Direct extraction of InGaP/GaAs HBT large signal model

Abstract

A direct extraction method for a compact InGaP/GaAs HBT CAD large signal model including self-heating effects is presented. The current source model including self-heating effect parameters is directly extracted from measured I-V data using a simple procedure. The distributed base resistance and distributed base-collector capacitance are directly extracted from measured S-parameters using a new technique. The extraction procedure for the model is simple, fast, accurate and inherently minimizes the average squared-error between measured and model data thereby requiring no further optimization after extraction.