发布求助
文献互助 智能选刊 最新文献

24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu最新文献

筛选
英文 中文
High reliability in low noise InGaP gated PHEMTs 低噪声InGaP门控phemt的高可靠性
24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu Pub Date : 2002-12-10 DOI: 10.1109/GAAS.2002.1049034
C.S. Wang, H. Huang, Y. Wang, C. Wu, C. Chang
{"title":"High reliability in low noise InGaP gated PHEMTs","authors":"C.S. Wang, H. Huang, Y. Wang, C. Wu, C. Chang","doi":"10.1109/GAAS.2002.1049034","DOIUrl":"https://doi.org/10.1109/GAAS.2002.1049034","url":null,"abstract":"This work presents a study on the high reliability of noise characteristics of InGaP low noise PHEMTs, which was demonstrated through DC and thermal stress. The devices that we used were In/sub 0.49/Ga/sub 0.51/P/In/sub 0.15/Ga/sub 0.85/ As/GaAs low noise pseudomorphic high electron mobility transistors (PHEMTs) with the gate dimensions of 0.25 /spl times/ 160 /spl mu/m/sup 2/. The DC-stress conditions are 1) V/sub DS/ = 6V, V/sub GS/ = 0V and 2) I/sub G/ = -8 mA (50mA/mm). The ranging of thermal-stress is from 100/spl deg/C to 250/spl deg/C. The noise characteristics were measured at 12 GHz and DC bias condition is V/sub DS/ = 2V, I/sub DS/ = 10 mA. The key noise-effect parameters of devices are the deep-trap behaviour in device, source/gate resistances, gate to source capacitance and intrinsic transconductance. We showed the very small variation of minimum noise figure, NF/sub min/ and associated power gain, G/sub a/ after DC and thermal stress by explaining the variation of these key parameters to demonstrate the high reliability in InGaP low noise PHEMTs.","PeriodicalId":142875,"journal":{"name":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125143467","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Gallium nitride (GaN) HEMT's: progress and potential for commercial applications 氮化镓(GaN) HEMT的进展和商业应用潜力
24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu Pub Date : 2002-12-10 DOI: 10.1109/GAAS.2002.1049069
J. Shealy, J. Smart, M. Poulton, R. Sadler, D. Grider, S. Gibb, B. Hosse, B. Sousa, D. Halchin, V. Steel, P. Garber, P. Wilkerson, B. Zaroff, J. Dick, T. Mercier, J. Bonaker, M. Hamilton, C. Greer, M. Isenhour
{"title":"Gallium nitride (GaN) HEMT's: progress and potential for commercial applications","authors":"J. Shealy, J. Smart, M. Poulton, R. Sadler, D. Grider, S. Gibb, B. Hosse, B. Sousa, D. Halchin, V. Steel, P. Garber, P. Wilkerson, B. Zaroff, J. Dick, T. Mercier, J. Bonaker, M. Hamilton, C. Greer, M. Isenhour","doi":"10.1109/GAAS.2002.1049069","DOIUrl":"https://doi.org/10.1109/GAAS.2002.1049069","url":null,"abstract":"This paper focuses on the development of 100 mm gallium nitride HEMT technology at RF Micro Devices and the utilization of GaN transistors for commercial applications such as power amplifiers, power switches and low-noise power oscillators.","PeriodicalId":142875,"journal":{"name":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","volume":"114 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116514619","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 42
A C-band fully organic-based transmitter module c波段全有机发射机模块
24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu Pub Date : 2002-12-10 DOI: 10.1109/GAAS.2002.1049070
C. Lee, M.F. Davis, S. Yoon, S. Chakraborty, A. Sutono, K. Lim, S. Pinel, J. Laskar
{"title":"A C-band fully organic-based transmitter module","authors":"C. Lee, M.F. Davis, S. Yoon, S. Chakraborty, A. Sutono, K. Lim, S. Pinel, J. Laskar","doi":"10.1109/GAAS.2002.1049070","DOIUrl":"https://doi.org/10.1109/GAAS.2002.1049070","url":null,"abstract":"We present the first report of a fully integrated multilayer organic (MLO)-based transmitter module incorporating a single MMIC for WLAN applications. We report the design and measurement of a C-band upconverter MMIC with excellent LO and image rejection as well as wideband operation fabricated in a commercial GaAs MESFET process. This development of a complete module also includes a miniaturized integrated square patch resonator band pass filter (BPF) with inset feed lines fabricated in MLO packaging technology. This realizes a compact and. highly integrated transmitter module suitable for the low cost network interface card (NIC), IEEE 802.11a WLAN applications in 56 GHz frequency band. This transmitter module demonstrates the feasibility of developing a miniature high performance and highly integrated wireless system on package (SOP)-based solutions.","PeriodicalId":142875,"journal":{"name":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132065129","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Simulations of quantum transport in HEMT using density gradient model 用密度梯度模型模拟HEMT中的量子输运
24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu Pub Date : 2002-12-10 DOI: 10.1109/GAAS.2002.1049067
E. Lyumkis, R. Mickevicius, O. Penzin, B. Polsky, K. El Sayed, A. Wettstein, W. Fichtner
