21% PAE的MMIC智能功率放大器
24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu Pub Date : 2002-12-10 DOI: 10.1109/GAAS.2002.1049055
J.H. Kim, Y. Noh, Y. Kim, S. Kim, C. Park
{"title":"An MMIC smart power amplifier of 21% PAE at 16 dBm power level for W-CDMA mobile communication terminals","authors":"J.H. Kim, Y. Noh, Y. Kim, S. Kim, C. Park","doi":"10.1109/GAAS.2002.1049055","DOIUrl":"https://doi.org/10.1109/GAAS.2002.1049055","url":null,"abstract":"We demonstrate a new MMIC smart power amplifier, which consists of dual chain power amplifiers with a single matching network, the power added efficiency (PAE) of which, for 16 dBm output power, is as much as 21%, which represents more than a factor of three improvement of the PAE while satisfying all W-CDMA specifications. The power amplifier has been devised with two different parallel connected InGaP/GaAs HBT power amplifiers, each amplifier fitted to different a maximum power value: one to 17.5 dBm for low power mode and the other to 28 dBm for high power mode. The low power mode reveals -33 dBc of adjacent channel leakage power ratio (ACLR) at 16 dBm with 14 mA of quiescent current. The high power mode exhibits 40% of PAE and -30 dBc of ACLR at the maximum output power of 28 dBm.","PeriodicalId":142875,"journal":{"name":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","volume":"89 5","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114088878","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Reliability of InGaP emitter HBTs at high collector voltage 高集电极电压下InGaP发射极hbt的可靠性
24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu Pub Date : 2002-12-10 DOI: 10.1109/GAAS.2002.1049032
B. Yeats, M. Bonse, P. Chandler, M. Culver, D. D'Avanzo, G. Essilfie, C. Hutchinson, D. Kuhn, T. Low, T. Shirley
{"title":"Reliability of InGaP emitter HBTs at high collector voltage","authors":"B. Yeats, M. Bonse, P. Chandler, M. Culver, D. D'Avanzo, G. Essilfie, C. Hutchinson, D. Kuhn, T. Low, T. Shirley","doi":"10.1109/GAAS.2002.1049032","DOIUrl":"https://doi.org/10.1109/GAAS.2002.1049032","url":null,"abstract":"We show analytically how bipolar transistor breakdown voltage varies between BVceo and BVcbo, depending on the ratio of total emitter and base resistances (Ree/Rbb). We present lifetest results for InGaP emitter HBTs biased above Vce = BVceo while using Ree/Rbb = 1. We obtained MTTF /spl sim/ 1400 h at T/sub j/,/sub peak/ /spl ap/ 330/spl deg/C for both standard epi and a high breakdown voltage power epi. Failures are characterized by sudden /spl beta/ drift at Vce /spl lsim/ BVceo, while at higher Vce, gradual /spl beta/ drift also becomes important. We believe this is the first published lifetest study of GaAs-based HBTs stressed at high Vce. Our results further demonstrate the excellent reliability that can be achieved with InGaP-emitter HBTs.","PeriodicalId":142875,"journal":{"name":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","volume":"128 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134246219","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
X-band successive detection log amplifier/limiter MMIC implemented in 0.15 /spl mu/m double recess PHEMT x波段连续检测对数放大器/限幅器MMIC实现在0.15 /spl mu/m双凹槽PHEMT
24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu Pub Date : 2002-12-10 DOI: 10.1109/GAAS.2002.1049058
J. Komiak, W. Kong, K. Nichols
{"title":"X-band successive detection log amplifier/limiter MMIC implemented in 0.15 /spl mu/m double recess PHEMT","authors":"J. Komiak, W. Kong, K. Nichols","doi":"10.1109/GAAS.2002.1049058","DOIUrl":"https://doi.org/10.1109/GAAS.2002.1049058","url":null,"abstract":"Design and performance of an X-band successive detection log amplifier/limiter MMIC covering 8 to 12 GHz is reported. The three-stage amplifier is a cascadeable block providing 20 dB nominal gain, 5.5 dB noise figure, +7 dBm limited output, < 2:1 input/output VSWR, and a 20 dB log range at 50 mV/dB. This is the first reported use of successive detection at X-band frequencies. Previously reported results have been below 7 GHz, required four times the power for the same dynamic range, and twice the chip count. The amplifier is implemented in a fully selective 0.15 /spl mu/m double recess power PHEMT process.","PeriodicalId":142875,"journal":{"name":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121978861","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Impact of RF stress on dispersion and power characteristics of AlGaN/GaN HEMTs 射频应力对AlGaN/GaN hemt色散和功率特性的影响
