垂直船形生长法改善集成电路用4英寸InP衬底微观和宏观均匀性

24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu Pub Date : 2002-12-10 DOI:10.1109/GAAS.2002.1049048

T. Kawase, N. Hosaka, K. Hashio, M. Matsushima, T. Sakurada, R. Nakai

{"title":"垂直船形生长法改善集成电路用4英寸InP衬底微观和宏观均匀性","authors":"T. Kawase, N. Hosaka, K. Hashio, M. Matsushima, T. Sakurada, R. Nakai","doi":"10.1109/GAAS.2002.1049048","DOIUrl":null,"url":null,"abstract":"Macroscopic and microscopic uniformity in 4-inch InP substrates has been significantly improved by new developments in SEI's Vertical Boat (VB) technique. In this paper, we report improvements, in etch-pit density (EPD) distribution, micro-resistivity profiles, and photoluminescence (intensity and 4.2K spectra), for 4-inch InP VB in comparison to both VCZ (SEI proprietary Vapor pressure controlled Chockralski) and commercially available VGF substrates.","PeriodicalId":142875,"journal":{"name":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Improvement of microscopic and macroscopic uniformity in 4-inch InP substrate for IC application by vertical boat growth\",\"authors\":\"T. Kawase, N. Hosaka, K. Hashio, M. Matsushima, T. Sakurada, R. Nakai\",\"doi\":\"10.1109/GAAS.2002.1049048\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Macroscopic and microscopic uniformity in 4-inch InP substrates has been significantly improved by new developments in SEI's Vertical Boat (VB) technique. In this paper, we report improvements, in etch-pit density (EPD) distribution, micro-resistivity profiles, and photoluminescence (intensity and 4.2K spectra), for 4-inch InP VB in comparison to both VCZ (SEI proprietary Vapor pressure controlled Chockralski) and commercially available VGF substrates.\",\"PeriodicalId\":142875,\"journal\":{\"name\":\"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.2002.1049048\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.2002.1049048","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

通过SEI的垂直船(VB)技术的新发展，4英寸InP衬底的宏观和微观均匀性得到了显著改善。在本文中，我们报告了与VCZ (SEI专有蒸汽压控制Chockralski)和市售VGF基板相比，4英寸InP VB在蚀刻坑密度(EPD)分布、微电阻率曲线和光致发光(强度和4.2K光谱)方面的改进。

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Improvement of microscopic and macroscopic uniformity in 4-inch InP substrate for IC application by vertical boat growth

Macroscopic and microscopic uniformity in 4-inch InP substrates has been significantly improved by new developments in SEI's Vertical Boat (VB) technique. In this paper, we report improvements, in etch-pit density (EPD) distribution, micro-resistivity profiles, and photoluminescence (intensity and 4.2K spectra), for 4-inch InP VB in comparison to both VCZ (SEI proprietary Vapor pressure controlled Chockralski) and commercially available VGF substrates.

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24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu

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