一个紧凑的30 GHz MMIC高功率放大器(3w连续波)在芯片和封装形式

24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu Pub Date : 2002-12-10 DOI:10.1109/GAAS.2002.1049024

K.K.-S. Kong, D. Boone, M. King, B. Nguyen, M. Vernon, E. Reese, G. Brehm

{"title":"一个紧凑的30 GHz MMIC高功率放大器(3w连续波)在芯片和封装形式","authors":"K.K.-S. Kong, D. Boone, M. King, B. Nguyen, M. Vernon, E. Reese, G. Brehm","doi":"10.1109/GAAS.2002.1049024","DOIUrl":null,"url":null,"abstract":"This paper presents performance of a compact 3 W HPA (High Power Amplifier) in MMIC and packaged form at 30 GHz. A low cost high power packaged part was achieved by designing a compact MMIC and adopting a laminate substrate approach for a package. TriQuint standard 0.25 /spl mu/m PHEMT production process on 50 /spl mu/m substrate technology was used for a compact MMIC PA design. The output power at P1 dB (CW measurement) of MMIC and packaged parts are 34.9 dBm and 34.5 dBm with associated gain of 21.5 dB. These results are the highest CW-power and gain reported for a single MMIC and packaged part at Ka-band.","PeriodicalId":142875,"journal":{"name":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","volume":"72 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":"{\"title\":\"A compact 30 GHz MMIC high power amplifier (3 W CW) in chip and packaged form\",\"authors\":\"K.K.-S. Kong, D. Boone, M. King, B. Nguyen, M. Vernon, E. Reese, G. Brehm\",\"doi\":\"10.1109/GAAS.2002.1049024\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents performance of a compact 3 W HPA (High Power Amplifier) in MMIC and packaged form at 30 GHz. A low cost high power packaged part was achieved by designing a compact MMIC and adopting a laminate substrate approach for a package. TriQuint standard 0.25 /spl mu/m PHEMT production process on 50 /spl mu/m substrate technology was used for a compact MMIC PA design. The output power at P1 dB (CW measurement) of MMIC and packaged parts are 34.9 dBm and 34.5 dBm with associated gain of 21.5 dB. These results are the highest CW-power and gain reported for a single MMIC and packaged part at Ka-band.\",\"PeriodicalId\":142875,\"journal\":{\"name\":\"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu\",\"volume\":\"72 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"13\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.2002.1049024\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.2002.1049024","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 13

摘要

本文介绍了一种采用MMIC封装形式的30ghz紧凑型3w高功率放大器的性能。通过设计紧凑的MMIC和采用层压板封装方法，实现了低成本、高功率的封装部件。TriQuint标准0.25 /spl mu/m PHEMT生产工艺在50 /spl mu/m衬底技术上用于紧凑型MMIC PA设计。MMIC和封装部件P1 dB(连续波测量)输出功率分别为34.9 dBm和34.5 dBm，相关增益为21.5 dB。这些结果是在ka波段报道的单个MMIC和封装部件的最高cw功率和增益。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A compact 30 GHz MMIC high power amplifier (3 W CW) in chip and packaged form

This paper presents performance of a compact 3 W HPA (High Power Amplifier) in MMIC and packaged form at 30 GHz. A low cost high power packaged part was achieved by designing a compact MMIC and adopting a laminate substrate approach for a package. TriQuint standard 0.25 /spl mu/m PHEMT production process on 50 /spl mu/m substrate technology was used for a compact MMIC PA design. The output power at P1 dB (CW measurement) of MMIC and packaged parts are 34.9 dBm and 34.5 dBm with associated gain of 21.5 dB. These results are the highest CW-power and gain reported for a single MMIC and packaged part at Ka-band.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu

自引率

0.00%

发文量