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An InP HBT common-base amplifier with tunable transimpedance for 40 Gb/s applications 具有可调通阻的InP HBT共基放大器，适用于40gb /s的应用
24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu Pub Date : 2002-12-10 DOI: 10.1109/GAAS.2002.1049050
K. Kobayashi
{"title":"An InP HBT common-base amplifier with tunable transimpedance for 40 Gb/s applications","authors":"K. Kobayashi","doi":"10.1109/GAAS.2002.1049050","DOIUrl":"https://doi.org/10.1109/GAAS.2002.1049050","url":null,"abstract":"This work features a 40 Gb/s common-base transimpedance amplifier (TIA) design that employs electronically tunable transimpedance to compensate for various combinations of photodetector and hybrid interconnect parasitics. A tuning transimpedance BW range of 10 GHz is demonstrated using this approach. Integrated with a 40 fF photodetector, the transimpedance amplifier achieves 62.3 dB-ohm (1.3 kohm) differential transimpedance with a bandwidth of 39.3 GHz while consuming only 165 mW. This corresponds to a transimpedance-BW product per DC power of 310 ohms-GHz/mW. To the author's knowledge, this work is the first published demonstration of a tunable transimpedance amplifier for 40 Gb/s applications, and is among the highest TZ-BWP per DC power reported for a 40 Gb/s TIA.","PeriodicalId":142875,"journal":{"name":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133465584","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Improvement of microscopic and macroscopic uniformity in 4-inch InP substrate for IC application by vertical boat growth 垂直船形生长法改善集成电路用4英寸InP衬底微观和宏观均匀性
24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu Pub Date : 2002-12-10 DOI: 10.1109/GAAS.2002.1049048
T. Kawase, N. Hosaka, K. Hashio, M. Matsushima, T. Sakurada, R. Nakai
{"title":"Improvement of microscopic and macroscopic uniformity in 4-inch InP substrate for IC application by vertical boat growth","authors":"T. Kawase, N. Hosaka, K. Hashio, M. Matsushima, T. Sakurada, R. Nakai","doi":"10.1109/GAAS.2002.1049048","DOIUrl":"https://doi.org/10.1109/GAAS.2002.1049048","url":null,"abstract":"Macroscopic and microscopic uniformity in 4-inch InP substrates has been significantly improved by new developments in SEI's Vertical Boat (VB) technique. In this paper, we report improvements, in etch-pit density (EPD) distribution, micro-resistivity profiles, and photoluminescence (intensity and 4.2K spectra), for 4-inch InP VB in comparison to both VCZ (SEI proprietary Vapor pressure controlled Chockralski) and commercially available VGF substrates.","PeriodicalId":142875,"journal":{"name":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131791049","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Direct extraction of InGaP/GaAs HBT large signal model 直接提取InGaP/GaAs HBT大信号模型
24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu Pub Date : 2002-12-10 DOI: 10.1109/GAAS.2002.1049065
A. Raghavan, B. Banerjee, S. Venkataraman, J. Laskar
{"title":"Direct extraction of InGaP/GaAs HBT large signal model","authors":"A. Raghavan, B. Banerjee, S. Venkataraman, J. Laskar","doi":"10.1109/GAAS.2002.1049065","DOIUrl":"https://doi.org/10.1109/GAAS.2002.1049065","url":null,"abstract":"A direct extraction method for a compact InGaP/GaAs HBT CAD large signal model including self-heating effects is presented. The current source model including self-heating effect parameters is directly extracted from measured I-V data using a simple procedure. The distributed base resistance and distributed base-collector capacitance are directly extracted from measured S-parameters using a new technique. The extraction procedure for the model is simple, fast, accurate and inherently minimizes the average squared-error between measured and model data thereby requiring no further optimization after extraction.","PeriodicalId":142875,"journal":{"name":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","volume":"139 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114729645","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Integrated circuits for fiber systems 光纤系统集成电路
24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu Pub Date : 2002-12-10 DOI: 10.1109/GAAS.2002.1049020
