{"title":"具有可调通阻的InP HBT共基放大器,适用于40gb /s的应用","authors":"K. Kobayashi","doi":"10.1109/GAAS.2002.1049050","DOIUrl":null,"url":null,"abstract":"This work features a 40 Gb/s common-base transimpedance amplifier (TIA) design that employs electronically tunable transimpedance to compensate for various combinations of photodetector and hybrid interconnect parasitics. A tuning transimpedance BW range of 10 GHz is demonstrated using this approach. Integrated with a 40 fF photodetector, the transimpedance amplifier achieves 62.3 dB-ohm (1.3 kohm) differential transimpedance with a bandwidth of 39.3 GHz while consuming only 165 mW. This corresponds to a transimpedance-BW product per DC power of 310 ohms-GHz/mW. To the author's knowledge, this work is the first published demonstration of a tunable transimpedance amplifier for 40 Gb/s applications, and is among the highest TZ-BWP per DC power reported for a 40 Gb/s TIA.","PeriodicalId":142875,"journal":{"name":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"An InP HBT common-base amplifier with tunable transimpedance for 40 Gb/s applications\",\"authors\":\"K. Kobayashi\",\"doi\":\"10.1109/GAAS.2002.1049050\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work features a 40 Gb/s common-base transimpedance amplifier (TIA) design that employs electronically tunable transimpedance to compensate for various combinations of photodetector and hybrid interconnect parasitics. A tuning transimpedance BW range of 10 GHz is demonstrated using this approach. Integrated with a 40 fF photodetector, the transimpedance amplifier achieves 62.3 dB-ohm (1.3 kohm) differential transimpedance with a bandwidth of 39.3 GHz while consuming only 165 mW. This corresponds to a transimpedance-BW product per DC power of 310 ohms-GHz/mW. To the author's knowledge, this work is the first published demonstration of a tunable transimpedance amplifier for 40 Gb/s applications, and is among the highest TZ-BWP per DC power reported for a 40 Gb/s TIA.\",\"PeriodicalId\":142875,\"journal\":{\"name\":\"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.2002.1049050\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.2002.1049050","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An InP HBT common-base amplifier with tunable transimpedance for 40 Gb/s applications
This work features a 40 Gb/s common-base transimpedance amplifier (TIA) design that employs electronically tunable transimpedance to compensate for various combinations of photodetector and hybrid interconnect parasitics. A tuning transimpedance BW range of 10 GHz is demonstrated using this approach. Integrated with a 40 fF photodetector, the transimpedance amplifier achieves 62.3 dB-ohm (1.3 kohm) differential transimpedance with a bandwidth of 39.3 GHz while consuming only 165 mW. This corresponds to a transimpedance-BW product per DC power of 310 ohms-GHz/mW. To the author's knowledge, this work is the first published demonstration of a tunable transimpedance amplifier for 40 Gb/s applications, and is among the highest TZ-BWP per DC power reported for a 40 Gb/s TIA.