用于40gb /s光传输系统的3v全差分分布式限制驱动器

24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu Pub Date : 2002-12-10 DOI:10.1109/GAAS.2002.1049037

D. McPherson, F. Pera, A. Tazlauanu, S. Voinigescu

{"title":"用于40gb /s光传输系统的3v全差分分布式限制驱动器","authors":"D. McPherson, F. Pera, A. Tazlauanu, S. Voinigescu","doi":"10.1109/GAAS.2002.1049037","DOIUrl":null,"url":null,"abstract":"A fully differential 40 Gb/s electroabsorption modulator driver is presented. Based on a distributed limiting architecture, the circuit can supply up to 3.0 V peak-to-peak per side in a 50 /spl Omega/ load at data rates as high as 44 Gb/s. Both the input and output are internally matched to 50 /spl Omega/ and exhibit return loss of better than 10 dB up to 50 GHz. Additional features of the driver include the use of a single -5.2 V supply, output swing control (1.7 to 3.0 V/sub pp/ per side), DC output offset control (-0.15 V to -1.1 V) and pulse width control (30% to 70%).","PeriodicalId":142875,"journal":{"name":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","volume":"67 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":"{\"title\":\"A 3-V fully differential distributed limiting driver for 40 Gb/s optical transmission systems\",\"authors\":\"D. McPherson, F. Pera, A. Tazlauanu, S. Voinigescu\",\"doi\":\"10.1109/GAAS.2002.1049037\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A fully differential 40 Gb/s electroabsorption modulator driver is presented. Based on a distributed limiting architecture, the circuit can supply up to 3.0 V peak-to-peak per side in a 50 /spl Omega/ load at data rates as high as 44 Gb/s. Both the input and output are internally matched to 50 /spl Omega/ and exhibit return loss of better than 10 dB up to 50 GHz. Additional features of the driver include the use of a single -5.2 V supply, output swing control (1.7 to 3.0 V/sub pp/ per side), DC output offset control (-0.15 V to -1.1 V) and pulse width control (30% to 70%).\",\"PeriodicalId\":142875,\"journal\":{\"name\":\"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu\",\"volume\":\"67 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"13\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.2002.1049037\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.2002.1049037","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 13

摘要

提出了一种全差分40gb /s电吸收调制器驱动器。基于分布式限制架构，该电路可以在50 /spl ω /负载下以高达44 Gb/s的数据速率提供每侧高达3.0 V的峰对峰供电。输入和输出都是内部匹配到50 /spl ω /，并且在50 GHz时显示出优于10 dB的回波损耗。驱动器的其他功能包括使用单个-5.2 V电源，输出摆幅控制(1.7至3.0 V/sub pp/每侧)，直流输出偏置控制(-0.15 V至-1.1 V)和脉冲宽度控制(30%至70%)。

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A 3-V fully differential distributed limiting driver for 40 Gb/s optical transmission systems

A fully differential 40 Gb/s electroabsorption modulator driver is presented. Based on a distributed limiting architecture, the circuit can supply up to 3.0 V peak-to-peak per side in a 50 /spl Omega/ load at data rates as high as 44 Gb/s. Both the input and output are internally matched to 50 /spl Omega/ and exhibit return loss of better than 10 dB up to 50 GHz. Additional features of the driver include the use of a single -5.2 V supply, output swing control (1.7 to 3.0 V/sub pp/ per side), DC output offset control (-0.15 V to -1.1 V) and pulse width control (30% to 70%).

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来源期刊

24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu

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