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Designing high-speed MMICs and OEICs for 10 Gb/s and 40 Gb/s optical transponder front-ends 10gb /s和40gb /s光转发器前端的高速mmic和oeic设计
24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu Pub Date : 2002-12-10 DOI: 10.1109/GAAS.2002.1049064
K. Laursen, C. Yuen, D. Chu
{"title":"Designing high-speed MMICs and OEICs for 10 Gb/s and 40 Gb/s optical transponder front-ends","authors":"K. Laursen, C. Yuen, D. Chu","doi":"10.1109/GAAS.2002.1049064","DOIUrl":"https://doi.org/10.1109/GAAS.2002.1049064","url":null,"abstract":"The major components of high-speed (10 and 40 Gb/s) fiber-optic communication front-ends are reviewed, and some of the fundamental design criteria for these components are discussed. The differences between designing these high-speed digital circuits and more traditional microwave amplifiers are highlighted, and the capabilities and shortcomings of the current microwave design tools are discussed. Finally, some examples of simulated results and measurements are provided for some of the MMICs designed by the authors.","PeriodicalId":142875,"journal":{"name":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127215099","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
RF power amplifiers for wireless communications 无线通信用射频功率放大器
24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu Pub Date : 2002-12-10 DOI: 10.1109/GAAS.2002.1049044
S. Cripps
{"title":"RF power amplifiers for wireless communications","authors":"S. Cripps","doi":"10.1109/GAAS.2002.1049044","DOIUrl":"https://doi.org/10.1109/GAAS.2002.1049044","url":null,"abstract":"A wide variety of semiconductor devices are used in wireless power amplifiers. The RF performance and other attributes of cellphone RF power amplifiers using Si and GaAs based technologies are reviewed and compared.","PeriodicalId":142875,"journal":{"name":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124839697","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1265
InP HBT ring oscillator with 2.0 ps/stage gate delay 具有2.0 ps/级门延迟的InP HBT环形振荡器
24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu Pub Date : 2002-12-10 DOI: 10.1109/GAAS.2002.1049054
N. Srivastava, G. Raghavan, R. Thiagarajah, M. Case, E. Arnold, C. Pobanz, S. Nielsen, J. Yen, R.A. Johnson
{"title":"InP HBT ring oscillator with 2.0 ps/stage gate delay","authors":"N. Srivastava, G. Raghavan, R. Thiagarajah, M. Case, E. Arnold, C. Pobanz, S. Nielsen, J. Yen, R.A. Johnson","doi":"10.1109/GAAS.2002.1049054","DOIUrl":"https://doi.org/10.1109/GAAS.2002.1049054","url":null,"abstract":"We have demonstrated a record gate delay of 2 ps/stage in a 17-stage ring oscillator fabricated in a 170 GHz f/sub t/, 150 GHz f/sub max/ InP HBT technology. Stable operation was achieved for both normal and higher order ring modes. We performed basic circuit time constant analysis as well as detailed computer simulations, and arrived at calculated gate delays which are in agreement with our experimental results. The approach of using stage delay from a ring oscillator as a technology speed metric can be misleading. Such an approach would predict 250 GHz circuits in this process - which is not feasible. Real circuits require fanout of two or more which can substantially increase gate delay. In our circuit, we focused on broad-banding each individual stage and reducing interconnect parasitics to achieve the above result.","PeriodicalId":142875,"journal":{"name":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121147052","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Bias dependence of 0.25 /spl mu/m pHEMT parasitic elements as determined with a direct extraction method 直接萃取法测定0.25 /spl mu/m pHEMT寄生元素的偏置依赖性
24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu Pub Date : 2002-12-10 DOI: 10.1109/GAAS.2002.1049068
C. Campbell
{"title":"Bias dependence of 0.25 /spl mu/m pHEMT parasitic elements as determined with a direct extraction method","authors":"C. Campbell","doi":"10.1109/GAAS.2002.1049068","DOIUrl":"https://doi.org/10.1109/GAAS.2002.1049068","url":null,"abstract":"There are numerous occurrences of published FET modeling procedures that make use of the assumption that some or all of the parasitic element values have negligible bias dependence. A direct extraction method for FET parasitic elements was recently introduced by C.F. Campbell and S.A. Brown (IEEE Trans. Microwave Theory Tech., vol. 49, no 7, pp. 1241-1247, 2001). Given a value for R/sub g/, the remaining parasitic elements, R/sub s/, R/sub d/, L/sub g/, L/sub s/, and L/sub d/ are analytically extracted from device S-parameter data for a single active bias condition. Since the method requires no optimization, each FET model is