T. Kawase, N. Hosaka, K. Hashio, M. Matsushima, T. Sakurada, R. Nakai
{"title":"Improvement of microscopic and macroscopic uniformity in 4-inch InP substrate for IC application by vertical boat growth","authors":"T. Kawase, N. Hosaka, K. Hashio, M. Matsushima, T. Sakurada, R. Nakai","doi":"10.1109/GAAS.2002.1049048","DOIUrl":null,"url":null,"abstract":"Macroscopic and microscopic uniformity in 4-inch InP substrates has been significantly improved by new developments in SEI's Vertical Boat (VB) technique. In this paper, we report improvements, in etch-pit density (EPD) distribution, micro-resistivity profiles, and photoluminescence (intensity and 4.2K spectra), for 4-inch InP VB in comparison to both VCZ (SEI proprietary Vapor pressure controlled Chockralski) and commercially available VGF substrates.","PeriodicalId":142875,"journal":{"name":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.2002.1049048","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Macroscopic and microscopic uniformity in 4-inch InP substrates has been significantly improved by new developments in SEI's Vertical Boat (VB) technique. In this paper, we report improvements, in etch-pit density (EPD) distribution, micro-resistivity profiles, and photoluminescence (intensity and 4.2K spectra), for 4-inch InP VB in comparison to both VCZ (SEI proprietary Vapor pressure controlled Chockralski) and commercially available VGF substrates.