J. Sitch
{"title":"Integrated circuits for fiber systems","authors":"J. Sitch","doi":"10.1109/GAAS.2002.1049020","DOIUrl":"https://doi.org/10.1109/GAAS.2002.1049020","url":null,"abstract":"In this tutorial paper we review the nature and requirements of optical fiber communications systems, and identify some trends in fiber systems that will have a bearing on the integrated circuits used to realize them. We concentrate on the optical interface layer, and only discuss up- and down-stream signal processing as it impacts the components of interest. The emphasis is on high capacity links, operating at line rates of above 2.5 Gb/s.","PeriodicalId":142875,"journal":{"name":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124546386","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A compact 30 GHz MMIC high power amplifier (3 W CW) in chip and packaged form 一个紧凑的30 GHz MMIC高功率放大器(3w连续波)在芯片和封装形式
24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu Pub Date : 2002-12-10 DOI: 10.1109/GAAS.2002.1049024
K.K.-S. Kong, D. Boone, M. King, B. Nguyen, M. Vernon, E. Reese, G. Brehm
{"title":"A compact 30 GHz MMIC high power amplifier (3 W CW) in chip and packaged form","authors":"K.K.-S. Kong, D. Boone, M. King, B. Nguyen, M. Vernon, E. Reese, G. Brehm","doi":"10.1109/GAAS.2002.1049024","DOIUrl":"https://doi.org/10.1109/GAAS.2002.1049024","url":null,"abstract":"This paper presents performance of a compact 3 W HPA (High Power Amplifier) in MMIC and packaged form at 30 GHz. A low cost high power packaged part was achieved by designing a compact MMIC and adopting a laminate substrate approach for a package. TriQuint standard 0.25 /spl mu/m PHEMT production process on 50 /spl mu/m substrate technology was used for a compact MMIC PA design. The output power at P1 dB (CW measurement) of MMIC and packaged parts are 34.9 dBm and 34.5 dBm with associated gain of 21.5 dB. These results are the highest CW-power and gain reported for a single MMIC and packaged part at Ka-band.","PeriodicalId":142875,"journal":{"name":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121277729","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
A four-stage Ku-band 1 watt PHEMT MMIC power amplifier 四级ku波段1瓦PHEMT MMIC功率放大器
24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu Pub Date : 2002-12-10 DOI: 10.1109/GAAS.2002.1049023
H.Z. Liu, C.C. Wang, Y. Wang, J. Huang, C. Chang, W. Wu, C. Wu, C. Chang
{"title":"A four-stage Ku-band 1 watt PHEMT MMIC power amplifier","authors":"H.Z. Liu, C.C. Wang, Y. Wang, J. Huang, C. Chang, W. Wu, C. Wu, C. Chang","doi":"10.1109/GAAS.2002.1049023","DOIUrl":"https://doi.org/10.1109/GAAS.2002.1049023","url":null,"abstract":"In this paper, a Ku-band 1 watt AlGaAs/InGaAs/GaAs PHEMT MMIC power amplifier for VSAT ODU (outdoor unit) applications is demonstrated. This four-stage amplifier is designed to fully match for a 50 ohm input and output impedance. With 7 V and 700 mA DC bias condition, the amplifier has achieved 30 dB small-signal gain, 30.8 dBm 1-dB gain compression power with 24.5% power-added efficiency (PAE) and 31.3 dBm saturation power with 27.5% PAE from 14 to 17 GHz.","PeriodicalId":142875,"journal":{"name":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129045304","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
1.7-W 50-Gbit/s InP HEMT 4:1 multiplexer IC with a multi-phase clock architecture 1.7-W 50gbit /s InP HEMT 4:1多路复用IC，采用多相时钟架构
24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu Pub Date : 2002-12-10 DOI: 10.1109/GAAS.2002.1049051
K. Sano, Koichi Murata, S. Sugitani, H. Sugahara, T. Enoki
{"title":"1.7-W 50-Gbit/s InP HEMT 4:1 multiplexer IC with a multi-phase clock architecture","authors":"K. Sano, Koichi Murata, S. Sugitani, H. Sugahara, T. Enoki","doi":"10.1109/GAAS.2002.1049051","DOIUrl":"https://doi.org/10.1109/GAAS.2002.1049051","url":null,"abstract":"Low-power and high-speed operation of a 4:1 multiplexer IC with a multi-phase clock architecture is reported. The architecture features a toggle-type flip-flop (TFF) that generates a four-phase clock, and a series-gated 4:1 selector (SEL). The fabricated IC using InP HEMTs operates at 50 Gbit/s error-free with 1.71-W power consumption and 1-Vpp output amplitude. The power consumption is less than 1/3 that of a conventional tree-type InP HEMT 4:1 multiplexer IC and is achieved without any reduction of operation speed and output amplitude.","PeriodicalId":142875,"journal":{"name":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130637386","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
