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40 Gbit/s high performances GaAs pHEMT high voltage modulator driver for long haul optical fiber communications 用于长距离光纤通信的40 Gbit/s高性能GaAs pHEMT高压调制器驱动器
24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu Pub Date : 2002-12-10 DOI: 10.1109/GAAS.2002.1049052
W. Mouzannar, F. Jorge, S. Vuye, E. Dutisseuil, R. Lefevre
{"title":"40 Gbit/s high performances GaAs pHEMT high voltage modulator driver for long haul optical fiber communications","authors":"W. Mouzannar, F. Jorge, S. Vuye, E. Dutisseuil, R. Lefevre","doi":"10.1109/GAAS.2002.1049052","DOIUrl":"https://doi.org/10.1109/GAAS.2002.1049052","url":null,"abstract":"In this paper, we describe the development of high gain and high voltage 40 Gb/s modulator driver ICs. Both chips were designed with a double-distributed amplifier topology using a 0.15 /spl mu/m GaAs pHEMT technology process. The modulator driver exhibits 26 dB of small signal gain over 50 GHz of 3 dB bandwidth and provides more than 7.5 Vpp output swing in a 50 /spl Omega/ load to drive LiNbO/sub 3/ modulators.","PeriodicalId":142875,"journal":{"name":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126913014","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
1.1 W/mm high power GaAs/InGaP composite channel FET with asymmetrical LDD structure at 26 V operation 1.1 W/mm大功率GaAs/InGaP复合沟道场效应管，工作电压为26 V，具有非对称LDD结构
24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu Pub Date : 2002-12-10 DOI: 10.1109/GAAS.2002.1049049
K. Nakata, R. Masuyama, S. Nakajima
{"title":"1.1 W/mm high power GaAs/InGaP composite channel FET with asymmetrical LDD structure at 26 V operation","authors":"K. Nakata, R. Masuyama, S. Nakajima","doi":"10.1109/GAAS.2002.1049049","DOIUrl":"https://doi.org/10.1109/GAAS.2002.1049049","url":null,"abstract":"A GaAs/InGaP composite channel is proposed in order to improve the electron transport properties of an InGaP FET. Adopting an LDD (Lightly Doped Drain) structure and optimizing gate to drain spacing improved the breakdown characteristic and enabled high voltage operation of the FET. With this novel FET, we could achieve a high output power density of 1.1 W/mm at high voltage operation such as 26 V. The FET showed better distortion characteristics than the conventional GaAs MESFET. Third order inter modulation distortion (IM3) was improved by 7 dB.","PeriodicalId":142875,"journal":{"name":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","volume":"148 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132731087","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Indium gallium arsenide avalanche photodiodes... not just for telecom anymore 砷化铟镓雪崩光电二极管…不仅仅是电信业
24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu Pub Date : 2002-12-10 DOI: 10.1109/GAAS.2002.1049027
J. C. Dries
{"title":"Indium gallium arsenide avalanche photodiodes... not just for telecom anymore","authors":"J. C. Dries","doi":"10.1109/GAAS.2002.1049027","DOIUrl":"https://doi.org/10.1109/GAAS.2002.1049027","url":null,"abstract":"Continual advances in III-V semiconductor growth and processing technologies are bringing devices that were once considered exotic into the mainstream. Here we discuss the design and fabrication of InGaAs avalanche photodiodes that are produced with yields approaching that of PIN photodiodes, enabling optical receivers that achieve 8-10 dB better sensitivity than their PIN diode counterparts. In addition to driving cost down, the high die yield enjoyed by current designs enable new applications using 1D and 2D arrays of devices such as imaging laser radar. The availability of inexpensive control circuits that are used for APD bias and temperature compensation makes the widespread use of these detectors extremely practical.","PeriodicalId":142875,"journal":{"name":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","volume":"191 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115624881","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
1 watt broad Ka-band ultra small high power amplifier MMICs using 0.25-/spl mu/m GaAs PHEMTs 1瓦宽ka波段超小型高功率放大器mmic使用0.25-/spl μ m GaAs PHEMTs
24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu Pub Date : 2002-12-10 DOI: 10.1109/GAAS.2002.1049025
A. Bessemoulin, J. Dishong, G. Clark, D. White, P. Quentin, H. Thomas, D. Geiger
