J. Weiner, A. Leven, V. Houtsma, Y. Baeyens, Y. Chen, P. Paschke
{"title":"50 GHz带宽SiGe差分跨阻放大器","authors":"J. Weiner, A. Leven, V. Houtsma, Y. Baeyens, Y. Chen, P. Paschke","doi":"10.1109/gaas.2002.1049031","DOIUrl":null,"url":null,"abstract":"In this paper, we demonstrate a fully differential transimpedance amplifier (TIA) with 49 dB-ohm transimpedance, greater than 50 GHz bandwidth, and input-referred current noise less than 30pA//spl radic/(Hz).","PeriodicalId":142875,"journal":{"name":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","volume":"82 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"52","resultStr":"{\"title\":\"SiGe differential transimpedance amplifier with 50 GHz bandwidth\",\"authors\":\"J. Weiner, A. Leven, V. Houtsma, Y. Baeyens, Y. Chen, P. Paschke\",\"doi\":\"10.1109/gaas.2002.1049031\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we demonstrate a fully differential transimpedance amplifier (TIA) with 49 dB-ohm transimpedance, greater than 50 GHz bandwidth, and input-referred current noise less than 30pA//spl radic/(Hz).\",\"PeriodicalId\":142875,\"journal\":{\"name\":\"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu\",\"volume\":\"82 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"52\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/gaas.2002.1049031\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"24th Annual Technical Digest Gallium Arsenide Integrated Circuit (GaAs IC) Symposiu","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/gaas.2002.1049031","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
SiGe differential transimpedance amplifier with 50 GHz bandwidth
In this paper, we demonstrate a fully differential transimpedance amplifier (TIA) with 49 dB-ohm transimpedance, greater than 50 GHz bandwidth, and input-referred current noise less than 30pA//spl radic/(Hz).