InGaP/InGaAsN/GaAs N-p-N双异质结双极晶体管提高CDMA性能

24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu Pub Date : 2002-12-10 DOI:10.1109/GAAS.2002.1049076

R. Yarborough, B. Landini, R. Welser, J. Yang, T. Henderson

{"title":"InGaP/InGaAsN/GaAs N-p-N双异质结双极晶体管提高CDMA性能","authors":"R. Yarborough, B. Landini, R. Welser, J. Yang, T. Henderson","doi":"10.1109/GAAS.2002.1049076","DOIUrl":null,"url":null,"abstract":"We have demonstrated the DC characteristics and CDMA performance of an NpN InGaP/InGaAsN/GaAs double heterojunction bipolar transistor (DHBT) and compared the results to conventional InGaP/GaAs HBTs. A 100 mV reduction in base-emitter turn-on voltage and 35 mV reduction in offset voltage is established relative to InGaP/GaAs HBTs using a low energy-gap InGaAsN alloy base material and optimized heterointerfaces. InGaP/InGaAsN DHBT structures with high p-type doping levels (/spl sim/3/spl times/10/sup 19/ cm/sup -3/) have demonstrated DC current gains of /spl beta/=70 at 350 /spl Omega///spl square/ base sheet resistance. The DC current gain of InGaP/InGaAsN DHBTs has been improved by 46 % by grading the base layer composition. InGaAsN DHBTs have demonstrated 1.9 GHz CDMA IS-95 performance of 21 dBm output power (0.31 mW//spl mu/m/sup 2/ - 933 mW/mm), with 18.5 dB associated gain and greater than 53 % power-added efficiency at 45 dBc ACPR and 3 V operation. This represents an 83 mW/mm increase in output power and 3.8 percentage points improvement in PAE performance relative to InGaP/GaAs HBTs.","PeriodicalId":142875,"journal":{"name":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","volume":"85 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Enhanced CDMA performance from an InGaP/InGaAsN/GaAs N-p-N double heterojunction bipolar transistor\",\"authors\":\"R. Yarborough, B. Landini, R. Welser, J. Yang, T. Henderson\",\"doi\":\"10.1109/GAAS.2002.1049076\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have demonstrated the DC characteristics and CDMA performance of an NpN InGaP/InGaAsN/GaAs double heterojunction bipolar transistor (DHBT) and compared the results to conventional InGaP/GaAs HBTs. A 100 mV reduction in base-emitter turn-on voltage and 35 mV reduction in offset voltage is established relative to InGaP/GaAs HBTs using a low energy-gap InGaAsN alloy base material and optimized heterointerfaces. InGaP/InGaAsN DHBT structures with high p-type doping levels (/spl sim/3/spl times/10/sup 19/ cm/sup -3/) have demonstrated DC current gains of /spl beta/=70 at 350 /spl Omega///spl square/ base sheet resistance. The DC current gain of InGaP/InGaAsN DHBTs has been improved by 46 % by grading the base layer composition. InGaAsN DHBTs have demonstrated 1.9 GHz CDMA IS-95 performance of 21 dBm output power (0.31 mW//spl mu/m/sup 2/ - 933 mW/mm), with 18.5 dB associated gain and greater than 53 % power-added efficiency at 45 dBc ACPR and 3 V operation. This represents an 83 mW/mm increase in output power and 3.8 percentage points improvement in PAE performance relative to InGaP/GaAs HBTs.\",\"PeriodicalId\":142875,\"journal\":{\"name\":\"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu\",\"volume\":\"85 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.2002.1049076\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.2002.1049076","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

我们展示了NpN InGaP/InGaAsN/GaAs双异质结双极晶体管(DHBT)的直流特性和CDMA性能，并将结果与传统的InGaP/GaAs HBTs进行了比较。使用低能隙InGaAsN合金基材和优化的异质界面，相对于InGaP/GaAs HBTs，基极-发射极导通电压降低了100 mV，偏置电压降低了35 mV。具有高p型掺杂水平(/spl sim/3/spl times/10/sup 19/ cm/sup -3/)的InGaP/InGaAsN DHBT结构在350 /spl Omega/// /spl square/基片电阻下显示出/spl beta/=70的直流电流增益。通过对基层组成进行分级，InGaP/InGaAsN dhbt的直流电流增益提高了46%。InGaAsN dhbt已经展示了1.9 GHz CDMA IS-95的性能，输出功率为21 dBm (0.31 mW//spl mu/m/sup 2/ - 933 mW/mm)，相关增益为18.5 dB，在45 dBc ACPR和3 V工作时的功率增加效率大于53%。与InGaP/GaAs hbt相比，输出功率增加了83 mW/mm, PAE性能提高了3.8个百分点。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Enhanced CDMA performance from an InGaP/InGaAsN/GaAs N-p-N double heterojunction bipolar transistor

We have demonstrated the DC characteristics and CDMA performance of an NpN InGaP/InGaAsN/GaAs double heterojunction bipolar transistor (DHBT) and compared the results to conventional InGaP/GaAs HBTs. A 100 mV reduction in base-emitter turn-on voltage and 35 mV reduction in offset voltage is established relative to InGaP/GaAs HBTs using a low energy-gap InGaAsN alloy base material and optimized heterointerfaces. InGaP/InGaAsN DHBT structures with high p-type doping levels (/spl sim/3/spl times/10/sup 19/ cm/sup -3/) have demonstrated DC current gains of /spl beta/=70 at 350 /spl Omega///spl square/ base sheet resistance. The DC current gain of InGaP/InGaAsN DHBTs has been improved by 46 % by grading the base layer composition. InGaAsN DHBTs have demonstrated 1.9 GHz CDMA IS-95 performance of 21 dBm output power (0.31 mW//spl mu/m/sup 2/ - 933 mW/mm), with 18.5 dB associated gain and greater than 53 % power-added efficiency at 45 dBc ACPR and 3 V operation. This represents an 83 mW/mm increase in output power and 3.8 percentage points improvement in PAE performance relative to InGaP/GaAs HBTs.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu

自引率

0.00%

发文量