{"title":"1 watt broad Ka-band ultra small high power amplifier MMICs using 0.25-/spl mu/m GaAs PHEMTs","authors":"A. Bessemoulin, J. Dishong, G. Clark, D. White, P. Quentin, H. Thomas, D. Geiger","doi":"10.1109/GAAS.2002.1049025","DOIUrl":"https://doi.org/10.1109/GAAS.2002.1049025","url":null,"abstract":"We report the design and performance of ultra compact high power amplifier MMICs for Ka-band applications. Using a production 4-inch 0.25-/spl mu/m GaAs PHEMT technology, in combination with appropriate compact circuit topologies, these power amplifiers achieved on wafer, a linear gain of more than 18 dB over the 26-36 GHz frequency range, with an output power at 1 dB gain compression of P/sub -1 dB/=29.5 dBm (900 mW) and a saturated output power above 1 watt (30.1 dBm), for a chip size of only 2.25 mm/sup 2/ (1.25/spl times/1.8 mm/sup 2/). To our knowledge, this is the highest output power and gain densities per chip area (i.e. 400-440 mW/mm/sup 2/ and 8 dB/mm/sup 2/) ever reported at Ka-band for any GaAs PHEMT MMIC power amplifier.","PeriodicalId":142875,"journal":{"name":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115159443","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
A 4-Watt X-band compact coplanar high power amplifier MMIC with 18-dB gain and 25-% PAE 一种4瓦x波段紧凑型共面高功率放大器MMIC，增益为18db, PAE为25%
24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu Pub Date : 2002-12-10 DOI: 10.1109/GAAS.2002.1049057
A. Bessemoulin, M.R. Quay, S. Ramberger, M. Schlechtweg
{"title":"A 4-Watt X-band compact coplanar high power amplifier MMIC with 18-dB gain and 25-% PAE","authors":"A. Bessemoulin, M.R. Quay, S. Ramberger, M. Schlechtweg","doi":"10.1109/GAAS.2002.1049057","DOIUrl":"https://doi.org/10.1109/GAAS.2002.1049057","url":null,"abstract":"The performance of a compact coplanar (CPW) microwave monolithic integrated circuit (MMIC) amplifier with high output power in the X-band is presented. Based on our 0.3-/spl mu/m gate length GaAs power PHEMT process on 4\" wafer, this two-stage amplifier, having a chip size of 16 mm/sup 2/, averages 4 Watts CW and 25-% PAE in the X-band, with more than 18-dB linear gain. Peak output powers of P/sub -1dB/ = 36.3 dBm (4.3 Watts) and P/sub sat/ of 36.9 dBm (4.9 Watt) at 10 GHz with a power added efficiency of 35 % were also measured. Compared to previously reported X-band coplanar HPA, this represents a chip size reduction of 20 %, comparable to the size of compact state-of-the-art microstrip PAs.","PeriodicalId":142875,"journal":{"name":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115936802","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 22
The evolution of test methodologies for high-speed digital communications components 高速数字通信器件测试方法的发展
24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu Pub Date : 2002-12-10 DOI: 10.1109/GAAS.2002.1049060
G. LeCheminant
{"title":"The evolution of test methodologies for high-speed digital communications components","authors":"G. LeCheminant","doi":"10.1109/GAAS.2002.1049060","DOIUrl":"https://doi.org/10.1109/GAAS.2002.1049060","url":null,"abstract":"Varied system architectures, strong competition, and a weak marketplace have made the process of Gbit/s component evaluation and verification far more complicated than simply making accurate measurements. While compliance to industry standards is essential, cost is becoming increasingly important, with test being a significant portion of overall cost. This paper compares and contrasts Ethernet and SONET/SDH test strategies for 10 Gbit/s transmission, and takes a forward look to 40 Gbit/s devices.","PeriodicalId":142875,"journal":{"name":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","volume":"379 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124721471","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A broadband (1-20 GHz) SiGe monolithic SPDT switch 宽带(1- 20ghz) SiGe单片SPDT交换机
24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu Pub Date : 2002-12-10 DOI: 10.1109/GAAS.2002.1049072
R. Tayrani, M. Teshiba, G. Sakamoto