24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu Pub Date : 2002-12-10 DOI: 10.1109/GAAS.2002.1049035
S. Hsu, P. Valizadeh, D. Pavlidis, J. Moon, M. Micovic, D. Wong, T. Hussain
{"title":"Impact of RF stress on dispersion and power characteristics of AlGaN/GaN HEMTs","authors":"S. Hsu, P. Valizadeh, D. Pavlidis, J. Moon, M. Micovic, D. Wong, T. Hussain","doi":"10.1109/GAAS.2002.1049035","DOIUrl":"https://doi.org/10.1109/GAAS.2002.1049035","url":null,"abstract":"The impact of RF stress on dispersion and power characteristics of AlGaN/GaN HEMTs are reported. Reduced drain current ( /spl sim/ 67 mA/mm in the saturation region) and similar output power and power-added efficiency were found after RF stress. Transconductance dispersion is small before and after RF stress while output resistance dispersion reduces after RF stress. Tests performed under UV light suggest that the observed results may be attributed to trapping in the AlGaN/GaN HEMT layers.","PeriodicalId":142875,"journal":{"name":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117098081","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
1.4-THz gain-bandwidth product InP-HEMTs preamplifier using an improved Cherry-Hooper topology 使用改进的Cherry-Hooper拓扑的1.4 thz增益带宽积InP-HEMTs前置放大器
24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu Pub Date : 2002-12-10 DOI: 10.1109/GAAS.2002.1049053
M. Sato, H. Shigematsu, Y. Inoue, T. Arai, K. Sawada, T. Takahashi, K. Makiyarna, T. Hirose
{"title":"1.4-THz gain-bandwidth product InP-HEMTs preamplifier using an improved Cherry-Hooper topology","authors":"M. Sato, H. Shigematsu, Y. Inoue, T. Arai, K. Sawada, T. Takahashi, K. Makiyarna, T. Hirose","doi":"10.1109/GAAS.2002.1049053","DOIUrl":"https://doi.org/10.1109/GAAS.2002.1049053","url":null,"abstract":"We have developed an InP-HEMT differential-ended broadband preamplifier with THz-class gain-bandwidth product by using an improved Cherry-Hooper topology. The key to achieving the high performance preamplifier is to use a mismatching technique, which expands the impedance difference between gain stages. Using this technique, we achieved 64 dB/spl Omega/ transimpedance gain with a 40 GHz bandwidth, and its gain-bandwidth product reached 1.42 THz - the highest yet reported for 40 Gbit/s preamplifiers.","PeriodicalId":142875,"journal":{"name":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","volume":"87 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117295520","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
A high gain-bandwidth product InP HEMT distributed amplifier with 92 GHz cut-off frequency for 40 Gbit/s applications and beyond 具有92 GHz截止频率的高增益带宽产品InP HEMT分布式放大器，适用于40 Gbit/s及以上的应用
24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu Pub Date : 2002-12-10 DOI: 10.1109/GAAS.2002.1049039
C. Meliani, G. Rondeau, G. Post, J. Decobert, W. Mouzannar, E. Dutisseuil, R. Lefevre
{"title":"A high gain-bandwidth product InP HEMT distributed amplifier with 92 GHz cut-off frequency for 40 Gbit/s applications and beyond","authors":"C. Meliani, G. Rondeau, G. Post, J. Decobert, W. Mouzannar, E. Dutisseuil, R. Lefevre","doi":"10.1109/GAAS.2002.1049039","DOIUrl":"https://doi.org/10.1109/GAAS.2002.1049039","url":null,"abstract":"The design, fabrication and characteristics of a coplanar distributed ultra broadband amplifier are presented. The circuit is fabricated using a composite channel InP CC-HEMT high breakdown voltage technology developed in Alcatel OPTO+. It exhibits an average gain of 13 dB over a 92 GHz -3dB cut-off frequency that corresponds to a state of the art gain-bandwidth product of 410 GHz for baseband amplifier ICs. It still presents 8 dB gain at 110 GHz. Such an amplifier is a good candidate for 40 and 80 Gbit/s optoelectronic driver modules applications. We discuss the use of coplanar waveguide lines and low impedance bias microstrip transmission lines in such a design. We also highlight the need of largest bandwidths for 40 Gbit/s eye diagram quality and the needed gain-bandwidth product for 80 Gbit/s ETDM communications.","PeriodicalId":142875,"journal":{"name":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130908503","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