{"title":"Simulations of quantum transport in HEMT using density gradient model","authors":"E. Lyumkis, R. Mickevicius, O. Penzin, B. Polsky, K. El Sayed, A. Wettstein, W. Fichtner","doi":"10.1109/GAAS.2002.1049067","DOIUrl":"https://doi.org/10.1109/GAAS.2002.1049067","url":null,"abstract":"In this paper, quantum transport simulations for AlGaAs/InGaAs HEMT devices based on the density gradient model are presented. It is shows that size quantization effects have a pronounced influence on the electrical characteristics.","PeriodicalId":142875,"journal":{"name":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","volume":"102 1 Pt 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130331909","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Three-dimensional analysis of leakage currents in III-V HBTs III-V型HBTs泄漏电流的三维分析
24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu Pub Date : 2002-12-10 DOI: 10.1109/GAAS.2002.1049066
V. Palankovski, R. Klima, R. Schultheis, S. Selberherr
{"title":"Three-dimensional analysis of leakage currents in III-V HBTs","authors":"V. Palankovski, R. Klima, R. Schultheis, S. Selberherr","doi":"10.1109/GAAS.2002.1049066","DOIUrl":"https://doi.org/10.1109/GAAS.2002.1049066","url":null,"abstract":"We present fully three-dimensional simulation results for a real HBT structure as applied in MMICs. Investigation of the leakage is performed in attempt to explain device behavior in the complete voltage range. The paper gives a justification of the need for three-dimensional simulation and addresses critical development, modeling, and simulation issues.","PeriodicalId":142875,"journal":{"name":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","volume":"172 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117342619","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
SiGe differential transimpedance amplifier with 50 GHz bandwidth 50 GHz带宽SiGe差分跨阻放大器
24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu Pub Date : 1900-01-01 DOI: 10.1109/gaas.2002.1049031
J. Weiner, A. Leven, V. Houtsma, Y. Baeyens, Y. Chen, P. Paschke
{"title":"SiGe differential transimpedance amplifier with 50 GHz bandwidth","authors":"J. Weiner, A. Leven, V. Houtsma, Y. Baeyens, Y. Chen, P. Paschke","doi":"10.1109/gaas.2002.1049031","DOIUrl":"https://doi.org/10.1109/gaas.2002.1049031","url":null,"abstract":"In this paper, we demonstrate a fully differential transimpedance amplifier (TIA) with 49 dB-ohm transimpedance, greater than 50 GHz bandwidth, and input-referred current noise less than 30pA//spl radic/(Hz).","PeriodicalId":142875,"journal":{"name":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","volume":"82 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122329593","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 52
An over 110-GHz InP HEMT flip-chip distributed baseband amplifier with inverted microstrip line structure for optical transmission systems 用于光传输系统的110 ghz以上InP HEMT倒装芯片分布式基带放大器
24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu Pub Date : 1900-01-01 DOI: 10.1109/gaas.2002.1049038
S. Masuda, T. Hirose, T. Takahashi, M. Nishi, S. Yokokawa, S. Iijima, K. Ono, N. Hara, K. Joshin
{"title":"An over 110-GHz InP HEMT flip-chip distributed baseband amplifier with inverted microstrip line structure for optical transmission systems","authors":"S. Masuda, T. Hirose, T. Takahashi, M. Nishi, S. Yokokawa, S. Iijima, K. Ono, N. Hara, K. Joshin","doi":"10.1109/gaas.2002.1049038","DOIUrl":"https://doi.org/10.1109/gaas.2002.1049038","url":null,"abstract":"We successfully developed state of the art InP HEMT distributed amplifiers by using inverted microstrip line technology. For one, we achieved a gain of 14.5 dB and a 94-GHz 3-dB bandwidth resulting in a gain-bandwidth product of 500 GHz, and for the other we achieved a gain of 7.5 dB and a 3-dB bandwidth of over 110 GHz. This technology also demonstrates the capability of fabricating ultra-broadband packaged ICs with flip-chip assembly for operation up to the W-band. To our knowledge, these results represent the highest gain bandwidth product and the widest bandwidth for distributed amplifiers reported to date.","PeriodicalId":142875,"journal":{"name":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133547901","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 43
Transforming MMICs 改变MMICs
24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu Pub Date : 1900-01-01 DOI: 10.1109/gaas.2002.1049017
E. Martinez
{"title":"Transforming MMICs","authors":"E. Martinez","doi":"10.1109/gaas.2002.1049017","DOIUrl":"https://doi.org/10.1109/gaas.2002.1049017","url":null,"abstract":"In this paper, we describe two new DARPA initiatives addressing new concepts in compound semiconductor materials and architectures that will radically transform monolithic microwave integrated circuits (MMICs) technology to address future requirements for military and commercial sensors and mobile communication networks.","PeriodicalId":142875,"journal":{"name":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","volume":"323 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127568591","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
首页 上一页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信