An 8-Watt 3.5 GHz power amplifier with tunable matching 具有可调谐匹配的8瓦3.5 GHz功率放大器
24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu Pub Date : 2002-12-10 DOI: 10.1109/GAAS.2002.1049056
S. Rockwell, R. Emrick, B. Bosco, S. Franson, M. Miller, E. Johnson, J. Crowder
{"title":"An 8-Watt 3.5 GHz power amplifier with tunable matching","authors":"S. Rockwell, R. Emrick, B. Bosco, S. Franson, M. Miller, E. Johnson, J. Crowder","doi":"10.1109/GAAS.2002.1049056","DOIUrl":"https://doi.org/10.1109/GAAS.2002.1049056","url":null,"abstract":"A high power 3-stage, S-band power amplifier MMIC implemented with a partially matched output stage is presented. This MMIC PA achieves 39 dBm output power and greater than 25% power added efficiency using 0.6 /spl mu/m PHEMT technology. Small-signal performance matches very well with modeled predictions. The amplifier is exceptionally stable under varying loads, has a bandwidth of several 100 MHz and is easily matched and tuned about the 3.5 GHz band with a simple output matching technique using chip caps, bond wires and duroid transmission lines.","PeriodicalId":142875,"journal":{"name":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128004510","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Direct up-conversion MMIC with RF bandwidth of 4 to 12 GHz 直接上变频MMIC，射频带宽为4至12 GHz
24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu Pub Date : 2002-12-10 DOI: 10.1109/GAAS.2002.1049041
J. Komiak, W. Kong, K. Nichols
{"title":"Direct up-conversion MMIC with RF bandwidth of 4 to 12 GHz","authors":"J. Komiak, W. Kong, K. Nichols","doi":"10.1109/GAAS.2002.1049041","DOIUrl":"https://doi.org/10.1109/GAAS.2002.1049041","url":null,"abstract":"The design and performance of a novel direct up-conversion MMIC is described. The circuit accepts analog differential or single-ended signals from a DAC, forms a sampling pulse from the DAC clock, and creates a time domain waveform that is a pulse doublet train amplitude modulated by the DAC input. The appropriate spectral line is then obtained via bandpass filtering. This approach minimizes cost, volume, power, and weight by eliminating the requirement for a local oscillator. The MMIC is implemented in a fully selective 0.15 /spl mu/m double recess PHEMT process.","PeriodicalId":142875,"journal":{"name":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126979518","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 3-V fully differential distributed limiting driver for 40 Gb/s optical transmission systems 用于40gb /s光传输系统的3v全差分分布式限制驱动器
24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu Pub Date : 2002-12-10 DOI: 10.1109/GAAS.2002.1049037
D. McPherson, F. Pera, A. Tazlauanu, S. Voinigescu
{"title":"A 3-V fully differential distributed limiting driver for 40 Gb/s optical transmission systems","authors":"D. McPherson, F. Pera, A. Tazlauanu, S. Voinigescu","doi":"10.1109/GAAS.2002.1049037","DOIUrl":"https://doi.org/10.1109/GAAS.2002.1049037","url":null,"abstract":"A fully differential 40 Gb/s electroabsorption modulator driver is presented. Based on a distributed limiting architecture, the circuit can supply up to 3.0 V peak-to-peak per side in a 50 /spl Omega/ load at data rates as high as 44 Gb/s. Both the input and output are internally matched to 50 /spl Omega/ and exhibit return loss of better than 10 dB up to 50 GHz. Additional features of the driver include the use of a single -5.2 V supply, output swing control (1.7 to 3.0 V/sub pp/ per side), DC output offset control (-0.15 V to -1.1 V) and pulse width control (30% to 70%).","PeriodicalId":142875,"journal":{"name":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121867760","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
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