extracted in a consistent and repeatable manner making it a good candidate for studying the bias dependence of the equivalent circuit elements. The technique utilizes the small signal FET model suggested by Curtice where the drain current source is controlled by the voltage across the series combination of C/sub gs/ and R/sub i/ (W. Curtice and R. Camisa, ibid., vol. 32, pp. 1573-1578, 1984). A more common configuration is to use the voltage across C/sub gs/ only to control the drain current source and a modification to the algorithm is required. In this paper, the direct extraction method presented by Campbell and Brown is reviewed and modified for the drain current controlling voltage across C/sub gs/ only. The technique is then applied to investigate the bias dependence of the parasitic elements for a 0.25 /spl mu/m pHEMT device.","PeriodicalId":142875,"journal":{"name":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115801323","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Overview on GaAs MMICs for automotive radar 汽车雷达用GaAs mmic综述
24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu Pub Date : 2002-12-10 DOI: 10.1109/GAAS.2002.1049022
M. Camiade
{"title":"Overview on GaAs MMICs for automotive radar","authors":"M. Camiade","doi":"10.1109/GAAS.2002.1049022","DOIUrl":"https://doi.org/10.1109/GAAS.2002.1049022","url":null,"abstract":"This paper gives an overview of the GaAs IC developments dedicated to automotive radar applications. First, a short description of the car radar configuration and functionalities is given. Then there is an analysis of the key requirements down to component level. Finally, a status is proposed on the developments, showing how the GaAs MMIC technologies can bring efficient solutions.","PeriodicalId":142875,"journal":{"name":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","volume":"293 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132126333","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Silicon germanium BiCMOS technology 硅锗BiCMOS技术
24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu Pub Date : 2002-12-10 DOI: 10.1109/GAAS.2002.1049016
P. Kempf, M. Racanelli
{"title":"Silicon germanium BiCMOS technology","authors":"P. Kempf, M. Racanelli","doi":"10.1109/GAAS.2002.1049016","DOIUrl":"https://doi.org/10.1109/GAAS.2002.1049016","url":null,"abstract":"In the past few years, the cutoff frequency of silicon germanium bipolar transistors has nearly quadrupled for devices integrated in production BiCMOS process technology. This has enabled integration, speed and power improvements using silicon-based solutions in communications products previously served exclusively by III-V technology.","PeriodicalId":142875,"journal":{"name":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","volume":"78 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133801322","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Enhanced CDMA performance from an InGaP/InGaAsN/GaAs N-p-N double heterojunction bipolar transistor InGaP/InGaAsN/GaAs N-p-N双异质结双极晶体管提高CDMA性能
24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu Pub Date : 2002-12-10 DOI: 10.1109/GAAS.2002.1049076
R. Yarborough, B. Landini, R. Welser, J. Yang, T. Henderson
{"title":"Enhanced CDMA performance from an InGaP/InGaAsN/GaAs N-p-N double heterojunction bipolar transistor","authors":"R. Yarborough, B. Landini, R. Welser, J. Yang, T. Henderson","doi":"10.1109/GAAS.2002.1049076","DOIUrl":"https://doi.org/10.1109/GAAS.2002.1049076","url":null,"abstract":"We have demonstrated the DC characteristics and CDMA performance of an NpN InGaP/InGaAsN/GaAs double heterojunction bipolar transistor (DHBT) and compared the results to conventional InGaP/GaAs HBTs. A 100 mV reduction in base-emitter turn-on voltage and 35 mV reduction in offset voltage is established relative to InGaP/GaAs HBTs using a low energy-gap InGaAsN alloy base material and optimized heterointerfaces. InGaP/InGaAsN DHBT structures with high p-type doping levels (/spl sim/3/spl times/10/sup 19/ cm/sup -3/) have demonstrated DC current gains of /spl beta/=70 at 350 /spl Omega///spl square/ base sheet resistance. The DC current gain of InGaP/InGaAsN DHBTs has been improved by 46 % by grading the base layer composition. InGaAsN DHBTs have demonstrated 1.9 GHz CDMA IS-95 performance of 21 dBm output power (0.31 mW//spl mu/m/sup 2/ - 933 mW/mm), with 18.5 dB associated gain and greater than 53 % power-added efficiency at 45 dBc ACPR and 3 V operation. This represents an 83 mW/mm increase in output power and 3.8 percentage points improvement in PAE performance relative to InGaP/GaAs HBTs.","PeriodicalId":142875,"journal":{"name":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","volume":"85 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115690719","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