{"title":"A broadband (1-20 GHz) SiGe monolithic SPDT switch","authors":"R. Tayrani, M. Teshiba, G. Sakamoto","doi":"10.1109/GAAS.2002.1049072","DOIUrl":"https://doi.org/10.1109/GAAS.2002.1049072","url":null,"abstract":"This paper reports the performances of a broadband monolithic SiGe PIN diode SPDT switch that is based on the IBM 5-HP SiGe foundry process. The switch contains a tightly integrated series-shunt vertical PIN structure in each arm having a junction area of 50 /spl mu/m/sup 2/ and 80 /spl mu/m/sup 2/ respectively. On-chip resistive bias networks are used to ensure broadband operation. The switch \"ON\" arm demonstrates a path-loss of less than 1.3 dB while its \"OFF\" arm maintains an isolation of greater than 40 dB across 1-20 GHz. The total DC power consumption for maintaining such a high performance is only 22 mW. The switching speed, the 1-dB insertion loss compression point and the third order intercept point were found to be <1 nsec, 19 dBm, and 30.0 dBm respectively.","PeriodicalId":142875,"journal":{"name":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130419691","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A 12-GS/s track-and-hold amplifier in InP DHBT technology 一种采用InP DHBT技术的12gs /s跟踪保持放大器
24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu Pub Date : 2002-12-10 DOI: 10.1109/GAAS.2002.1049078
J. Lee, A. Leven, Y. Baeyens, C. Chen, Y. Yang, W. Sung, C. Liu, J. Frackvoiak, L. Chua, R. Kopf, Y. Chen
{"title":"A 12-GS/s track-and-hold amplifier in InP DHBT technology","authors":"J. Lee, A. Leven, Y. Baeyens, C. Chen, Y. Yang, W. Sung, C. Liu, J. Frackvoiak, L. Chua, R. Kopf, Y. Chen","doi":"10.1109/GAAS.2002.1049078","DOIUrl":"https://doi.org/10.1109/GAAS.2002.1049078","url":null,"abstract":"A 12 GS/s track-and-hold amplifier (THA) for a DSP-based electrical polarization-mode dispersion compensator (e-PMDC) in a 10 GHz optical receiver, featuring a total harmonic distortion (THD) compatible with 6 bit operation on 1 V/sub p-p/ differential input range at -5.2 V supply, has been designed and fabricated in InP/InGaAs/InP double-heterojunction bipolar transistor (DHBT) technology. This THA shows a THD of better than -23 dB for 12 GHz 1 V/sub p-p/ input, corresponding 4 bit resolution, under a differential clock of 12 GHz.","PeriodicalId":142875,"journal":{"name":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127768653","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
40 GHz transimpedance amplifier with differential outputs using InP/InGaAs heterojunction bipolar transistors 采用InP/InGaAs异质结双极晶体管的40 GHz跨阻差分输出放大器
24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu Pub Date : 2002-12-10 DOI: 10.1109/GAAS.2002.1049030
Charles Wu, E. Sovero, Bruce Massey
{"title":"40 GHz transimpedance amplifier with differential outputs using InP/InGaAs heterojunction bipolar transistors","authors":"Charles Wu, E. Sovero, Bruce Massey","doi":"10.1109/GAAS.2002.1049030","DOIUrl":"https://doi.org/10.1109/GAAS.2002.1049030","url":null,"abstract":"High gain and bandwidth transimpedance amplifiers (TIA) are required for fiber optic receiver modules. This paper reports on the design, fabrication and characterization of a 40 Gbit/s TIA for SONET/SDH STS-768/STM-256 applications based on an InP/InGaAs single heterojunction bipolar transistor (SHBT) process developed at Vitesse Semiconductor Corporation (Vitesse Indium Phosphide Release 1 or VIP-1). This amplifier consists of a single-ended input transimpedance pre-amplifier and a differential output post-amplifier. The measured differential transimpedance is 1800 /spl Omega/ with -3dB bandwidth greater than 40 GHz. The high gain of this circuit eliminates the need for a stand-alone limiting amplifier between the conventional transimpedance pre-amplifier and the demultiplexer (DMUX) in short reach applications.","PeriodicalId":142875,"journal":{"name":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","volume":"236 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123044285","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 33
Gallium nitride: use in high power control applications 氮化镓:用于高功率控制应用
24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu Pub Date : 2002-12-10 DOI: 10.1109/GAAS.2002.1049045
R. Caverly, N. Drozdovski, C. Joye, M. Quinn
{"title":"Gallium nitride: use in high power control applications","authors":"R. Caverly, N. Drozdovski, C. Joye, M. Quinn","doi":"10.1109/GAAS.2002.1049045","DOIUrl":"https://doi.org/10.1109/GAAS.2002.1049045","url":null,"abstract":"The use of gallium nitride field effect transistors in microwave and RF control applications is discussed. A control model for the FET is presented and used to predict on-state resistance, off-state capacitance and switch cutoff frequency. The effects of the gate bias circuit and high power operation on on-state resistance are also presented.","PeriodicalId":142875,"journal":{"name":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121453231","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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