用密度梯度模型模拟HEMT中的量子输运

24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu Pub Date : 2002-12-10 DOI:10.1109/GAAS.2002.1049067

E. Lyumkis, R. Mickevicius, O. Penzin, B. Polsky, K. El Sayed, A. Wettstein, W. Fichtner

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引用次数: 3

摘要

本文提出了基于密度梯度模型的AlGaAs/InGaAs HEMT器件的量子输运模拟。结果表明，尺寸量化效应对电学特性有显著影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Simulations of quantum transport in HEMT using density gradient model

In this paper, quantum transport simulations for AlGaAs/InGaAs HEMT devices based on the density gradient model are presented. It is shows that size quantization effects have a pronounced influence on the electrical characteristics.

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24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu

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