High-speed optoelectronic packaging 高速光电封装
24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu Pub Date : 2002-12-10 DOI: 10.1109/GAAS.2002.1049019
B. Velsher
{"title":"High-speed optoelectronic packaging","authors":"B. Velsher","doi":"10.1109/GAAS.2002.1049019","DOIUrl":"https://doi.org/10.1109/GAAS.2002.1049019","url":null,"abstract":"The demand for greater bandwidth has stimulated the increased integration of optical and electrical devices in optoelectronic modules. In many cases the new components require high-speed electrical interconnect and effective thermal management solutions. Assembly automation is seen as a requirement to achieve cost-effective solutions. All of this leads to the need for new optoelectronic packaging technologies. At high signal rates all electrical transitions must be treated as active parts of the electrical circuit - the package can no longer be designed in isolation. This presentation describes various aspects of optoelectronic packaging and shows the potential solutions developed by package suppliers.","PeriodicalId":142875,"journal":{"name":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130841244","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Reliability of commercial InP HBTs under high current density lifetests 商用InP HBTs在高电流密度寿命试验下的可靠性
24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu Pub Date : 2002-12-10 DOI: 10.1109/GAAS.2002.1049036
K. Feng, N. Nguyen, C. Nguyen
{"title":"Reliability of commercial InP HBTs under high current density lifetests","authors":"K. Feng, N. Nguyen, C. Nguyen","doi":"10.1109/GAAS.2002.1049036","DOIUrl":"https://doi.org/10.1109/GAAS.2002.1049036","url":null,"abstract":"GCS has successfully developed a high performance and manufacturable 4-inch InP HBT technology for commercial pure-play foundry services. In this paper, we demonstrated that with our proprietary device design and process technology, GCS's InP HBTs show potentially excellent reliability under lifetests at current densities of 100kA/cm/sup 2/ or higher. The V/sub be/'s at both low and high current densities have little shift up to 4000hrs under 150kA/cm/sup 2/, which indicates that the C-doped InP HBT is potentially much more stable compared to Be-doped InP HBT for high current density operation. The emitter resistance also shows very stable behavior over the stress time under high current density stresses.","PeriodicalId":142875,"journal":{"name":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131728333","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
0.1 /spl mu/m InGaAs/InAlAs/InP HEMT MMICs - a flight qualified technology 0.1 /spl mu/m InGaAs/InAlAs/InP HEMT mmic -飞行合格技术
24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu Pub Date : 2002-12-10 DOI: 10.1109/GAAS.2002.1049033
Y. Chou, D. Leung, R. Lai, R. Grundbacher, M. Barsky, Q. Kan, R. Tsai, D. Eng, M. Wojtowicz, T. Block, P. Liu, S. Olson, A. Oki, D. Streit
{"title":"0.1 /spl mu/m InGaAs/InAlAs/InP HEMT MMICs - a flight qualified technology","authors":"Y. Chou, D. Leung, R. Lai, R. Grundbacher, M. Barsky, Q. Kan, R. Tsai, D. Eng, M. Wojtowicz, T. Block, P. Liu, S. Olson, A. Oki, D. Streit","doi":"10.1109/GAAS.2002.1049033","DOIUrl":"https://doi.org/10.1109/GAAS.2002.1049033","url":null,"abstract":"0.1 /spl mu/m InGaAs/InAlAs/InP HEMT MMIC technology on 3- inch InP substrates has been qualified in the categories of three-temperature lifetest, gamma radiation, RF survivability, electrostatic discharge, via-hole baking, and H/sub 2/ poisoning. The three-temperature lifetest (T/sub 1/ = 215/spl deg/C, T/sub 2/ = 230/spl deg/C and T/sub 3/ = 250/spl deg/C) of 0.1 /spl mu/m InGaAs/InAlAs/InP HEMT MMICs in a N/sub 2/ ambient demonstrates an activation energy (Ea) as high as 1.9 eV, achieving a projected median-time-to-failure (MTF) /spl ap/ 1/spl times/10/sup 8/ hours at a 125/spl deg/C junction temperature. Gamma radiation up to 5 mega RAD dose does not induce any degradation of DC/RF characteristics. Electrostatic discharge (ESD) shows destructive voltage up to 100 Volts. Furthermore, 0.1 /spl mu/m InP HEMTs exhibit less sensitivity to H/sub 2/ exposure than 0.1 /spl mu/m GaAs pseudomorphic HEMTs. The qualification results demonstrate the readiness of 0.1 /spl mu/m InGaAs/InAlAs/InP MMICs technology for flight applications.","PeriodicalId":142875,"journal":{"name":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","volume":"165 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121126457","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 19
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