A 16 GHz MMIC image-rejection resistive mixer with InP HEMTs 含InP hemt的16 GHz MMIC阻像混频器
24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu Pub Date : 2002-12-10 DOI: 10.1109/GAAS.2002.1049042
A. Orzati, F. Robin, H. Meier, W. Bachtold
{"title":"A 16 GHz MMIC image-rejection resistive mixer with InP HEMTs","authors":"A. Orzati, F. Robin, H. Meier, W. Bachtold","doi":"10.1109/GAAS.2002.1049042","DOIUrl":"https://doi.org/10.1109/GAAS.2002.1049042","url":null,"abstract":"In this paper we present a monolithically integrated image-rejection resistive mixer that shifts a signal in the 1 - 2 GHz band up to the 14 - 15 GHz band using a 16 GHz local oscillator (LO). The circuit was realized with our 0.2 /spl mu/m InP HEMT in-house process using a coplanar-waveguide technology. The fabricated circuit presents a peak conversion gain of -7.3 dBm for 2 dBm LO power, an LO suppression of 20 dB and an upper-sideband rejection of more than 17 dB. This performance is excellent if compared to the best reported results for InP HEMT resistive mixers.","PeriodicalId":142875,"journal":{"name":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128146743","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Multi-stage G-band (140-220 GHz) InP HBT amplifiers 多级g波段(140-220 GHz) InP HBT放大器
24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu Pub Date : 2002-12-10 DOI: 10.1109/GAAS.2002.1049026
M. Urteaga, D. Scott, S. Krishnan, Y. Wei, M. Dahlstrom, Z. Griffith, N. Parthasarathy, M. Rodwell
{"title":"Multi-stage G-band (140-220 GHz) InP HBT amplifiers","authors":"M. Urteaga, D. Scott, S. Krishnan, Y. Wei, M. Dahlstrom, Z. Griffith, N. Parthasarathy, M. Rodwell","doi":"10.1109/GAAS.2002.1049026","DOIUrl":"https://doi.org/10.1109/GAAS.2002.1049026","url":null,"abstract":"We report three-stage monolithic amplifiers for the 140-220 GHz frequency band. Two designs have been fabricated in an InAlAs/InGaAs transferred-substrate HBT technology. The first design exhibited a small-signal gain of 12.0 dB at 170 GHz, and the second design exhibited a gain of 8.5 dB at 195 GHz.","PeriodicalId":142875,"journal":{"name":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114588668","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
DC and RF characteristics of depletion-mode GaAs MOSFET employing a thin Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) gate dielectric layer 采用薄Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/)栅极介电层的耗尽型GaAs MOSFET的直流和射频特性
24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu Pub Date : 2002-12-10 DOI: 10.1109/GAAS.2002.1049047
B. Yang, P. Ye, J. Kwo, M. Frei, H. Gossmann, J. Mannaerts, M. Sergent, M. Hong, K. Ng, J. Bude
{"title":"DC and RF characteristics of depletion-mode GaAs MOSFET employing a thin Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) gate dielectric layer","authors":"B. Yang, P. Ye, J. Kwo, M. Frei, H. Gossmann, J. Mannaerts, M. Sergent, M. Hong, K. Ng, J. Bude","doi":"10.1109/GAAS.2002.1049047","DOIUrl":"https://doi.org/10.1109/GAAS.2002.1049047","url":null,"abstract":"DC characteristics of a depletion-mode (D-mode) GaAs MOSFET with a thin Ga/sub 2/O/sub 3/(Gd/sub 2/O/sub 3/) gate dielectric layer (74 /spl Aring/) show low gate leakage current, negligible drain current hysteresis and higher than 10 V gale-drain two-terminal breakdown voltage. Compared to MESFET with the same gate length, channel material and fabricated by the same process, the GaAs MOSFET shows higher unity current gain cutoff frequency (Ft). The higher Ft for the MOSFET than that of the MESFET agrees with earlier theoretical predictions.","PeriodicalId":142875,"journal":{"name":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","volume":"35 12","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120839734","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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