商用InP HBTs在高电流密度寿命试验下的可靠性

24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu Pub Date : 2002-12-10 DOI:10.1109/GAAS.2002.1049036

K. Feng, N. Nguyen, C. Nguyen

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引用次数: 8

摘要

GCS已经成功开发了一种高性能和可制造的4英寸InP HBT技术，用于商业纯晶圆代工服务。在本文中，我们证明了通过我们专有的器件设计和工艺技术，GCS的InP HBTs在电流密度为100kA/cm/sup 2/或更高的寿命测试中显示出潜在的出色可靠性。在150kA/cm/sup /下，高电流密度和低电流密度下的V/sub /s在4000hrs时几乎没有变化，这表明在高电流密度下，掺c的InP HBT比掺be的InP HBT更稳定。在高电流密度应力下，发射极电阻在应力时间内也表现出非常稳定的行为。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Reliability of commercial InP HBTs under high current density lifetests

GCS has successfully developed a high performance and manufacturable 4-inch InP HBT technology for commercial pure-play foundry services. In this paper, we demonstrated that with our proprietary device design and process technology, GCS's InP HBTs show potentially excellent reliability under lifetests at current densities of 100kA/cm/sup 2/ or higher. The V/sub be/'s at both low and high current densities have little shift up to 4000hrs under 150kA/cm/sup 2/, which indicates that the C-doped InP HBT is potentially much more stable compared to Be-doped InP HBT for high current density operation. The emitter resistance also shows very stable behavior over the stress time under high current density stresses.

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24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu

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