0.1 /spl mu/m InGaAs/InAlAs/InP HEMT mmic -飞行合格技术

24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu Pub Date : 2002-12-10 DOI:10.1109/GAAS.2002.1049033

Y. Chou, D. Leung, R. Lai, R. Grundbacher, M. Barsky, Q. Kan, R. Tsai, D. Eng, M. Wojtowicz, T. Block, P. Liu, S. Olson, A. Oki, D. Streit

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引用次数: 19

摘要

3英寸InP基板上的0.1 /spl μ m InGaAs/InAlAs/InP HEMT MMIC技术已通过三温寿命测试、伽马辐射、射频生存能力、静电放电、过孔烘烤、H/sub /中毒等类别的认证。三温度寿命测试(T/sub 1/ = 215/spl度/C, T/sub 2/ = 230/spl度/C和T/sub 3/ = 250/spl度/C)为0.1 /spl mu/m InGaAs/InAlAs/InP HEMT mmic在N/sub 2/环境下的活化能(Ea)高达1.9 eV，在125/spl度/C结温下实现了预计的中失效时间(MTF) /spl ap/ 1/spl times/10/sup 8/小时。高达5兆RAD剂量的伽马辐射不会引起DC/RF特性的任何退化。静电放电(ESD)的破坏性电压可达100伏。此外，0.1 /spl mu/m的InP HEMTs对H/sub 2/的敏感性低于0.1 /spl mu/m的GaAs假晶HEMTs。验证结果表明，0.1 /spl mu/m InGaAs/InAlAs/InP mmic技术已准备好用于飞行应用。

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0.1 /spl mu/m InGaAs/InAlAs/InP HEMT MMICs - a flight qualified technology

0.1 /spl mu/m InGaAs/InAlAs/InP HEMT MMIC technology on 3- inch InP substrates has been qualified in the categories of three-temperature lifetest, gamma radiation, RF survivability, electrostatic discharge, via-hole baking, and H/sub 2/ poisoning. The three-temperature lifetest (T/sub 1/ = 215/spl deg/C, T/sub 2/ = 230/spl deg/C and T/sub 3/ = 250/spl deg/C) of 0.1 /spl mu/m InGaAs/InAlAs/InP HEMT MMICs in a N/sub 2/ ambient demonstrates an activation energy (Ea) as high as 1.9 eV, achieving a projected median-time-to-failure (MTF) /spl ap/ 1/spl times/10/sup 8/ hours at a 125/spl deg/C junction temperature. Gamma radiation up to 5 mega RAD dose does not induce any degradation of DC/RF characteristics. Electrostatic discharge (ESD) shows destructive voltage up to 100 Volts. Furthermore, 0.1 /spl mu/m InP HEMTs exhibit less sensitivity to H/sub 2/ exposure than 0.1 /spl mu/m GaAs pseudomorphic HEMTs. The qualification results demonstrate the readiness of 0.1 /spl mu/m InGaAs/InAlAs/InP MMICs technology for flight applications.

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24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu

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